Amorphization of Silicon by Ion Irradiation: The Role of the Divacancy

1988 ◽  
Vol 100 ◽  
Author(s):  
R. G. Elliman ◽  
J. Linnros ◽  
W. L. Brown
Keyword(s):  
Activation Energy ◽  
Ion Irradiation ◽  
Amorphous Layer ◽  
Irradiation Temperature ◽  
Defect Production ◽  
Critical Flux ◽  
Defect Annealing ◽  
The Stability ◽  
Arrhenius Expression

ABSTRACTFixed fluence ion irradiation of silicon is shown to produce either defected crystal or amorphous silicon depending on the ion flux employed. The amorphous threshold flux, defined as the minimum flux required to generate a continuous amorphous layer for a fixed fluence irradiation, is measured as a function of irradiation temperature. This critical flux for amorphization is shown to satisfy an Arrhenius expression with a unique activation energy of ∼1.2eV, which corresponds to the migration/dissociation energy of the silicon divacancy. These observations lead to the conclusion that the stability of the silicon divacancy controls the competition between defect production and dynamic defect annealing, and hence the crystalline to amorphous phase transformation.

Assessment of the Effect of Irradiation Temperature on the Mechanical Anisotropy of the Zr+ Ion Irradiated Zr-2.5%Nb

2011 ◽  
Vol 1298 ◽  
Author(s):  
Bipasha Bose ◽  
Robert J. Klassen
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Thermal Annealing ◽  
Ion Irradiation ◽  
Irradiation Temperature ◽  
Mechanical Anisotropy ◽  
Pressure Tube ◽  
Irradiation Damage ◽  
Creep Process ◽  
Indentation Creep

ABSTRACTWe present here new information on the effect of irradiation temperature on the strength and mechanical anisotropy of Zr-2.5%Nb CANDU pressure tube material. Polished samples aligned normal to the transverse (TN), axial (AN) and radial (RN) directions of the pressure tube were irradiated at 300°C with 8.5 MeV Zr+ ions to assess the effect of concurrent thermal annealing of the irradiation damage. Constant-load micro-indentation creep tests were performed at 25°C at indentation depths from 0.1 to 2.0 μm on the ion irradiated samples.The increase in the initial indentation stress with increasing levels of Zr+ ion irradiation at 300°C was lower than that reported earlier for similar samples exposed to Zr+ irradiation at 25°C. While the anisotropy of the indentation stress decreased significantly with Zr+ ion irradiation, the level of the decrease was reduced when the irradiation was performed at 300oC compared to 25oC. The apparent activation energy ΔG0 of the obstacles that limit the rate of dislocation glide during indentation creep did not change with indentation direction but did increase with increasing levels of Zr+ ion damage. The values of ΔG0 were, again, lower for samples that were irradiated at 300°C than for those irradiated at 25oC.The observed differences in the magnitude of, and the anisotropy of, the initial indentation stress and also the decrease in the apparent activation energy of the indentation creep process of Zr-2.5%Nb samples irradiated with Zr+ ions at 300oC compared to those irradiated at 25oC indicate the effect that concurrent thermal annealing has on the accumulation of irradiation damage. The effect of irradiation temperature on reducing the degree of, and the strength of, irradiation induced crystallographic damage must therefore be considered when predicting the strength and thermal creep behaviour of irradiated nuclear materials.

The Competition between Ion Beam Induced Epitaxial Crystallization and Amorphization in Silicon: The Role of the Divacancy

1986 ◽  
Vol 74 ◽  
Author(s):  
J. Linnros ◽  
R. G. Elliman ◽  
W. L. Brown
Keyword(s):  
Activation Energy ◽  
Dose Rate ◽  
Dynamic Equilibrium ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Linear Displacement ◽  
Epitaxial Crystallization ◽  
Critical Dose ◽  
Ion Species

AbstractThe transition from ion induced epitaxial crystallization to planar amorphization of a preexisting amorphous layer in silicon has been investigated. The conditions for dynamic equilibrium at the transition were determined for different ion species as a function of dose rate and temperature. The critical dose rate for equilibrium varies exponentially with 1/T, exhibiting an activation energy of ∼1.2 eV. Furthermore, for different ions, the critical dose rate is inversely proportional to the square of the linear displacement density created by individual ions. This second order defect production process and the activation energy, which is characteristic of divacancy dissociation, suggest that the accumulation of divacancies at the amorphous/crystalline interface controls the balance between crystallization and amorphization.

Solid-Phase Epitaxy - Role of Point Defects in Amorphous Solids

1993 ◽  
Vol 319 ◽  
Author(s):  
T.K. Chaki
Keyword(s):  
Epitaxial Growth ◽  
Point Defects ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Amorphous Solid ◽  
Amorphous Layer ◽  
Amorphous Solids ◽  
Solid Phase Epitaxy ◽  
Self Diffusion

AbstractA model of solid-phase epitaxial growth (SPEG), explaining enhancing effects of ion-irradiation and dopants, is presented. The crystallization is by the adjustment of atomic positions in the amorphous side of the crystalline/amorphous (c-a) interface due to self-diffusion in the amorphous solid, assisted by a freeenergy decrease associated with the transformation from the amorphous (a) to crystalline (c) phase. Irradiation and electrically active dopants increase the selfdiffusivity of a-phase by generating point defects in the amorphous layer and thus enhance crystallization. An expression for the velocity of epitaxial growth is derived. The low activation energy of ion-induced SPEG is due to recombination of point defects in the a-phase.

