Investigation of CF3I as an Environmentally Benign Dielectric Etchant

1998 ◽  
Vol 13 (9) ◽  
pp. 2643-2648 ◽  
Author(s):  
R. A. Levy ◽  
V. B. Zaitsev ◽  
K. Aryusook ◽  
C. Ravindranath ◽  
V. Sigal ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Processing Parameters ◽  
Reaction Chamber ◽  
Utilization Efficiency ◽  
Environmentally Benign ◽  
Dielectric Films ◽  
Chamber Pressure ◽  
Rf Power ◽  
Exhaust Stream

In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFC's currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure, and CF3I: O2 ratio. Destruction efficiencies of CF3I at different processing parameters were evaluated. Depending on the flow rate, rf power, and chamber pressure, utilization efficiency of CF3I varied from as low as 10% to as high as 68%. CF4, C2F6, COF2, and CO2 were the predominant by-products found in the exhaust stream; however, their concentrations were very low compared to the traditional process employing C2F6/O2 mixtures.

Very Wide-Gap and Device-Quality a-Si:H from Highly H2 Diluted SiH4 Plasma Decomposed by High RF Power

1999 ◽  
Vol 557 ◽  
Author(s):  
N. Terada ◽  
S. Yata ◽  
A. Terakawa ◽  
S. Okamoto ◽  
K. Wakisaka ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
High Deposition Rate ◽  
Rf Power ◽  
Gas Flow Rate ◽  
Dilution Ratio ◽  
Dilution Technique ◽  
Film Properties ◽  
Wide Gap ◽  
Hydrogenated Amorphous

AbstractThe H2 dilution technique at a high deposition rate (RD) was investigated by depositing hydrogenated amorphous silicon (a-Si:H) under a high if power density of 750 mW/cm2, which is 20 times as large as that of conventional conditions. It was found that the H2 dilution ratio γ ( = [H2 gas flow rate] / [SiH4 gas flow rate]) tendency of the film properties, such as the H content (CH), optical gap (Eopt), SiH2/SiH and photoconductivity (σph) of a-Si:H is different for the high rf power (750 mW/cm2) and the medium rf power (75 mW/cm2) conditions. Under medium rf power, the CH, Eopt and SiH2/SiH decrease as γ increases. Under the high if power, on the contrary, the CH and Eopt, monotonously increase while maintaining a low SiH2/SiH and a high σph of 10-6 S/cm as γ increases. These results suggest that increasing the rf power enhances the H incorporation reactions due to H2 dilution. It is thought that a high rf power causes the depletion of SiH4 and hence the extinction of H radicals, expressed by SiH4 + H* → SiH3* + H2, is suppressed. A high H radical density enhances the incorporation of H into a-Si:H, resulting in very wide-gap a-Si:H with a high CH, Consequently, very wide-gap a-Si:H with device-quality (Eopt of 1.82 eV with an (αhv)1/3 plot, corresponding to > 2.1 eV with Tauc's plot, and σph of 10-6 S/cm) can be obtained at a high RD of 12 Å/s without carbon alloying.

Optical Characterization of Amorphous SiNx:H Films Prepared by Plasma-Enhanced CVD

1992 ◽  
Vol 281 ◽  
Author(s):  
Rung-Ywan Tsai ◽  
L. C. Kuo ◽  
F. C. Ho
Keyword(s):  
Optical Properties ◽  
Flow Rate ◽  
Gas Flow ◽  
Electrode Spacing ◽  
Refractive Indices ◽  
Rf Power ◽  
Gas Flow Rate ◽  
Obvious Effect ◽  
Deposition Rates ◽  
Plasma Enhanced Cvd

ABSTRACTAmorphous SiNx:H thin films were prepared by plasma-enhanced CVD process. The effects of preparation conditions on the optical properties, compositions, and deposition rates of a-SiNx:H films were systematically studied by means of spectrophotometer, ellipsometer, and infrared spectroscopy measurements. It has been found that the refractive indices decrease with increasing the NH3 gas flow rate and the rf power, and increase with increasing the electrode spacing. Conversely, the deposition rates increase with increasing the NH3 gas flow rate and the rf power, and decrease with increasing the electrode spacing. There was no obvious effect of substrate temperatures ranging from 250 to 320°C on the optical properties and deposition rates of a-SiNx :H films. The decrease of the refractive index and the increase of the deposition rate were due to the increase of the nitrogen composition x occurring in the a-SiNx:H films. Refractive indices n and extinction coefficients k of a-SiNx:H films can be varied from n = 3.6 and k = 0.1 for x = 0 (pure a-Si:H) to n = 1.8 and k = 0 for x = 1.33 (pure a-Si3 N4:H) at the wavelength of 633 nm.

