Processing effects on the composition and dielectric properties of hydrothermally derived BaxSr(1−x)TiO3 thin films

Polycrystalline BaxSr(1−x)TiO3 (BST) thin films were processed on Pt-coated glass substrates at temperatures below 100 °C by reacting TiO2 films in alkaline solutions containing Ba2+ and/or Sr2+. The TiO2 was deposited by spin-casting a titanium metalorganic precursor onto Pt-coated glass substrates, followed by pyrolysis in air at 400 °C. Film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The BST thin films had dielectric constants ranging from 100 to 185 and dielectric loss values below 0.25. Capacitance–voltage and current–voltage relationships were examined to determine the effect of phase stoichiometry and processing route on dielectric properties.

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STRUCTURE AND DIELECTRIC PROPERTIES OF La-DOPED LEAD STRONTIUM TITANATE THIN FILMS DERIVED FROM SOL–GEL METHOD

Surface Review and Letters ◽

10.1142/s0218625x08010877 ◽

2008 ◽

Vol 15 (01n02) ◽

pp. 13-18

Author(s):

X. T. LI ◽

C. WU ◽

W. J. WENG ◽

G. R. HAN ◽

P. Y. DU

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Perovskite Phase ◽

Sol Gel ◽

Dielectric Constants ◽

X Ray Diffraction ◽

Glass Substrates ◽

Ito Glass ◽

Gel Technique ◽

La Doped

A series of ( Pb 0.4 Sr 0.6)1-x La 2x/3 TiO 3 (PSLT) thin films were deposited on ITO/glass substrates by sol–gel technique. Their phase status, surface morphology, and dielectric properties were studied by X-ray diffraction, scanning electron microscope, and impedance analyzer, respectively. Results show that the PSLT thin films were consisted of tetragonal perovskite phase PSLT thin films for x < 0.4, and cubic perovskite phase PSLT thin films for x > 0.4. Dielectric properties such as dielectric constants, dielectric tunabilitis, and inharmonic coefficient were characterized as a function of the film composition.

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X- ray diffraction and dielectric properties of PbSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.115 ◽

2019 ◽

Vol 15 (34) ◽

pp. 1-14

Author(s):

Bushra A. Hasan

Keyword(s):

Thin Films ◽

Thermal Activation ◽

Thermal Evaporation ◽

Thermal Activation Energy ◽

Dielectric Constants ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

Integrated Ferroelectrics ◽

10.1080/10584580601085404 ◽

2006 ◽

Vol 86 (1) ◽

pp. 159-169 ◽

Cited By ~ 2

Author(s):

SU-JAE LEE ◽

HAN-CHEOL RYU ◽

YOUNG-TAE KIM ◽

MIN-HWAN KWAK ◽

SEUNGEON MOON ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Bst Thin Films

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Characterization of nanocrystalline Ni–Cu thin films electrodeposited onto ITO coated glass substrates: effect of pretreatment current density

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-013-1170-x ◽

2013 ◽

Vol 24 (8) ◽

pp. 2777-2784 ◽

Cited By ~ 5

Author(s):

Umut Sarac ◽

M. Celalettin Baykul

Keyword(s):

Thin Films ◽

Current Density ◽

Coated Glass ◽

Glass Substrates

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Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

Applied Surface Science ◽

10.1016/j.apsusc.2014.09.034 ◽

2014 ◽

Vol 320 ◽

pp. 309-314 ◽

Cited By ~ 15

Author(s):

Biswajit Ghosh ◽

Kamlesh Kumar ◽

Balwant Kr Singh ◽

Pushan Banerjee ◽

Subrata Das

Keyword(s):

Thin Films ◽

Chemical Bath Deposition ◽

Coated Glass ◽

Glass Substrates ◽

Cds Thin Films

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Structural and dielectric properties of PLD grown BST thin films

Vacuum ◽

10.1016/j.vacuum.2018.10.010 ◽

2019 ◽

Vol 159 ◽

pp. 69-75 ◽

Cited By ~ 5

Author(s):

Reema Gupta ◽

Vinay Gupta ◽

Monika Tomar

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Bst Thin Films

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Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.177 ◽

2007 ◽

Vol 124-126 ◽

pp. 177-180

Author(s):

Jang Sik Lee ◽

Q.X. Jia

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Dielectric Properties ◽

Bottom Electrode ◽

Dielectric Constants ◽

The Other ◽

Field Range ◽

Anisotropic Dielectric ◽

Dielectric Nonlinearity ◽

La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

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Microstructure and Dielectric Properties of LixTixNi1-2xO Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.368-372.1817 ◽

2008 ◽

Vol 368-372 ◽

pp. 1817-1819

Author(s):

Cui Hua Zhao ◽

Bo Ping Zhang ◽

Yong Liu ◽

Song Jie Li

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Spin Coating ◽

Sol Gel ◽

Dielectric Constants ◽

Co Doping ◽

Grain Sizes ◽

Uniform Microstructure ◽

Coating Method ◽

High Dielectric

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.

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Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

MRS Proceedings ◽

10.1557/proc-813-h4.3 ◽

2004 ◽

Vol 813 ◽

Author(s):

Galina M. Khlyap ◽

Petro G. Sydorchuk ◽

Jacek Polit

Keyword(s):

Thin Films ◽

Room Temperature ◽

Hydrogen Treatment ◽

Narrow Gap ◽

Glass Substrates ◽

Semiconductor Thin Films ◽

Visible Wavelength Range ◽

Current Voltage ◽

Before And After ◽

First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

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SPECTROSCOPIC ELLIPSOMETRY INVESTIGATION ON OPTICAL PROPERTIES OF Fe:SNO2 THIN FILMS: EFFECTS OF IRON CONCENTRATION

Surface Review and Letters ◽

10.1142/s0218625x20500444 ◽

2020 ◽

pp. 2050044

Author(s):

SAHAR MORADI ◽

HASSAN SEDGHI

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Sol Gel ◽

Iron Concentration ◽

Dielectric Constants ◽

Bandgap Energy ◽

Dispersion Parameters ◽

Glass Substrates ◽

Coating Method

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.

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