Metastable Alloy Formation By Ion Beam Mixing

1985 ◽  
Vol 51 ◽  
Author(s):  
F.W. Saris ◽  
J.F.M. Westendorp ◽  
A. Vredenberg
Keyword(s):  
Electron Beams ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Alloy Formation ◽  
Vacuum Deposition ◽  
Ion Beam Mixing ◽  
The Stability ◽  
Further Development ◽  
Metastable Alloy

ABSTRACTIn Ion Beam Mixing new surface alloys are produced by a combination of vacuum deposition and ion irradiation. One may wonder what the advantages are of this combination. Indeed one may ask:- Why not just ion implantation?- Why ion beams instead of laser or electron beams?- Why ion mixing instead of evaporation only?- What phases are formed and what is the stability of ion mixed phases?In an attempt to answer these questions the role of ion beam mixing in modern materials modification will de delineated. Areas of controversy and further development will also be illustrated.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

A Statistical Study of Process Variables to Optimize a High Speed Curtain Coater: Part I

TAPPI Journal ◽  
2009 ◽  
Vol 8 (1) ◽  
pp. 20-26 ◽  
Author(s):  
PEEYUSH TRIPATHI ◽  
MARGARET JOYCE ◽  
PAUL D. FLEMING ◽  
MASAHIRO SUGIHARA
Keyword(s):  
Boundary Layer ◽  
Experimental Design ◽  
High Speed ◽  
Statistical Study ◽  
Process Variables ◽  
High Speeds ◽  
The Stability ◽  
Air Removal ◽  
Removal System

Using an experimental design approach, researchers altered process parameters and material prop-erties to stabilize the curtain of a pilot curtain coater at high speeds. Part I of this paper identifies the four significant variables that influence curtain stability. The boundary layer air removal system was critical to the stability of the curtain and base sheet roughness was found to be very important. A shear thinning coating rheology and higher curtain heights improved the curtain stability at high speeds. The sizing of the base sheet affected coverage and cur-tain stability because of its effect on base sheet wettability. The role of surfactant was inconclusive. Part II of this paper will report on further optimization of curtain stability with these four variables using a D-optimal partial-facto-rial design.

The Role of Hydrophobicity in the Stability and pH-Switchability of (RXDX)4 and Coumarin-RXDX Conjugate β-Sheets

2020 ◽  
Author(s):  
Ryan Weber ◽  
Martin McCullagh
Keyword(s):  
Biological Imaging ◽  
Ph Sensing ◽  
Hydrophobic Residue ◽  
Ideal Candidate ◽  
Self Assembling ◽  
Sensing Applications ◽  
Β Sheets ◽  
The Stability ◽  
Dynamics Simulations

<p>pH-switchable, self-assembling materials are of interest in biological imaging and sensing applications. Here we propose that combining the pH-switchability of RXDX (X=Ala, Val, Leu, Ile, Phe) peptides and the optical properties of coumarin creates an ideal candidate for these materials. This suggestion is tested with a thorough set of all-atom molecular dynamics simulations. We first investigate the dependence of pH-switchabiliy on the identity of the hydrophobic residue, X, in the bare (RXDX)<sub>4</sub> systems. Increasing the hydrophobicity stabilizes the fiber which, in turn, reduces the pH-switchabilty of the system. This behavior is found to be somewhat transferable to systems in which a single hydrophobic residue is replaced with a coumarin containing amino acid. In this case, conjugates with X=Ala are found to be unstable and both pHs while conjugates with X=Val, Leu, Ile and Phe are found to form stable β-sheets at least at neutral pH. The (RFDF)<sub>4</sub>-coumarin conjugate is found to have the largest relative entropy value of 0.884 +/- 0.001 between neutral and acidic coumarin ordering distributions. Thus, we posit that coumarin-(RFDF)<sub>4</sub> containing peptide sequences are ideal candidates for pH-sensing bioelectronic materials.</p>

Metal-Metal Cooperative Bond Activation by Heterobimetallic Alkyl, Aryl, and Acetylide PtII/CuI Complexes

2020 ◽  
Author(s):  
Shubham Deolka ◽  
Orestes Rivada Wheelaghan ◽  
Sandra Aristizábal ◽  
Robert Fayzullin ◽  
Shrinwantu Pal ◽  
...  
Keyword(s):  
Alkyl Group ◽  
Bond Activation ◽  
Bond Cleavage ◽  
Terminal Alkyne ◽  
Alkyl Aryl ◽  
Metal Metal ◽  
The Stability ◽  
Selective Formation ◽  
Organoplatinum Compounds

We report selective formation of heterobimetallic PtII/CuI complexes that demonstrate how facile bond activation processes can be achieved by altering reactivity of common organoplatinum compounds through their interaction with another metal center. The interaction of the Cu center with Pt center and with a Pt-bound alkyl group increases the stability of PtMe2 towards undesired rollover cyclometalation. The presence of the CuI center also enables facile transmetalation from electron-deficient tetraarylborate [B(ArF)4]- anion and mild C-H bond cleavage of a terminal alkyne, which was not observed in the absence of an electrophilic Cu center. The DFT study indicates that the role of Cu center acts as a binding site for alkyne substrate, while activating its terminal C-H bond.

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