Neural Cell Attachment on Metal Ion Implanted Glass Surfaces

2011 ◽  
Vol 1354 ◽  
Author(s):  
Emel Sokullu-Urkac ◽  
Ahmet Oztarhan ◽  
Ismet Deliloglu-Gurhan ◽  
Sultan Gulce-Iz ◽  
Feyzan Ozdal-Kurt ◽  
...  
Keyword(s):  
Metal Ion ◽  
Cell Attachment ◽  
Metal Vapor ◽  
Implantation Dose ◽  
Neural Cell ◽  
Ion Source ◽  
Vacuum Arc ◽  
Neural Cells ◽  
Glass Surfaces ◽  
Ion Implanted

ABSTRACTWe have explored the application of ion implantation as a tool for the enhancement of neural cell growth on glass surfaces. Glass substrates were ion implanted with gold and with carbon using a metal vapor vacuum arc (MEVVA) ion source-based implantation system at Ege University Surface Modification Laboratory. The implantation dose was varied over the range 1014 – 1017 ions/cm2 and the ion energy spanned the range 20 – 80 keV. B35 neural cells were seeded and incubated on the implanted substrates for 48h at 37°C. After 2-days in culture the cell attachment behavior was characterized using phase contrast microscopy. The adhesion and direct contact of neural cells on these ion implanted glass surfaces were observed

The influence of nanostructure formation on properties for Cr implanted PET

2001 ◽  
Vol 665 ◽  
Author(s):  
Wu Yuguang ◽  
Zhang Tonghe ◽  
Zhang Huixing ◽  
Zhang Xiaoji ◽  
Cui Ping ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Dose Range ◽  
Surface Hardness ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Ion Beam Modification ◽  
Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

CHARACTERIZATION OF SURFACE PROPERTIES AND MICROSTRUCTURE OF PVD-TiN FILMS USING MEVVA ION IMPLANTATION

2006 ◽  
Vol 13 (04) ◽  
pp. 519-524
Author(s):  
J. H. YANG ◽  
M. F. CHENG ◽  
X. D. LUO ◽  
T. H. ZHANG
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Metal Vapor ◽  
Implantation Dose ◽  
Ion Source ◽  
Vacuum Arc ◽  
Tin Film ◽  
Transmission Electron ◽  
Pin On Disc

The PVD- TiN film was implanted with titanium ions and the improvement in surface wear resistance was investigated. Ti ion implantation was done using a metal vapor vacuum arc (MEVVA) ion source with an implantation dose of 2 × 1016 ions/cm2 and at an extraction voltage of 48 kV. The wear characteristics of the implanted zone was measured and compared to the performance of the unimplanted zone by a pin-on-disc apparatus and an optical interference microscope. The structure of the implanted zone and unimplanted one was observed by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). A dynamic TRIM called TRIDYN was used to calculate the concentration depth profile of implanted Ti in TiN to investigate the profile of multi-charge state ions. The results showed that the improved wear resistance of the TiN film was mainly due to the presence of nano-order TiN crystal grains after Ti ion implantation.

THE VOID EFFECT OF MEVVA W ION IMPLANTATION ON THE TRIBOLOGICAL PROPERTIES OF H13 STEEL

2004 ◽  
Vol 11 (04n05) ◽  
pp. 363-366 ◽  
Author(s):  
JIANHUA YANG ◽  
TONGHE ZHANG
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Ion Beam ◽  
Metal Vapor ◽  
Implantation Dose ◽  
Ion Source ◽  
Vacuum Arc ◽  
H13 Steel ◽  
Voltage Electron ◽  
Tungsten Concentration

H13 steel samples were implanted with tungsten using a metal vapor vacuum arc (MEVVA) ion source, with an implantation dose of 1×1017 cm -2, an extraction acceleration of 30 kV and pulsed ion beam fluxes of between 0.3 mA·cm -2 and 6 mA·cm -2. The surface mechanical properties and microstructure for the W-implanted samples was characterized by the Rutherford backscattering spectroscope (RBS) and a high voltage electron microscope (HVEM). Experimental results of wear and hardness indicated that the hardness and wear of H13 steel increased when the voids were produced by tungsten ion implantation with a high pulsed current density. Forming causes for voids and their influence on the tungsten concentration depth profile in the implanted H13 steel and the surface mechanical properties were discussed in terms of spike theory.

Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
K. M. Yu ◽  
B. Katz ◽  
I. C. Wu ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Room Temperature ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Interface Morphology ◽  
Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Surface Modification of Electromagnetic Railgun Components

1993 ◽  
Vol 316 ◽  
Author(s):  
M. A. Otooni ◽  
A. Graf ◽  
C. Dunham ◽  
Ian Brown ◽  
Xiang Yao
Keyword(s):  
Electron Microscopy ◽  
Metal Ion ◽  
High Energy ◽  
Ion Source ◽  
Vacuum Arc ◽  
Sufficient Evidence ◽  
Wear Properties ◽  
Implantation Energy ◽  
Rutherford Back Scattering ◽  
Spark Erosion

ABSTRACTCopper and aluminum used for rail and armature materials in electromagnetic railgun systems undergo severe degradation during the EM gun operation. The extent of this degradation is especially severe in guns operated at high energy levels or designed for repeated firings. In an effort to improve surface properties of the copper rail, armature, and sabot materials, the technique of metal ion implantation using a vacuum arc ion source has been employed. Preliminary tests have been conducted to identify the best implant species to improve spark erosion resistance, scratch resistance and hardness. The implanted species included Al, Ti, Cr, Ni, Ta, Ag, and W. The implantation energy range and dose varied between 100–180 KeV and 0.4 to 2 × 1017 cm-2, respectively . Several analytical techniques were also used to assess the effect of implanted species. These included Rutherford Back Scattering (RBS), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Microhardness Measurements, Spark Erosion and Scratch Testing. It has been tentatively concluded that Ta and Ni implantation of the copper rail substantially improve wear and inhibit arc erosion. There is also sufficient evidence to indicate that implantation of the aluminum armature with Cr and Ta, involving two stages of implantation, will also improve its mechanical and wear properties.

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

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