A Synergistic Approach to Environmental Concerns in Large Scale MOCVD Processes

1994 ◽  
Vol 344 ◽  
Author(s):  
A. G. Thompson ◽  
G. S. Tompa ◽  
P. A. Zawadzki ◽  
M. Mckee ◽  
C. Beckham ◽  
...  
Keyword(s):  
Large Scale ◽  
Reaction Chamber ◽  
Utilization Efficiency ◽  
Operational Experience ◽  
Wafer Level ◽  
Semiconducting Materials ◽  
Production Scale ◽  
Synergistic Approach ◽  
Exhaust Stream ◽  
Operator Safety

AbstractProcesses used in the production of epitaxial III-V semiconducting materials employ a wide variety of materials that are environmentally hazardous. As production volumes increase, the need to manage these materials becomes a serious concern. As the leading supplier of production scale single and multi-wafer MOCVD systems, we have taken the approach of minimizing the generation of waste by designing our reactor for high reactant utilization efficiency, and then trapping the remainder so that the exhaust stream is clean. We have paid particular attention to both operational efficiency and operator safety. The traps may be simply removed and replaced, with cleaning being performed off line. The trapped materials are reduced to an inert state for subsequent commercial disposal; this is particularly important for phosphorus, which can be highly flammable if improperly handled. The reactor chamber deposits occur below the wafer level and typically are cleaned only after several hundred deposition cycles. These factors contribute to a quick cycle time and high uptime, both of which increase throughput. These issues become more important as the reactor size is increased and when multiple shifts are utilized. These points are exemplified by our operational experience with our new Enterprise series, which holds four 100mm wafers (or seventeen 50mm wafers) per run. We will discuss the progressive trapping of solid As and P compounds and those hydride gases which are not completely decomposed in the reaction chamber. The use of computer modeling to scale the process to larger dimensions and to optimize the deposition conditions will also be discussed.

Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition

2010 ◽  
Vol 25 (9) ◽  
pp. 1778-1783 ◽  
Author(s):  
Seok-Hyo Yun ◽  
Suthan Kissinger ◽  
Don Wook Kim ◽  
Jun-Ho Cha ◽  
Yong-Ho Ra ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Gas Flow Rate ◽  
Metalorganic Chemical

We demonstrated the growth of indium nitride (InN) nanowires on Si(111) substrates by metalorganic chemical vapor deposition without the use of any intermediate GaN or AlN buffer layer. The InN nanowires were grown by forming the Au + In droplets and In droplets on the Au- and In-coated Si substrate. The growth conditions such as chamber pressure, chamber temperature, reaction gas flow rate, and carrier gas flow rate were optimized to yield nanowires free from contamination. Depending on the growth parameters different growth regimes for the InN nanowires were identified. The strength of self-catalytic route has been highlighted. The morphology and microstructures of samples were characterized by x-ray diffraction and scanning electron microscopy (SEM). The transmission electron microscopy and SEM investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 400 nm, and lengths up to 3 µm. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 0.77 eV.

EFFECT OF THE PROCESSING PARAMETERS ON THE INTEGRITY OF CALCIUM PHOSPHATE COATINGS PRODUCED BY RF-MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (31) ◽  
pp. 5811-5818 ◽  
Author(s):  
JAY ARRE TOQUE ◽  
M. HAMDI ◽  
A. IDE-EKTESSABI ◽  
IIS SOPYAN
Keyword(s):  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Adhesion Strength ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Control Factors

Calcium phosphate (CaP) compounds like hydroxyapatite and tricalcium phosphates are considered to be very important biomaterials. This study used RF-magnetron sputtering (RF-MS) to deposit CaP onto 316L SS. Due to the complex nature of the effect of different sputtering parameters on the quality and integrity of the coatings, there is a need to further investigate those parameters collectively. An L 9(34) orthogonal array was employed to design the experiment that was used to investigate four important coating parameters which include RF-power, argon gas flow rate, deposition time and post-heat treatment conditions. The coating composition and structure were evaluated using XRD, EDX and FTIR. The mechanical property was measured in terms of the adhesion strength using a microscratch testing machine. The response graph of the results revealed that the interfacial strength of CaP was mainly influenced by the deposition power, while the coating thickness was predominantly affected by the argon gas flow rate. High adhesion strength was achieved when the coatings have at least 2 μ m thickness and deposited at a working pressure of 12 m Torr. ANOVA on the control factors helped rank the parameters accordingly in order of importance. Based on the response of the control factors, it was found that optimum adhesion strength could be achieved by depositing the coatings using the following parameters: 10 sccm of argon gas flow rate; 150 W of RF power; and 16 h of deposition.

Effects of Annealing Atmosphere on the Characteristics and Optical Properties of SiON Films Prepared Plasma Enhanced Chemical Vapor Deposition

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Jun Yun ◽  
Dong-Ryeol Jung ◽  
Sung-Kil Hong ◽  
Jong-Ha Moon ◽  
Jin-Hyeok Kim
Keyword(s):  
Optical Properties ◽  
Deposition Rate ◽  
Flow Rate ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Nitrogen Atmosphere ◽  
Annealing Atmosphere ◽  
Flow Ratio ◽  
Rf Power ◽  
Bonding Characteristics

