Deformation-induced α2 ↔ γ phase transformation in a Ti–48Al–2Cr alloy

2000 ◽  
Vol 15 (10) ◽  
pp. 2145-2150 ◽  
Author(s):  
J. X. Zhang ◽  
H. Q. Ye
Keyword(s):  
Electron Microscopy ◽  
Phase Transformation ◽  
Lattice Misfit ◽  
Hrem Image ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Ledge Mechanism ◽  
Related Process ◽  
Image Simulations

The structure of γ–α2 interfaces in deformed Ti–48Al–2Cr alloy was analyzed by high-resolution transmission electron microscopy (HREM) and image simulations. Growth of γ–TiAl plate in α2–Ti3Al phase was found to be a result of a ledge mechanism consisting of Shockley partial dislocations on alternate (0001)α2 planes. The height of the ledges was always a multiple of two (0001)α2 planes. The γ → α2 phase transformation was also an interface-related process. Large ledges of six close packed planes (111)γ high were often observed at the γ–α2 interface. Every large ledge consisted of six Shockley partial dislocations that originated from the γ–a2 interfacial lattice misfit. The movement of these partial dislocations accomplished the transformation of γ → α2 phase. Comparing the experimental and simulated HREM image, it was found that atomic reordering appears during the deformation-induced γ↔α2 transformation.

Effect of Ta on the Structure and Dynamics of γ/α2 Interfaces in Tial

1990 ◽  
Vol 213 ◽  
Author(s):  
S. R. Singh ◽  
J. M. Howe
Keyword(s):  
Partial Dislocation ◽  
Growth Mechanisms ◽  
Tial Alloys ◽  
Shockley Partial ◽  
Structure And Dynamics ◽  
Partial Dislocations ◽  
Α2 Phase ◽  
Atomically Flat ◽  
Ledge Mechanism ◽  
Image Simulations

ABSTRACTThe structure of γ/α interfaces in binary and Ta-containing TiAl alloys were analyzed by HRTEM and image simulations. Growth of α2 was found to be due to a ledge mechanism, consisting of Shockley partial dislocations on alternate (111)γ planes. The interface is atomically flat between the ledges and addition of Ta was found to transform arrays of growth ledges in the binary alloy into islands on the plate faces in the Ta-containing alloy. These islands of α2 on the γ/α2 interfaces were 4–7nm wide and increased in size with decreasing ageing temperature. The height of the ledges and islands were always a multiple of the c-parameter (0.46nm) of the α2 phase. The islands were bounded by 90°(edge) and 30° screw) Shockley partial dislocations. The 30° partial dislocation cores were localized whereas the 90° partial dislocation cores appeared to be highly delocalized due to presence of a high density of kinks, which in one case was found to be about 0.65nm−1.These results are interpreted in terms of the growth mechanisms and morphology of the α2 phase.

Study of Microstructure in SrTiO3/Si by High-resolution Transmission Electron Microscopy

2002 ◽  
Vol 17 (1) ◽  
pp. 204-213 ◽  
Author(s):  
G. Y. Yang ◽  
J. M. Finder ◽  
J. Wang ◽  
Z. L. Wang ◽  
Z. Yu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Misfit ◽  
Structural Defects ◽  
Si Substrate ◽  
Substrate Side ◽  
Transmission Electron ◽  
Interfacial Dislocations ◽  
Image Simulations

Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO3 thin film mainly consist of tilted domains and dislocations.

Phase Formation and Hydrogen Ordering in Yttrium-Hydrogen System

2009 ◽  
Vol 1216 ◽  
Author(s):  
Ke Wang ◽  
Jason Hattrick-Simpers ◽  
Leonid Bendersky
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Electron Diffraction ◽  
Twin Boundaries ◽  
Sapphire Substrates ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
New Type

AbstractPhase transformations in epitaxial yttrium films grown on (0001)Ti//(0001)Al2O3 Ti-buffered sapphire substrates and hydrogenated for 10 min were characterized using transmission electron microscopy. After hydrogen charging, dense twin lamellae form during α(Y(H))-to-β(YH2) phase transition with twin boundaries predominately parallel to the interface between Y and a substrate. High densities of Shockley partial dislocations are present at the twin boundaries, their glides during phase transformation are responsible for the formation of twin lamellae. Electron diffraction from YH2 phase shows superlattice reflections, which suggests a new type of ordering on octahedral interstitial sites.

Stress-induced C14→C15 phase transformation in a Zr(Fe,Cr)2 Laves structured nanophase

2020 ◽  
Vol 53 (1) ◽  
pp. 222-225 ◽  
Author(s):  
Fusen Yuan ◽  
Chengze Liu ◽  
Fuzhou Han ◽  
Yingdong Zhang ◽  
Ali Muhammad ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Phase Boundary ◽  
Shear Deformation ◽  
Orientation Relationship ◽  
Stacking Faults ◽  
Hexagonal Close Packed ◽  
Partial Dislocations ◽  
Transmission Electron

The C14 (hexagonal close-packed) and C15 (face-centred cubic) close-packed structures are found to coexist in an individual Zr(Fe,Cr)2 Laves structured nanophase in Zircaloy-4 alloy with shear deformation. The orientation relationship between C15 and C14 is [\bar 1 10]C15//[11\bar 20]C14 and (\bar 111)C15//(0001)C14. The stacking faults (SFs) in the C15 structure and the high-density SFs between C15 and C14 have been identified using transmission electron microscopy, which showed they originated on close-packed planes by emission of 1/6〈\bar 2 \bar 1\bar 1〉 Shockley partial dislocations from the phase boundary. Furthermore, the stress-induced C14→C15 phase transformation took place during the shear deformation.

