Leveraging Contact Effects for Field-Effect Transistor Technologies with Reduced Complexity and Superior Current Uniformity

ABSTRACTIn order to achieve high performance, the design of devices for large-area electronics needs to be optimized despite material or fabrication shortcomings. In numerous emerging technologies thin-film transistor (TFT) performance is hindered by contact effects. Here, we show that contact effects can be used constructively to create devices with performance characteristics unachievable by conventional transistor designs. Source-gated transistors (SGTs) are not designed with increasing transistor speed, mobility or sub-threshold slope in mind, but rather with improving certain aspects critical for real-world large area electronics such as stability, uniformity, power efficiency and gain. SGTs can achieve considerably lower saturation voltage and power dissipation compared to conventional devices driven at the same current; higher output impedance for over two orders of magnitude higher intrinsic gain; improved bias stress stability in amorphous materials; higher resilience to processing variations; current virtually independent of source-drain gap, source-gate overlap and semiconductor thickness variations. Applications such as amplifiers and drivers for sensors and actuators, low cost large area analog or digital circuits could greatly benefit from incorporating the SGT architecture.

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Toward Manufacturing Low-Cost, Large-Area Electronics

MRS Bulletin ◽

10.1557/mrs2006.121 ◽

2006 ◽

Vol 31 (6) ◽

pp. 471-475 ◽

Cited By ~ 12

Author(s):

Marc Chason ◽

Daniel R. Gamota ◽

Paul W. Brazis ◽

Krishna Kalyanasundaram ◽

Jie Zhang ◽

...

Keyword(s):

Printed Electronics ◽

Low Cost ◽

Consumer Products ◽

Electronic Systems ◽

Printed Wiring Board ◽

Large Area ◽

Active Devices ◽

Materials Research ◽

Wiring Board ◽

Large Area Electronics

AbstractDevelopments originally targeted toward economical manufacturing of telecommunications products have planted the seeds for new opportunities such as low-cost, large-area electronics based on printing technologies. Organic-based materials systems for printed wiring board (PWB) construction have opened up unique opportunities for materials research in the fabrication of modular electronic systems.The realization of successful consumer products has been driven by materials developments that expand PWB functionality through embedded passive components, novel MEMS structures (e.g., meso-MEMS, in which the PWB-based structures are at the milliscale instead of the microscale), and microfluidics within the PWB. Furthermore, materials research is opening up a new world of printed electronics technology, where active devices are being realized through the convergence of printing technologies and microelectronics.

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Process Design Kit and Design Automation for Flexible Hybrid Electronics

Journal of Microelectronics and Electronic Packaging ◽

10.4071/imaps.925849 ◽

2019 ◽

Vol 16 (3) ◽

pp. 117-123

Author(s):

Tsung-Ching Huang ◽

Ting Lei ◽

Leilai Shao ◽

Sridhar Sivapurapu ◽

Madhavan Swaminathan ◽

...

Keyword(s):

Process Design ◽

Design Automation ◽

High Performance ◽

Large Scale ◽

Low Cost ◽

Thin Film Transistor ◽

Solution Process ◽

Oxide Semiconductor ◽

Wearable Electronics ◽

Wide Range

Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexible substrates for a wide range of applications, from flexible displays to wearable medical devices. Here, we report (1) a process design kit (PDK) to enable FHE design automation for large-scale FHE circuits and (2) solution process-proven intellectual property blocks for TFT circuits design, including Pseudo-Complementary Metal-Oxide-Semiconductor (Pseudo-CMOS) flexible digital logic and analog amplifiers. The FHE-PDK is fully compatible with popular silicon design tools for design and simulation of hybrid-integrated flexible circuits.

