InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)

ABSTRACTIn this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD) [1]. Initial x-ray diffraction (XRD) analysis results indicated that an InGaN alloy layer formed under the InN during growth. No GaN was seen from the original buffer layer. It was postulated that indium metal deposited prior to complete nitridation diffused into the relatively thin GaN layer producing InGaN. To verify the integrity of the insulating GaN layer, a third party GaN substrate was substituted. Results were unchanged. Parameters were then modified to reduce the amount of indium used for the initial metal deposition. XRD results indicated a sharper interface between the semi-insulating GaN and conductive InN layer. Hall Effect measurements are included. We’ve shown that the growth of a device suitable heterostructure is possible using the MEAglow technique.

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Diffusion of Critical Elements in Steel during Thermal Treatments in a Diamond Chemical Vapour Deposition Atmosphere

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.258-260.270 ◽

2006 ◽

Vol 258-260 ◽

pp. 270-275

Author(s):

V.F. Neto ◽

Raquel Vaz ◽

T. Shokuhfar ◽

C.A.A. Ghumman ◽

Orlando M.N.D. Teodoro ◽

...

Keyword(s):

Substrate Temperature ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Film Growth ◽

Steel Substrate ◽

Chemical Vapour ◽

Xrd Analysis ◽

Growth Conditions ◽

Diamond Growth ◽

Critical Elements

In this study, it will be investigated the diffusion of critical elements, namely, carbon (C) and iron (Fe), into a steel substrate (Impax Supreme) during the diamond chemical vapour deposition (CVD) process. The substrate temperature was varied from 700 to 850°C by plasma power manipulations to enable the correlation of substrate temperature with diffusion length and depth of the above mentioned critical elements into steel during film growth conditions. Methane concentration is also a parameter which has been considered during the parametric analysis. The crystalline compounds formed during the diamond growth process are studied using XRD analysis. In addition, SIMS technique is used with depth profiling to monitor the diffusion of elements during the process. The results obtained enabled to improve traditional understanding about the mechanisms relating to diamond deposition on steel substrates using CVD processes.

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Infrared spectroscopic and X-ray diffraction characterization of iron disulphide thin films prepared by metal-organic chemical vapour deposition

Journal of Materials Science Letters ◽

10.1007/bf00730854 ◽

1992 ◽

Vol 11 (16) ◽

pp. 1131-1133 ◽

Cited By ~ 8

Author(s):

A. Ennaoui ◽

S. Schroetter ◽

S. Fiechter ◽

H. Tributsch

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

X Ray Diffraction ◽

X Ray ◽

Infrared Spectroscopic ◽

Metal Organic

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Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.97-101.4213 ◽

2010 ◽

Vol 97-101 ◽

pp. 4213-4216

Author(s):

Jian Xiong Liu ◽

Zheng Yu Wu ◽

Guo Wen Meng ◽

Zhao Lin Zhan

Keyword(s):

Electron Microscopy ◽

Room Temperature ◽

Vapour Deposition ◽

Chemical Vapour ◽

Photoluminescence Properties ◽

X Ray Diffraction ◽

X Ray ◽

Selected Area Electron Diffraction ◽

Transmission Electron ◽

Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

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Attempts to p-Dope Ultrananocrystalline Diamond Films in a Hot Filament Reactor

MRS Proceedings ◽

10.1557/proc-0956-j09-31 ◽

2006 ◽

Vol 956 ◽

Author(s):

Paul William May ◽

Matthew Hannaway

Keyword(s):

Vapour Deposition ◽

Film Growth ◽

Substrate Surface ◽

Diamond Films ◽

Chemical Vapour ◽

Grain Sizes ◽

Ultrananocrystalline Diamond ◽

The Individual ◽

P Type ◽

Hot Filament

ABSTRACTUltrananocrystalline diamond (UNCD) films have been deposited using hot filament chemical vapour deposition using Ar/CH4/H2 gas mixtures plus additions of B2H6 in an attempt to make p-type semiconducting films. With increasing additions of B2H6 from 0 to 40,000 ppm with respect to C, the film growth rate was found to decrease substantially, whilst the individual grain sizes increased from nm to μm. With 40,000 ppm of B2H6, crystals of boric oxide were found on the substrate surface, which slowly hydrolysed to boric acid on exposure to air. These results are rationalised using a model for UNCD growth based on competition for surface radical sites between CH3 and C atoms.

