EFFECT OF POTASSIUM CYANIDE ETCHING ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2ZnSnS4 THIN FILMS DEPOSITED BY A MODIFIED SPRAY PROCESS

2019 ◽  
Vol 26 (09) ◽  
pp. 1950053
Author(s):  
SAMIRA BOUZIDA ◽  
EL BACHIR BENAMAR ◽  
MANALE BATTAS ◽  
GUY SCHMERBER ◽  
ZOUHEIR SEKKAT ◽  
...  

We report the effect of potassium cyanide etching treatment on structural, optical and electrical properties of Cu2ZnSnS4 thin films prepared by a spray-assisted chemical vapor deposition process. Raman spectroscopy and X-ray diffraction measurements before and after potassium cyanide etching have confirmed the kesterite structure of Cu2ZnSnS4 films. Potassium cyanide treatment led to the elimination of [Formula: see text]S secondary phase. Optical measurements showed that the band gap value was about 1.52[Formula: see text]eV. The best electrical resistivity and Hall mobility values were reached for a deposition temperature of 450∘C in both cases without and with potassium cyanide treatment.

2017 ◽  
Vol 638 ◽  
pp. 22-27 ◽  
Author(s):  
A. Heiras-Trevizo ◽  
P. Amézaga-Madrid ◽  
L. Corral-Bustamante ◽  
W. Antúnez-Flores ◽  
P. Pizá Ruiz ◽  
...  

2021 ◽  
Vol 406 ◽  
pp. 285-291
Author(s):  
Abdallah Diha ◽  
Lahcene Fellah ◽  
Said Benramache ◽  
Okba Belahssen

Zinc oxide codoped with Fluorine and Cobalt thin films (FCZO) were successfully synthesized on heated glass substrate at 380 °C by spray pyrolysis technique. The influence of doping and codoping on the structural, optical and electrical properties were investigated. X-ray diffraction results showed that the undoped and FCZO films exhibit the hexagonal wurtzite crystal structure with a preferential orientation along [0 0 2] direction. No secondary phase is observed in FCZO films. The optical transmittance of Co doped ZnO thin films reduces up to 80 % as compared to undoped ZnO thin film in the visible region. We have observed three absorption bands at 568, 608 and 659 nm which can be attributed to the d-d transitions of tetrahedrally coordinated Co2+ ion in the high spin state. The band gap was found to be increasing in the range of 3.26-3.39 eV with Co doping whereas it decreases for higher doping of Co concentration.


2008 ◽  
Vol 23 (3) ◽  
pp. 755-759 ◽  
Author(s):  
Abbas Hodroj ◽  
Odette Chaix-Pluchery ◽  
Marc Audier ◽  
Ulrich Gottlieb ◽  
Jean-Luc Deschanvres

Ti–Si–O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analyzed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain x-ray amorphous after annealing, whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well-crystallized anatase TiO2. Crystallization of anatase TiO2 is also clearly shown in the Raman spectra. Transmission electron microscopy analysis indicates that anatase TiO2 nanograins are embedded in a SiO2 matrix in an alternated SiO2/TiO2 multilayer structure.


2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.


Sign in / Sign up

Export Citation Format

Share Document