Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE

1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Characterization of Zn0.96Al0.02Ga0.02O Thermoelectric Material

2013 ◽  
Vol 802 ◽  
pp. 227-231
Author(s):  
Panida Pilasuta ◽  
Pennapa Muthitamongkol ◽  
Chanchana Thanachayanont ◽  
Tosawat Seetawan
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Single Phase ◽  
Hexagonal Structure ◽  
Hexagonal Crystal Structure ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Transmission Electron

Crystal structure of Zn0.96Al0.02Ga0.02O was analyzed by X-Ray diffraction (XRD) technique and the microstructure was observed by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The XRD results showed single phase and hexagonal structure a = b = 3.24982 Å, and c = 5.20661 Å. The SEM and TEM results showed the grain size of material arrangement changed after sintering and TEM diffraction pattern confirmed hexagonal crystal structure of Zn0.96Al0.02Ga0.02O after sintering.

SYNTHESIS AND PIXE CHARACTERIZATION OF CuInSe2 AND CuIn3Se5

2006 ◽  
Vol 16 (01n02) ◽  
pp. 127-136
Author(s):  
P. MALAR ◽  
TAPASH RANJAN RAUTRAY ◽  
V. VIJAYAN ◽  
S. KASIVISWANATHAN
Keyword(s):  
Electron Microscopy ◽  
Single Phase ◽  
Compositional Analysis ◽  
X Ray Diffraction ◽  
Stoichiometric Mixture ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Studies ◽  
Constituent Elements

Polycrystalline ingots of CuInSe 2 and CuIn 3 Se 5 were synthesized by melt-quench technique starting from the stoichiometric mixture of constituent elements. X-ray Diffraction (XRD) studies confirmed the single-phase nature of the materials. Compositional analysis by Particle Induced X-ray Emission (PIXE) showed that the compounds are near stoichiometric. Thin films of CuInSe 2 and CuIn 3 Se 5 were grown from pre-synthesized CuInSe 2 and CuIn 3 Se 5 powders. The films were polycrystalline, single-phase and near stoichiometric in nature, as indicated by Transmission Electron Microscopy (TEM) and PIXE studies.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

scholarly journals Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2236
Author(s):  
Arántzazu Núñez-Cascajero ◽  
Fernando B. Naranjo ◽  
María de la Mata ◽  
Sergio I. Molina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

Preparation and Characterization of Al-Mg-B Thin Films by Magnetron Sputtering

2012 ◽  
Vol 465 ◽  
pp. 112-117 ◽  
Author(s):  
Wen Liu ◽  
Qing Sen Meng ◽  
Yang Miao ◽  
Feng Hua Chen ◽  
Li Fang Hu
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Space Applications ◽  
X Ray ◽  
Atomic Force ◽  
Sputtering Power ◽  
Target Power

Hard and superlight thin films laminated with boron carbide have been proposed as candidates for strategic use such as armor materials in military and space applications. We prepared Al-Mg-B films by sputter deposition on Si (100) substrates with one AlMgB14 target. The films were characterized by X-ray diffraction, atomic force microscope, GD-OES spectroscopy. The results show that films of AlMgB with different compositions have been deposited by changing the target power and deposition temperature.The influences of substrate temperature and sputtering power on the quality of the films are discussed.

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