EFFECT OF POTASSIUM CYANIDE ETCHING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2ZnSnS4 THIN FILMS DEPOSITED BY A MODIFIED SPRAY PROCESS
Keyword(s):
We report the effect of potassium cyanide etching treatment on structural, optical and electrical properties of Cu2ZnSnS4 thin films prepared by a spray-assisted chemical vapor deposition process. Raman spectroscopy and X-ray diffraction measurements before and after potassium cyanide etching have confirmed the kesterite structure of Cu2ZnSnS4 films. Potassium cyanide treatment led to the elimination of [Formula: see text]S secondary phase. Optical measurements showed that the band gap value was about 1.52[Formula: see text]eV. The best electrical resistivity and Hall mobility values were reached for a deposition temperature of 450∘C in both cases without and with potassium cyanide treatment.
2018 ◽
Vol 6
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pp. 1801540
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2001 ◽
Vol 85
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pp. 131-134
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2002 ◽
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pp. 153-167
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2008 ◽
Vol 23
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pp. 755-759
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