Bio Organic-Based Gate Dielectric Materials for Thin Film Transistors

2012 ◽  
Vol 1467 ◽  
Author(s):  
James G. Grote ◽  
Fahima Ouchen ◽  
Donna M. Joyce ◽  
Kristi M. Singh ◽  
Narayanan Venkat ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
Variable Temperature ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Large Temperature ◽  
Hybrid Films ◽  
Dielectric Characterization ◽  
High Dielectric

ABSTRACTThe potential of bio-dielectrics for thin film transistor applications was explored via the incorporation of titanium dioxide (TiO2) nanoparticles, rutile form, a high dielectric constant (ε) ceramic, in the deoxyribonucleic acid (DNA) bio-polymer. The DNA-ceramic hybrid films were fabricated from stable suspensions of the TiO2 nanoparticles in viscous, aqueous DNA solutions. Dielectric characterization revealed that the incorporation of TiO2 in DNA resulted in enhanced dielectric constant (14.3 at 1 kHz for 40 wt % TiO2) relative to that of DNA in the entire frequency range of 1 kHz-1 MHz. Variable temperature dielectric measurements, in the 20-80°C range, of the DNA-TiO2 films revealed that the ceramic additive stabilizes DNA against large temperature dependent variations in both ε and the dielectric loss factor tan δ. The bulk resistivity of the DNA-TiO2 hybrid films was measured to be two to three orders of magnitude higher than that of the control DNA films, indicating their potential for utilization as insulating dielectrics in transistor and capacitor applications.

scholarly journals Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1058
Author(s):  
Yang-Yen Yu ◽  
Cheng-Huai Yang
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Inorganic Nanoparticles ◽  
Semiconductor Layer ◽  
Organic Thin Film ◽  
Switching Current ◽  
High Dielectric

High-transparency soluble polyimide with COOH and fluorine functional groups and TiO2-SiO2 composite inorganic nanoparticles with high dielectric constants were synthesized in this study. The polyimide and inorganic composite nanoparticles were further applied in the preparation of organic-inorganic hybrid high dielectric materials as the gate dielectric for a stretchable transistor. The optimal ratio of organic and inorganic components in the hybrid films was investigated. In addition, Jeffamine D2000 and polyurethane were added to the gate dielectric to improve the tensile properties of the organic thin film transistor (OTFT) device. PffBT4T-2OD was used as the semiconductor layer material and indium gallium liquid alloy as the upper electrode. Electrical property analysis demonstrated that the mobility could reach 0.242 cm2·V−1·s−1 at an inorganic content of 30 wt.%, and the switching current ratio was 9.04 × 103. After Jeffamine D2000 and polyurethane additives were added, the mobility and switching current could be increased to 0.817 cm2·V−1·s−1 and 4.27 × 105 for Jeffamine D2000 and 0.562 cm2·V−1·s−1 and 2.04 × 105 for polyurethane, respectively. Additives also improved the respective mechanical properties. The stretching test indicated that the addition of polyurethane allowed the OTFT device to be stretched to 50%, and the electrical properties could be maintained after stretching 150 cycles.

scholarly journals Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 698
Author(s):  
Junan Xie ◽  
Zhennan Zhu ◽  
Hong Tao ◽  
Shangxiong Zhou ◽  
Zhihao Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Semiconductor Device ◽  
Dielectric Materials ◽  
Oxide Semiconductor ◽  
Research Progress ◽  
High Dielectric

The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimization of low-temperature solution process. The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18493-18502 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Ranjodh Singh ◽  
Chung-Shu Wu ◽  
Umesh Chand ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
High Surface ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Surface Energy ◽  
Low Temperature Process

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

scholarly journals Growth, characterization, and thin film transistor application of CH3NH3PbI3 perovskite on polymeric gate dielectric layers

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Polymeric Surfaces ◽  
Dielectric Layers ◽  
Growth Characterization ◽  
Micron Size

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications

2018 ◽  
Vol 18 (11) ◽  
pp. 7566-7572 ◽  
Author(s):  
Weihua Wu ◽  
Kashif Javaid ◽  
Lingyan Liang ◽  
Jingjing Yu ◽  
Yu Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Thin Film Transistor ◽  
High Dielectric

Poly(vinyl acetate)/Clay Nanocomposite Materials for Organic Thin Film Transistor Application

2008 ◽  
Vol 8 (5) ◽  
pp. 2676-2679 ◽  
Author(s):  
B. J. Park ◽  
J. H. Sung ◽  
J. H. Park ◽  
J. S. Choi ◽  
H. J. Choi
Keyword(s):  
Thin Film ◽  
Vinyl Acetate ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Fracture Morphology ◽  
Dielectric Materials ◽  
Nanocomposite Materials ◽  
Clay Nanocomposites ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

Spin-on Gate Dielectric Materials for Next Generation Display Systems

2006 ◽  
Vol 936 ◽  
Author(s):  
Jinghong Chen ◽  
Mehari Stifanos ◽  
Jan Nedbal ◽  
Ahila Krishnamoorthy ◽  
Emma Brouk ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Curing Temperature ◽  
Type I ◽  
Display Systems

ABSTRACTWe present recent advances on spin-on polymers as gate dielectric for thin film transistors. We have developed film type I with significantly improved dielectric properties. At a curing temperature of 250 °C, the dielectric constant is 3.46, the breakdown voltage is 4.10 MV/cm at 1 μA/cm2, the leakage current is 4.9 × 10−8 A/cm2 at 2.5 MV/cm, and the CV hysteresis is 3.4 V. At a curing temperature of 425 °C, the dielectric constant, the breakdown voltage, the leakage current, and the CV hysteresis are 3.2, 4.73 MV/cm, 2.6 × 10−8 A/cm2, and 0.44 V respectively.

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

2010 ◽  
Vol 97 (18) ◽  
pp. 183503 ◽  
Author(s):  
Jang-Yeon Kwon ◽  
Ji Sim Jung ◽  
Kyoung Seok Son ◽  
Kwang-Hee Lee ◽  
Joon Seok Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Bias Instability ◽  
The Impact

Polymer thin-film transistor based on a high dielectric constant gate insulator

2007 ◽  
Vol 16 (4) ◽  
pp. 1145-1149 ◽  
Author(s):  
Lü Wen ◽  
Peng Jun-Biao ◽  
Yang Kai-Xia ◽  
Lan Lin-Feng ◽  
Niu Qiao-Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Polymer Thin Film ◽  
High Dielectric
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