Devitrification and dielectric properties of (Na2O,BaO)–Nb2O5–SiO2 and (K2O,SrO)–Nb2O5–SiO2 glass–ceramics

2007 ◽  
Vol 22 (7) ◽  
pp. 1996-2003 ◽  
Author(s):  
Fei Peng ◽  
Robert F. Speyer ◽  
Wesley Hackenberger
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Alkaline Earth ◽  
Amorphous Matrix ◽  
Glass Ceramics ◽  
Dielectric Constants ◽  
Sio2 Glass ◽  
Increasing Temperature

(Na2O,BaO)–Nb2O5–SiO2 and (K2O,SrO)–Nb2O5–SiO2 glass ribbons with varying proportions of alkali and alkaline earth were formed using roller quenching. (Na2O,BaO)–Nb2O5–SiO2 glasses of compositions devitrified to form Ba2NaNb5O15 (in the form of ∼80 nm crystallites in an amorphous matrix) yielded frequency-stable dielectric constants of ∼250 and losses of ∼0.05. Such low losses and frequency stabilities were also observed from (K2O,SrO)–Nb2O5–SiO2 glasses of compositions forming predominantly KSr2Nb5O6 (∼30 nm crystals), yielding dielectric constants of ∼400. Both optimized compositions showed moderate decreases in dielectric constant with increasing temperature.

Dielectric Properties of Blackberries as Related to Microwave Drying Control

2017 ◽  
Vol 13 (12) ◽  
Author(s):  
Chunfang Song ◽  
Tian Sang ◽  
Haiying Chen ◽  
Li Zhenfeng ◽  
Li Jing
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Moisture Content ◽  
Penetration Depth ◽  
Loss Factor ◽  
Large Scale ◽  
Coaxial Line ◽  
Dielectric Constants ◽  
Microwave Drying ◽  
Increasing Temperature

AbstractThe dielectric properties of blackberry samples with a 20.0–80.0 % w.b (web basis) moisture content were determined with a network analyzer and an open-ended coaxial-line probe over a frequency range from 5 to 3000 MHz and a temperature range from 20 to 100 °C. The results showed that the dielectric constant decreased with increasing temperature but increased with increasing moisture content; however, the loss factor increased with increasing temperature and moisture content. The dielectric constant and the loss factor decreased with increasing frequency. The penetration depth decreased with increasing temperature, frequency and moisture content. A large penetration depth at 915 MHz may provide practical large-scale dielectric drying for blackberries. The dielectric constants and loss factors for blackberry by combining the above mathematical model and temperature and moisture of the sample in the microwave drying process were used to analyze and control blackberry drying technology.

Crystallization and dielectric properties of SrO–BaO–Nb2O5–GeO2 tungsten–bronze glass–ceramics

2001 ◽  
Vol 16 (7) ◽  
pp. 2057-2063 ◽  
Author(s):  
Jiin-Jyh Shyu ◽  
Hsin-Wei Peng
Keyword(s):  
Heat Treatment ◽  
Dielectric Properties ◽  
Tungsten Bronze ◽  
Glass Ceramics ◽  
Dielectric Behavior ◽  
Dendritic Morphology ◽  
Dielectric Constants ◽  
Two Stage ◽  
Tetragonal Tungsten Bronze ◽  
Stage Heat Treatment

The crystallization and dielectric properties of SrO–BaO–Nb2O5–GeO2 glass–ceramics were investigated. One- and two-stage heat-treatment methods were used to convert the parent glass to glass–ceramics. Strontium barium niobate (SBN) with a tetragonal tungsten-bronze structure formed as the major crystalline phase. When the crystallizing temperature/time was increased, the secondary crystalline BaGe2O5 phase coexisted with SBN. BaGe2O5 formed as a surface layer grown from the surface into the interior of the sample. The dendritic morphology of SBN crystals was examined. The glass–ceramics crystallized by two-stage heat treatment have higher dielectric constants than those crystallized by one-stage heat treatment. The highest dielectric constant that was obtained in the present glass–ceramics was 320. The glass–ceramics showed relaxor-type dielectric behavior.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

scholarly journals The effects of calcination and doping on structural and dielectric properties of CaCu3-xCoxTi4O12 ceramic

