Nanoalloyed Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 Multilayers

2011 ◽  
Vol 1329 ◽  
Author(s):  
M. Winkler ◽  
Jan D. Koenig ◽  
S. Buller ◽  
U. Schuermann ◽  
L. Kienle ◽  
...  

ABSTRACTIn this work, thin films of Bi2Te3 and Sb2Te3 were synthesized by the nanoalloying approach: Nanoscale layers of the elements Element nanoscale layers of Bi, Sb and Te are stoichiometrically deposited on a cold substrate using a MBE setup and subjected to an annealing process in which a solid state reaction yielding Bi2Te3 and Sb2Te3 takes place. Besides the two binary compounds, nanoscale multilayer (ML) stacks of 9 nm Bi2Te3/9 nm Sb2Te3 were created. The electrical transport properties of the binary compounds were determined in dependence of composition. Compound formation was directly observed in temperature-dependent in-situ XRD scans and was found to start at ∼100 °C. The stability of the Bi2Te3/Sb2Te3 ML nanostructure against temperature-driven interdiffusion during annealing was examined by SIMS and TEM for an annealing temperature of 150 and 250 °C, respectively. A comparative TEM study of the as grown and annealed state is presented.

2017 ◽  
Vol 24 (5) ◽  
pp. 975-980 ◽  
Author(s):  
Shuai Yan ◽  
Hui Jiang ◽  
Hua Wang ◽  
Yan He ◽  
Aiguo Li ◽  
...  

Multilayers made of Ru/C are the most promising candidates when working in the energy region 8–20 keV. The stability of its thermal properties, including thermal expansion and thermal conduction, needs to be considered for monochromator or focusing components. Ru/C multilayers with periodic thicknesses of 3, 4 and 5 nm were investigatedin situby grazing-incidence X-ray reflectometry and diffuse scattering in order to study their thermal expansion characteristics as a function of annealing temperature up to 400°C. The thermal conductivity of multilayers with the same structure was also measured by the transient hot-wire method and compared with bulk values.


2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.


2007 ◽  
Vol 204 (7) ◽  
pp. 2339-2346 ◽  
Author(s):  
Hanjong Paik ◽  
Youngha Kim ◽  
Kwangsoo No ◽  
David P. Cann ◽  
DongJoo Yoon ◽  
...  

2018 ◽  
Vol 24 (8) ◽  
pp. 5629-5632 ◽  
Author(s):  
Sweety Supriya ◽  
Sunil Kumar ◽  
Manoranjan Kar

The ac conductivity and dielectric properties on CoFe2−xMnxO4 for x = 0.00, 0.10, 0.15 and 0.20 have been studied in detail. All the samples were prepared in nanocrystalline size. These materials are found to be crystallized to Fd <mml:math display="block"> <mml:semantics> <mml:mover accent="true"> <mml:mi>3</mml:mi> <mml:mo>¯</mml:mo> </mml:mover> </mml:semantics> </mml:math> m space group in cubic spinel structure. The dielectric constant and ac conductivity has been discussed as a function of frequency, temperature and composition. The relation between dielectric constant and ac conductivity has been analyzed and the results validate each other. The frequency response of ac conductivity (σac) obeys Johnschers power law and the parameters obtained, explain the sources of ac and dc electrical conductivity in the material. The frequency response of σac follows Maxwell–Wagner two-layer model. The influence of frequency as pumping force on activation energy has been determined. The temperature dependent ac conductivity shows the Arrhenius behavior. The σac observed to be enhanced with increase in frequency as well as temperature. The semiconducting behavior (NTCR) was also evident from temperature dependent electrical transport properties study. The low value of ac conductivity suggests a possible use of this material in dielectric applications.


Carbon ◽  
2015 ◽  
Vol 93 ◽  
pp. 384-392 ◽  
Author(s):  
Xiao-Wen Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Cheng Zhang ◽  
Yi-Lin Sun ◽  
...  

2010 ◽  
Vol 97 (5) ◽  
pp. 053107 ◽  
Author(s):  
Yujie Ren ◽  
Shanshan Chen ◽  
Weiwei Cai ◽  
Yanwu Zhu ◽  
Chaofu Zhu ◽  
...  

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