Studies of Interfacial Optical and Electrical Properties on Transparent Dielectrics/ZnO Systems

2006 ◽  
Vol 928 ◽  
Author(s):  
Ran Shi Wang ◽  
Jin An ◽  
H.C. Ong
Keyword(s):  
Electrical Properties ◽  
Deep Level ◽  
Surface Recombination ◽  
High Mobility ◽  
Optical Measurements ◽  
Band Edge Emission ◽  
Optical And Electrical Properties ◽  
Conducting Oxides ◽  
Root Cause ◽  
Transparent Dielectrics

ABSTRACTTransparent conducting oxides (TCOs) have recently attracted considerable attention due to their potential in making "invisible electronic circuits". Among different TCOs, ZnO is probably one of the most promising candidates due to its desirable optical and electrical properties. In the transistor, metal and metal-dielectric in general are used as the gate on the active channel layer to control the flow of carriers. In order to obtain high mobility, the interface between the gate and ZnO must be well controlled so that the unwanted surface recombination can be minimized. Although studies of metal/ZnO have been well documented, only a few are seen on metal/dielectric/ZnO. Here, we report a systematic study on AlOx/ZnO and MgOx/ZnO interfaces for the potential use on transistor. From previous optical measurements, both the photoluminescence (PL) and cathodoluminescence (CL) show that the cap layers improves the emission characteristics of ZnO by enhancing the band-edge emission while at the same time reducing the unwanted deep-level emissions [K.C. Hui, H.C. Ong, P.F. Lee, J.Y. Dai, Appl. Phys. Lett. 86, 152116 (2005)]. On the contrary, in this study, we find post-thermal annealing of AlOx/ZnO and MgOx/ZnO gradually degrades the emission as well as charge transport properties, which indicates defects evolve upon annealing. By using secondary ion mass spectroscopy (SIMS), we elucidate out-diffusion of Zn into the oxide layer is the root cause of degrading the optical and electrical properties of oxide/ZnO.

Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films

2021 ◽  
Author(s):  
Yangmei Xin ◽  
Dong Zhang ◽  
Zizhan Li ◽  
Hua Qin ◽  
Junshan Xiu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Mobility ◽  
Optical And Electrical Properties ◽  
Low Resistivity

The MOVPE method is applied to deposit the (Al0.55In0.45)2O3:Sn films with high mobility as well as low resistivity.

Properties and Perspectives of Semiconducting Transition Metal silicides

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Lange
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Optical Measurements ◽  
Optical And Electrical Properties ◽  
Transport Parameters ◽  
Gap Energy ◽  
Metal Silicides ◽  
Main Emphasis ◽  
Characteristic Features ◽  
Semiconducting Silicides

AbstractThe structural, electronic, optical, and electrical properties of semiconducting silicides with transition metals from the VIth to the Vlllth Group of the Periodic Table are reviewed. Main emphasis is put on ß-FeSi2. The review includes recent results on optical measurements from the infrared up to 24 eV. Typical similarities in the phonon and interband spectra are outlined. Gap energy determinations are critically discussed. Doping impurities are characterized by EPR. Electrical investigations revealed characteristic features of transport parameters depending on temperature and magnetic field. Possible fields of application are analyzed.

Properties of Cu in GaAs

1990 ◽  
Vol 209 ◽  
Author(s):  
Rosa Leon ◽  
Maria Kaminska ◽  
Kin Man Yu ◽  
Eicke Weber
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Copper Concentration ◽  
Deep Level ◽  
Optical Measurements ◽  
X Ray ◽  
Total Copper ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
Comprehensive Study

ABSTRACT:The electrical properties and preferred lattice sites of Cu in GaAs were studied combining electrical and optical measurements with Particle Induced X-ray Emission (PIXE) and Channeling. For electronic characterization, Deep Level Transient Spectroscopy (DLTS), Hall Effect measurements, and Photoluminescence (PL) were used. From this comprehensive study it was determined that Cu introduces two levels in the bandgap, that the concentration of electrically active copper is considerably smaller than the total copper concentration, and that most of the Cu in GaAs is not of purely substitutional character.

EFFECT OF POTASSIUM CYANIDE ETCHING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2ZnSnS4 THIN FILMS DEPOSITED BY A MODIFIED SPRAY PROCESS

2019 ◽  
Vol 26 (09) ◽  
pp. 1950053
Author(s):  
SAMIRA BOUZIDA ◽  
EL BACHIR BENAMAR ◽  
MANALE BATTAS ◽  
GUY SCHMERBER ◽  
ZOUHEIR SEKKAT ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Potassium Cyanide ◽  
Chemical Vapor ◽  
Secondary Phase ◽  
Deposition Process ◽  
Optical Measurements ◽  
Optical And Electrical Properties ◽  
Spray Process ◽  
Before And After

We report the effect of potassium cyanide etching treatment on structural, optical and electrical properties of Cu2ZnSnS4 thin films prepared by a spray-assisted chemical vapor deposition process. Raman spectroscopy and X-ray diffraction measurements before and after potassium cyanide etching have confirmed the kesterite structure of Cu2ZnSnS4 films. Potassium cyanide treatment led to the elimination of [Formula: see text]S secondary phase. Optical measurements showed that the band gap value was about 1.52[Formula: see text]eV. The best electrical resistivity and Hall mobility values were reached for a deposition temperature of 450∘C in both cases without and with potassium cyanide treatment.

Mbe Growth and Characterization of Lwir HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M.B. Lee ◽  
J. Decarlo ◽  
D. Dimarzio ◽  
M. Kesselman
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam ◽  
High Mobility ◽  
Optical And Electrical Properties ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Hall Effect Measurements ◽  
Exafs Study

ABSTRACTWe have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements. For films of 10 to 11 µm thick and composition X value ranging from 0.152 to 0.172, the highest mobility observed was 7.5 × 105 cm2 /V-sec, and the FWHMs of the rocking curves were 75 to 110 arcsec. We also have carried out the temperature-dependent EXAFS study of HgCdTe.

Optical and Electrical Properties of Organic Conducting Polymers

2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon
Keyword(s):  
Electrical Properties ◽  
Conjugated Polymer ◽  
Polymeric Materials ◽  
Quantum Mechanical ◽  
Optical And Electrical Properties ◽  
Electrically Conducting ◽  
Temperature Ranges ◽  
Lithium Tetrafluoroborate ◽  
Absorbance Peak ◽  
Polymerization Method

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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