High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

2006 ◽  
Vol 911 ◽  
Author(s):  
Francesco La Via ◽  
Giuseppa Galvagno ◽  
Andrea Firrincieli ◽  
Salvatore Di Franco ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electrical Characterization ◽  
High Growth ◽  
High Growth Rate ◽  
Rate Process ◽  
Power Devices ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Parameters ◽  
Horizontal Reactor

AbstractThe growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

Very High Growth Rate Epitaxy Processes with Chlorine Addition

2007 ◽  
Vol 556-557 ◽  
pp. 157-160 ◽  
Author(s):  
Francesco La Via ◽  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

A high growth rate process of ALD CeOx with amidinato-cerium [(N-iPr-AMD)3Ce] and O3 as precursors

2020 ◽  
Vol 55 (13) ◽  
pp. 5378-5389
Author(s):  
Liyong Du ◽  
Keyan Wang ◽  
Yinpeng Zhong ◽  
Bing Liu ◽  
Xinfang Liu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Rate Process

High growth rate process in a SiC horizontal CVD reactor using HCl

2006 ◽  
Vol 83 (1) ◽  
pp. 48-50 ◽  
Author(s):  
F. La Via ◽  
G. Galvagno ◽  
F. Roccaforte ◽  
F. Giannazzo ◽  
S. Di Franco ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Rate Process

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

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