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Large Area Electronics for Flat Panel Imagers Progress and Challenges

MRS Proceedings ◽

10.1557/proc-715-a4.1 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 2

Author(s):

J.P. Lu ◽

K. Van Schuylenbergh ◽

J. Ho ◽

Y. Wang ◽

J. B. Boyce ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Laser Annealing ◽

Thin Film Transistor ◽

Large Area ◽

Flat Panel ◽

Excimer Laser Annealing ◽

And Performance ◽

Flat Panel Imagers ◽

Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

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High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

Journal of Physics Conference Series ◽

10.1088/1742-6596/2152/1/012008 ◽

2022 ◽

Vol 2152 (1) ◽

pp. 012008

Author(s):

Qian Chen

Keyword(s):

Thin Film ◽

High Performance ◽

Low Cost ◽

Thin Film Transistor ◽

Solution Process ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Future Design ◽

Different Temperatures ◽

P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

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Development of a highly controlled system for large-area, directional printing of quasi-1D nanomaterials

Microsystems & Nanoengineering ◽

10.1038/s41378-021-00314-6 ◽

2021 ◽

Vol 7 (1) ◽

Author(s):

Adamos Christou ◽

Fengyuan Liu ◽

Ravinder Dahiya

Keyword(s):

High Performance ◽

Large Scale ◽

Low Cost ◽

Large Area ◽

Sem Images ◽

Contact Printing ◽

Controlled System ◽

Printing System ◽

Sliding Distance ◽

Novel Design

AbstractPrinting is a promising method for the large-scale, high-throughput, and low-cost fabrication of electronics. Specifically, the contact printing approach shows great potential for realizing high-performance electronics with aligned quasi-1D materials. Despite being known for more than a decade, reports on a precisely controlled system to carry out contact printing are rare and printed nanowires (NWs) suffer from issues such as location-to-location and batch-to-batch variations. To address this problem, we present here a novel design for a tailor-made contact printing system with highly accurate control of printing parameters (applied force: 0–6 N ± 0.3%, sliding velocity: 0–200 mm/s, sliding distance: 0–100 mm) to enable the uniform printing of nanowires (NWs) aligned along 93% of the large printed area (1 cm2). The system employs self-leveling platforms to achieve optimal alignment between substrates, whereas the fully automated process minimizes human-induced variation. The printing dynamics of the developed system are explored on both rigid and flexible substrates. The uniformity in printing is carefully examined by a series of scanning electron microscopy (SEM) images and by fabricating a 5 × 5 array of NW-based photodetectors. This work will pave the way for the future realization of highly uniform, large-area electronics based on printed NWs.

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A novel low cost roll-to-roll manufacturing compatible ultra-thin chip integration and direct metal interconnection process for flexible hybrid electronics

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2380-4491-2019-nor-palavesam ◽

2019 ◽

Vol 2019 (NOR) ◽

pp. 000006-000011

Author(s):

N Palavesam ◽

W Hell ◽

A Drost ◽

C Landesberger ◽

C Kutter ◽

...

Keyword(s):

Low Power ◽

Organic Electronics ◽

High Performance ◽

Low Cost ◽

Physical Object ◽

Successful Implementation ◽

Electrical Measurements ◽

Sensors And Actuators ◽

Human Machine Interaction ◽

Roll To Roll

Abstract The emerging Internet-of-Everything (IoE) framework aims to revolutionise human-machine interaction where billions of sensors and actuators placed on almost every physical object will be tasked to communicate with each other. A substantial fraction of these devices will be placed on locations that would undergo repeated bending deformation (such as sensors for prosthetics, human body and robots) or on curved surfaces (like interior as well as exterior of automobiles, buildings and industrial equipment). Therefore, flexible sensors and actuators delivering high performance at low power requirements and manufactured at low cost will be the key for successful implementation of IoE. Though massive developments achieved in printed and organic electronics have enabled them to fulfil the required flexibility and low cost demands of IoE applications, printed and organic electronics often fall short of the high performance and low power requirements demonstrated by silicon ICs. Flexible chip foil packages fabricated by integrating ultra-thin bare silicon ICs fulfil the aforementioned demands posed by IoE applications and therefore, they are often considered as potential enablers of IoE. Here, we present an innovative roll-to-roll manufacturing compatible low cost approach for direct metal interconnection and integration of ultra-thin silicon ICs. The thickness of the fabricated flexible packages with the integrated and interconnected ultra-thin ICs were as thin as 100 μm. Electrical measurements conducted on the 60 fabricated samples with interconnected flexible ultra-thin ICs revealed a very promising yield of 94%.

