Radiation Induced Cavity Formation and Gold Precipitation at the Interfaces of a ZrO2/SiO2/Si Heterostructure

2011 ◽  
Vol 1298 ◽  
Author(s):  
Philip D Edmondson ◽  
Chongmin Wang ◽  
Zihua Zhu ◽  
Fereydoon Namavar ◽  
William J Weber ◽  
...  
Keyword(s):  
Binding Free Energy ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Damage State ◽  
X Ray ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
Radiation Induced ◽  
Silicon Interface ◽  
Secondary Ion

ABSTRACTThin films nano-crystalline zirconia of ~ 300 nm thick were deposited on Si substrate, and the samples were irradiated with 2 MeV Au+ ions at temperatures of 160 and 400 K, up to fluences of 35 displacements per atom. The films were then studied using glancing incidence x-ray diffraction, Rutherford backscattering, secondary ion mass spectroscopy and transmission electron microscopy. During the irradiation, cavities were observed to form at the zirconia/silicon interface. The morphology of the cavities was found to be related to the damage state of the underlying Si substrate. Elongated cavities were observed when the substrate is heavily damaged but not amorphized; however, when the substrate is rendered amorphous, the cavities become spherical. As the ion dose increases, the cavities then act as efficient gettering sites for the Au. The concentration of oxygen within the cavities determines the order in which the cavities getter. Following complete filling of the cavities, the interface acts as the secondary gettering site for the Au. The Au precipitates are determined to be elemental in nature due to the high binding free energy for the formation of Au-silicides.

Preparation and Properties of Nano-Crystalline Cellulose Electro-Rheological Fluid

2015 ◽  
Vol 815 ◽  
pp. 217-221
Author(s):  
Ling Li Xu ◽  
Xing Ling Shi ◽  
Qing Liang Wang
Keyword(s):  
Room Temperature ◽  
Silicone Oil ◽  
Strong Acid ◽  
Crystalline Cellulose ◽  
Methyl Silicone ◽  
Shearing Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Crystalline ◽  
Transmission Electron

nanocrystalline cellulose (NCC) was prepared from micro-crystalline cellulose (MCC) by strong acid hydrolysis. The characteristics of such particle were studied by transmission electron microscopy, X-ray diffraction and Fourier transform infrared spectroscopy. Electro-rheological fluids (ERF) were prepared by dispersing NCC and MCC in methyl-silicone oil, and their ER effects were measured. Experimental results indicated that NCC ERF exhibited a remarkable ER effect. The highest static shearing stress of NCC ERF (3.5 g/ml) was 5.1 kPa at the room temperature under a 4 .2 kV/mm electric field, increased about 5.5 times compared to MCC ERF, and sedimentation of NCC ERF was not observed even after 60 days.

Low-Temperature Synthesis of Nano-Crystalline ZnTiO3 Powders by Aqueous Sol-Gel Process

2014 ◽  
Vol 543-547 ◽  
pp. 3741-3744
Author(s):  
Quan Jing Mei ◽  
Cong Ying Li ◽  
Jing Dong Guo ◽  
Gui Wang ◽  
Hai Tao Wu
Keyword(s):  
Sol Gel ◽  
Zinc Nitrate ◽  
X Ray Diffraction ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Calcination Process ◽  
X Ray ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
Sol Gel Process

The ecandrewsite-type ZnTiO3was successfully synthesized by the aqueous sol-gel method using TiO2dioxide and zinc nitrate as starting materials instead of expensive organic solvent and metal alkoxides. The as-prepared nanopowders were characterized by X-ray diffraction (XRD), differential thermal analysis (DTA) and transmission electron microscopy (TEM), respectively. The results showed that the calcination process of gel consisted of a series of oxidation and combustion reactions, accompanied by significantly exothermal effects. Highly reactive nanosized ZnTiO3powders were successfully obtained at 850 °C with particle size ~50 nm. By comparison, the aqueous sol-gel process was the most effective and least expensive technique used for the preparation of ZnTiO3nanopowders.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Structural Characterization of Nano-Crystalline Mg2Si Prepared by Ball Milling

2010 ◽  
Vol 74 ◽  
pp. 48-53 ◽  
Author(s):  
Maria Ioannou ◽  
Euripides Hatzikraniotis ◽  
Christos B. Lioutas ◽  
Konstantinos M. Paraskevopoulos ◽  
Theodora Kyratsi
Keyword(s):  
Ball Milling ◽  
Milling Time ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
Size Evolution ◽  
Line Analysis

In this work, nano-crystalline Mg2Si powder was prepared by ball milling and structural studies vs ball milling time are presented. The identification of the phases of the materials and the evaluation of their purity were performed using Powder X-ray diffraction (PXRD). Crystallite size evolution during ball milling was followed by PXRD and single line analysis, based on Scherrer equation. Transmission Electron microscopy (TEM) observations and IR Reflectivity measurements were used for the investigation of nano-features and confirmation of the PXRD results.

Study of Ru barrier failure in the Cu/Ru/Si system

2007 ◽  
Vol 22 (9) ◽  
pp. 2505-2511 ◽  
Author(s):  
M. Damayanti ◽  
T. Sritharan ◽  
S.G. Mhaisalkar ◽  
E. Phoon ◽  
L. Chan
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Reaction Mechanisms ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Failure ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Scanning Electron

The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.

scholarly journals Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

Membranes ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 994
Author(s):  
Chyuan-Haur Kao ◽  
Chia-Shao Liu ◽  
Shih-Ming Chan ◽  
Chih-Chen Kuo ◽  
Shang-Che Tsai ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ph Sensing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doping ◽  
Transmission Electron ◽  
Multiple Material ◽  
Sensing Membrane ◽  
Secondary Ion ◽  
Mg Doped

In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH3 plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.

Microstructure and Electrical Properties of Zinc Films on InP

1995 ◽  
Vol 403 ◽  
Author(s):  
E. Kamiinska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
S. Kasjaniuk ◽  
E. Mizera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Secondary Ion Mass Spectrometry ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Inp Surface

AbstractThe interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

Structure and Composition of Luminescent Laterally Anodized Porous Si

1991 ◽  
Vol 256 ◽  
Author(s):  
K. H. Jung ◽  
S. Shih ◽  
T. Y. Hsieh ◽  
J. C. Campbell ◽  
D. L. Kwong ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Lower Layer ◽  
Amorphous Layer ◽  
Porous Si ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
High Concentrations ◽  
Secondary Ion ◽  
Very High

ABSTRACTWe have made structural and compositional studies of luminescent laterally anodized porous Si. Scanning electron microscopy reveals a surface with a network of cracks, while transmission electron microscopy shows a dual porous Si structure in which the upper layer is amorphous and the lower layer is either amorphous or crystalline, depending on anodization conditions. X-ray diffraction verified the presence of the amorphous layer. Secondary ion mass spectroscopy reveals very high concentrations of H, B, C, N, O, and F in the amorphous layer. Our results indirectly suggest that the amorphous layer is primarily responsible for luminescence.

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