2019 ◽  
Vol 8 (3) ◽  
pp. 234
Author(s):  
Nasr Hadi ◽  
Tajdine Lamcharfi ◽  
Farid Abdi ◽  
Nor-Said Echtoui ◽  
Ahmed Harrach ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Xrd Analysis ◽  
Secondary Phases ◽  
Solid State Method ◽  
Complex Impedance Analysis ◽  
Oxide Powders ◽  
Increasing Temperature

<p class="Abstract"><span lang="EN-US">The influences of calcination temperature and doping with cobalt in A–site on structural and dielectric properties of CaCu<sub>3-x</sub>Co<sub>x</sub>Ti<sub>4</sub>O<sub>12</sub> (CCCxTO, x = 0.00, 0.02 and 0.10) ceramics sintered at 1050 <sup>0</sup>C for 8h were investigated. The ceramic samples are prepared by the conventional solid-state method using high purity oxide powders, and they are calcined at 850 °C, 950 °C and 1050 <sup>0</sup>C for 4h. The X-ray diffraction (XRD) analysis of pure and doped CCTO samples calcined at 950 °C and 1050 <sup>0</sup>C showed no traces of any other secondary phases, while impurity phases alongside CCTO phase in the x=0.00 sample calcined at 850 <sup>0</sup>C was observed. Scanning electron microscopy (SEM) investigation showed an increase in grain size with increasing of Co content and calcining temperature. Dielectric measurements indicated that the dielectric constant of the pure CCTO calcined at 1050 <sup>0</sup>C/4h has a low value in the frequency range of 1kHz up to 1MHz, whereas the substitution of Co up to x = 0.10 into CCTO caused a huge increase in the dielectric constant value of the calcined samples which is equal to 153419 and 18957 at 950 <sup>°</sup>C and 1050 <sup>0</sup>C respectively. The complex impedance analysis of all samples shows a decrease in resistance with an increasing temperature, which suggests a semiconductor nature of the samples.</span></p>

Effect of Sintering Temperature on Dielectric Properties of CaCu3Ti4O12 Ceramics Prepared by Mechanochemical Process

2014 ◽  
Vol 974 ◽  
pp. 157-161
Author(s):  
Masturah Mohamed ◽  
Mahesh Talari ◽  
Mohd Salleh Mohd Deni ◽  
Azlan Zakaria
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sintering Temperature ◽  
Processing Conditions ◽  
Dielectric Measurements ◽  
Frequency Range ◽  
Grain Sizes ◽  
Barrier Capacitance ◽  
Different Temperatures ◽  
Increasing Temperature

CaCu3Ti4O12(CCTO) is well known to have colossal dielectric constant in the range of 105.It is widely accepted that this phenomenon may be attributed to internal layer barrier capacitance (IBLC) model. The dielectric properties of CCTO were reported to be strongly dependent on the processing conditions and grain size. In this work, CCTO samples with different grain sizes were produced by varying sintering temperature in order to investigate IBLC effect on dielectric properties of CCTO. The samples were sintered at four different temperatures, (T=1100°C, 1050°C, 1000°C and 950°C). Dielectric measurements were carried out for the samples in the frequency range of 102– 106Hz using impedance spectrometer. Electron micrographs showed that increasing temperature promoted the grain growth of CCTO while sintering. The internal crystalline defects are seen to play major role by increasing the grain conductivity in dipole formation and increased the dielectric constant of the samples.

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

Dielectric properties of barium titanium niobates

1997 ◽  
Vol 12 (2) ◽  
pp. 526-530 ◽  
Author(s):  
G. L. Roberts ◽  
R. J. Cava ◽  
W. F. Peck ◽  
J. J. Krajewski
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Dielectric Constants ◽  
Partial Substitution ◽  
Dielectric Measurements ◽  
Niobium Oxides ◽  
Polycrystalline Ceramic ◽  
Barium Titanium ◽  
Very Low Temperature

The results of measurements of dielectric constants, in the vicinity of ambient temperature, are presented for eight barium titanium niobium oxides (BaTi1+2nNb4O13+4n for n = 0, 1, 2, 3, 4; Ba3Ti4Nb4O21, Ba3Ti5Nb6O28, and Ba6Ti2Nb8O30) in polycrystalline ceramic form. The dielectric constants are in the range of 30 to 70. The results of dielectric measurements on solid solutions obtained by partial substitution of Ta for Nb are also reported. These substitutions do not dramatically increase the dielectric constants. One material, Ta-substituted Ba3Ti5Nb6O28, has a very low temperature coefficient of dielectric constant at K ≈ 45.

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