AbstractSiON thin films were deposited by plasma-enhanced chemical vapor deposition method at 350 °C using N2O/SiH4 gas mixtures as precursors. As-deposited SiON films were annealed in different gas atmospheres (air, N2, and O2) and at different annealing temperatures (800 oC ∼ 1100 oC). Effects of annealing atmosphere on the Si-O, Si-N, Si-H, and N-H bonding characteristics in SiON films and their structural and optical properties have been investigated. Cross-sectional and planar microstructures were characterized by scanning electron microscopy and atomic force microscopy, and crystallinity was investigated by X-ray diffraction. Chemical bonding characteristics and optical properties SiON films were studied using fourier transform infrared spectroscopy and prism coupler. Xray diffractions showed no evidence of any crystals in all SiON films. The deposition rate strongly depended on the processing parameters such as radio frequency (rf) power, N2O/SiH4 flow ratio, and SiH4 flow rate. Deposition rate increased as N2O/SiH4 flow ratio increased and SiH4 flow rate increased. It was possible to obtain SiON films with surface roughness of about 1 nm and a high deposition rate of about 4 μm/h when the processing parameters were optimized as rf power of 200 W, N2O/SiH4 flow ratio of 3, SiH4 flow rate of 100 sccm. It was observed that the intensity and the shift of the Si-O stretch and Si-N peaks depended on the annealing atmosphere as well as the annealing temperature. The intensity of Si-O peaks increased in the samples annealed in oxygen atmosphere, but it decreased in the samples annealed in nitrogen atmosphere. The intensity of Si-N peak decreased in the samples annealed in oxygen atmosphere, but it increased in the samples annealed in nitrogen atmosphere. The position of Si-O peaks shifted from 1030 nm to 1140 nm in the samples annealed both in oxygen and in nitrogen atmosphere. It was also observed that the intensities of Si-H (∼2250 cm−1) and N-H (∼3550 cm−1) peaks decreased apparently as the annealing temperature increased in all annealed samples.

Effect of Processing Parameters on Plasma Jet and In-flight Particles Characters in Supersonic Plasma Spraying

2016 ◽  
Vol 35 (8) ◽  
pp. 775-786 ◽  
Author(s):  
Pei Wei ◽  
Zhengying Wei ◽  
Guangxi Zhao ◽  
Y. Bai ◽  
Chao Tan
Keyword(s):  
Plasma Spraying ◽  
Flow Rate ◽  
Gas Flow ◽  
Plasma Jet ◽  
Processing Parameters ◽  
Current Intensity ◽  
Maximum Temperature ◽  
Gas Flow Rate ◽  
Average Maximum ◽  
Supersonic Plasma

AbstractIn supersonic plasma spraying system (SAPS), heat transfer from arc plasma is characterized by several distinct features, such as transport of dissociation and ionization energy and of electrical charges in addition to mass transport. The thermodynamic and transport properties of plasma jet were influenced by several main parameters such as primary gas flow rate, the H2 vol.% and current intensity A. This paper first analyzes the effect of these parameters on the temperature and velocity of plasma jet theoretically. Further, the loading particles were melted and accelerated by plasma jet. Effects of several main parameters such as carrier gas flow rate, the H2 vol.%, the current intensity, the voltage and the spraying distance on temperature and velocity of in-flight particle were studied experimentally. The average maximum temperature and velocity of in-flight particle at any given parameters were systematically quantified. Optimal SAPS process parameters were given in this paper. In general, increasing the particles impacting velocity and surface temperature can improve the maximum spreading factor and decrease the coating porosity.

Chemical vapor deposition parameters dependent length control of hexagonal graphene

2016 ◽  
Vol 231 (6) ◽  
pp. 1187-1196
Author(s):  
Hatem Abuhimd
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Gas Flow Rate ◽  
Production Scale ◽  
Surface Graph ◽  
Deposition Parameters

This paper presents a process metamodel-based artificial neural network full factorial experimental design and analysis to study the yield of lengthy hexagonal graphene grown by chemical vapor deposition. All of the process variables of chemical vapor deposition such as temperature, pressure, and gas flow rate under the study played a role in influencing hexagonal graphene length; the current study investigated their main effects and interactions. The metamodel-based analysis demonstrates that the hydrocarbon flow rate and the pressure are the most statistically significant factors that influence the length of hexagonal graphene. In particular, minimum and maximum values of the chamber pressure are not significant in terms of the concentrating effect they may have on the flowing mixture of gases with very small flow rate, i.e. 50 sccm. At the highest flow rate of 400 sccm, the chamber pressure stepped up to 764 Torr, which can support the growth reaction to the extent that the resultant hexagonal graphene length of 900 µm can be achieved. However, the two level effect of the flow rate can optimize the length to 990 µm and ≈1390 µm at 700 Torr and 764 Torr, respectively. In addition, the response surface graph confirms the factors of significance and adds that higher flow with lower pressure will consistently yield tall hexagonal graphene. We found that gas flow rate is the most significant of the control variables and only the optimum value of the gas flow rate of 225 sccm can ensure the growth of tall hexagonal graphene. We also found that the interaction of flow rate with temperature of the gases in the chamber is extremely significant to the quality of output. Outcomes of this investigation are beneficial for moving close to producing hexagonal graphene on production scale for future applications.

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