Transformation–dislocation dipoles in Laves phases: A high-resolution transmission electron microscopy analysis

2010 ◽  
Vol 25 (10) ◽  
pp. 1983-1991 ◽  
Author(s):  
J. Aufrecht ◽  
A. Leineweber ◽  
V. Duppel ◽  
E.J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Partial Dislocation ◽  
Laves Phases ◽  
Dislocation Configuration ◽  
Shockley Partial Dislocation ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Transmission Electron

Images of synchro-Shockley partial dislocation arrangements in the Laves phases NbCr2 and HfCr2 have been obtained by high-resolution transmission electron microscopy. The analysis of the stacking sequences around these arrangements revealed the role of the constituting partial dislocations in enabling the polytypic C14 → C36/6H phase transformation in both alloys. The synchro-Shockley partial dislocations occur in and move through the crystals mainly as dipoles of partials of opposite signs, leading to—as compared to isolated partials—strain fields of lesser extent. In NbCr2 a single, probably quenched synchro-Shockley partial dislocation dipole, consisting of two partials with Burgers vectors of opposite sign, was identified. The ordered passage of a series of this type of line defects brings about the C14 → C36 transformation. In HfCr2 a complex synchro-Shockley partial dislocation configuration was revealed. It can be regarded as an “antiphase boundary” between two C36 domains. It is likely that this defect structure had formed by impingement of two domains of C36 growing perpendicular to the stacking direction by glide of synchro-Shockley partial dislocation dipoles.

scholarly journals Oxygen Induced Phase Transformation in TC21 Alloy with a Lamellar Microstructure

Metals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 163
Author(s):  
Shu Wang ◽  
Yilong Liang ◽  
Hao Sun ◽  
Xin Feng ◽  
Chaowen Huang
Keyword(s):  
Electron Microscopy ◽  
Phase Transformation ◽  
Oxygen Uptake ◽  
Titanium Alloys ◽  
Electron Backscatter Diffraction ◽  
Lamellar Microstructure ◽  
Α Phase ◽  
Transmission Electron ◽  
The Matrix ◽  
Oxygen Ingress

The main objective of the present study was to understand the oxygen ingress in titanium alloys at high temperatures. Investigations reveal that the oxygen diffusion layer (ODL) caused by oxygen ingress significantly affects the mechanical properties of titanium alloys. In the present study, the high-temperature oxygen ingress behavior of TC21 alloy with a lamellar microstructure was investigated. Microstructural characterizations were analyzed through optical microscopy (OM), scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), and transmission electron microscopy (TEM). Obtained results demonstrate that oxygen-induced phase transformation not only enhances the precipitation of secondary α-phase (αs) and forms more primary α phase (αp), but also promotes the recrystallization of the ODL. It was found that as the temperature of oxygen uptake increases, the thickness of the ODL initially increases and then decreases. The maximum depth of the ODL was obtained for the oxygen uptake temperature of 960 °C. In addition, a gradient microstructure (αp + β + βtrans)/(αp + βtrans)/(αp + β) was observed in the experiment. Meanwhile, it was also found that the hardness and dislocation density in the ODL is higher than that that of the matrix.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

Extended Defects in 4H-SiC PiN Diodes

2002 ◽  
Vol 742 ◽  
Author(s):  
M. E. Twigg ◽  
R. E. Stahlbush ◽  
M. Fatemi ◽  
S. D. Arthur ◽  
J. B. Fedison ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Compressive Strain ◽  
Pin Diode ◽  
Extended Defects ◽  
Pin Diodes ◽  
Plan View ◽  
Shockley Partial ◽  
Inhomogeneous Strain ◽  
Partial Dislocations ◽  
Transmission Electron

ABSTRACTUsing site-specific plan-view transmission electron microscopy (TEM) and lightemission imaging (LEI), we have identified SFs formed during forward biasing of 4H-SiC PiN diodes. These SFs are bounded by Shockley partial dislocations and are formed by shear strain rather than by condensation of vacancies or interstitials. Detailed analysis using TEM diffraction contrast experiments reveal SFs with leading carbon-core Shockley partial dislocations as well as with the silicon-core partial dislocations observed in plastic deformation of 4H-SiC at elevated temperatures. The leading Shockley partials are seen to relieve both tensile and compressive strain during PiN diode operation, suggesting the presence of a complex and inhomogeneous strain field in the 4H-SiC layer.

In-Situ Transmission Electron Microscopy and Computer Simulation Study of the Kinetics of Oxygen Loss in Yba2Cu3OZ

1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulation Study ◽  
Oxygen Loss ◽  
Domain Structures ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Image Simulations

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.

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