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Thin film growth of gadolinia by metal-organic chemical vapour deposition (MOCVD)

Thin Solid Films ◽

10.1016/s0040-6090(95)08513-0 ◽

1996 ◽

Vol 286 (1-2) ◽

pp. 64-71 ◽

Cited By ~ 20

Author(s):

John McAleese ◽

John C Plakatouras ◽

Brian C.H Steele

Keyword(s):

Thin Film ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Film Growth ◽

Chemical Vapour ◽

Thin Film Growth ◽

Organic Chemical ◽

Metal Organic

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Chemical vapour deposition tungsten film growth studied by in situ growth stress measurements

Thin Solid Films ◽

10.1016/0040-6090(93)90579-e ◽

1993 ◽

Vol 228 (1-2) ◽

pp. 125-128 ◽

Cited By ~ 4

Author(s):

G.J. Leusink ◽

T.G.M. Oosterlaken ◽

G.C.A.M. Janssen ◽

S. Redelaar

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Film Growth ◽

Chemical Vapour ◽

Growth Stress ◽

In Situ Growth ◽

Stress Measurements ◽

Tungsten Film

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Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.1507 ◽

2000 ◽

Vol 338-342 ◽

pp. 1507-1510 ◽

Cited By ~ 1

Author(s):

V. Williams ◽

Etienne Pernot ◽

E. Ramberg ◽

Elisabeth Blanquet ◽

Jean Marie Bluet ◽

...

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Film Growth ◽

Chemical Vapour ◽

Low Pressure ◽

Pressure Chemical

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Examination of Titanium Oxides, Lead Oxides and Lead Titanates Using X-Ray Diffraction and Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-310-385 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 4

Author(s):

Lynnette D. Madsen ◽

Louise Weaver

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Vapour Deposition ◽

Mixed Oxides ◽

Chemical Vapour ◽

Titanium Oxides ◽

X Ray Diffraction ◽

X Ray ◽

Lead Oxides ◽

Metalorganic Chemical Vapour Deposition

AbstractSingle oxides (with titanium or lead) deposited as thin films by low pressure metalorganic chemical vapour deposition were investigated by x-ray diffraction and Raman spectroscopy. Examination of mixed oxides (titanates) and silicates were also carried out using these techniques. The crystallographic nature of these thin films were examined and comparisons made to their bulk counterparts. The deposition and anneal conditions 600 for producing cubic PbTiO3 films are discussed briefly.

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Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.221 ◽

2016 ◽

Vol 858 ◽

pp. 221-224

Author(s):

Lian Bi Li ◽

Zhi Ming Chen

Keyword(s):

Vapour Deposition ◽

Lattice Mismatch ◽

Lattice Structure ◽

Chemical Vapour ◽

Structure Model ◽

X Ray Diffraction ◽

X Ray ◽

Plane Orientation ◽

Pressure Chemical ◽

Si Films

The Si/SiC heterojunctions were prepared on 6H-SiC(0001) by low-pressure chemical vapour deposition at 900°C. X-ray diffraction was employed to investigate the in-plane orientation of Si/SiC heterojunctions. A FCC-on-HCP parallel epitaxy was achieved for the Si(111)/SiC(0001) heterostructure with a growth temperature of 900°C and the in-plane orientation relationship was [01-1]Si//[11-20]6H-SiC. Based on the in-plane orientation characterizations, the lattice-structure model of the Si/6H-SiC heterostructure was constructed. It is shown that when the in-plane orientation was (111)[01-1]Si//(0001)[11-20]6H-SiC, the Si/6H-SiC interface had a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%, and the misfit dislocation density at the Si/SiC interface was calculated as 0.487×1014cm-2.

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