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Deterministic deployment of in-plane silicon nanowires for high performance large area electronics

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) ◽

10.1109/cicta.2018.8706060 ◽

2018 ◽

Author(s):

Han Yin ◽

Xiaoxiang Wu ◽

Jun Xu ◽

Kunji Chen ◽

Linwei Yu

Keyword(s):

Silicon Nanowires ◽

High Performance ◽

Large Area ◽

Large Area Electronics

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The Synthesis and Structures of Elpasolite Halide Scintillators

MRS Proceedings ◽

10.1557/proc-1164-l11-05 ◽

2009 ◽

Vol 1164 ◽

Cited By ~ 5

Author(s):

Pin Yang ◽

F. Patrick Doty ◽

Mark A. Rodriguez ◽

Margaret R. Sanchez ◽

Xiaowong Zhou ◽

...

Keyword(s):

Homeland Security ◽

High Performance ◽

Gamma Ray ◽

Low Cost ◽

Hot Forging ◽

Light Output ◽

Structural Variations ◽

Large Area ◽

Area Detector ◽

Cubic Materials

AbstractLow-cost, high-performance gamma-ray spectrometers are urgently needed for nonproliferation and homeland security applications. Available scintillation materials fall short of the requirements for energy resolution and sensitivity at room temperature. The emerging lanthanide halide based materials, while having the desired luminosity and proportionality, have proven difficult to produce in the large sizes and low cost required due to highly anisotropic properties caused by the non-cubic crystal structure. New cubic materials, such as the recently discovered elpasolite family (A2BLnX6; Ln-lanthanide and X-halogen), hold promise for scintillator materials due to their high light output, proportionality, and toughness. The isotropic nature of the cubic elpasolites leads to minimal thermomechanical stresses during single-crystal solidification, and eliminates the problematic light scattering at the grain boundaries. Therefore, it may be possible to produce these materials in large sizes as either single crystals or transparent ceramics with high production yield and reduced costs. In this study, we investigated the “cubic” elpasolite halide synthesis and studied the structural variations of four different compounds, including Cs2NaLaBr6, Cs2LiLaBr6, Cs2NaLaI6, and Cs2LiLaI6. Attempts to produce a large-area detector by a hot forging technique were explored.

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Triple-Mesoscopic Carbon Perovskite Solar Cells: Materials, Processing and Applications

Energies ◽

10.3390/en14020386 ◽

2021 ◽

Vol 14 (2) ◽

pp. 386

Author(s):

Simone M. P. Meroni ◽

Carys Worsley ◽

Dimitrios Raptis ◽

Trystan M. Watson

Keyword(s):

Solar Cells ◽

High Performance ◽

Low Cost ◽

Perovskite Solar Cells ◽

Future Research ◽

Large Area ◽

Long Term Stability ◽

Comparable Performance ◽

Indoor And Outdoor

Perovskite solar cells (PSCs) have already achieved comparable performance to industrially established silicon technologies. However, high performance and stability must be also be achieved at large area and low cost to be truly commercially viable. The fully printable triple-mesoscopic carbon perovskite solar cell (mCPSC) has demonstrated unprecedented stability and can be produced at low capital cost with inexpensive materials. These devices are inherently scalable, and large-area modules have already been fabricated using low-cost screen printing. As a uniquely stable, scalable and low-cost architecture, mCPSC research has advanced significantly in recent years. This review provides a detailed overview of advancements in the materials and processing of each individual stack layer as well as in-depth coverage of work on perovskite formulations, with the view of highlighting potential areas for future research. Long term stability studies will also be discussed, to emphasise the impressive achievements of mCPSCs for both indoor and outdoor applications.

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