Atomic Precision Device Fabrication Using Cyclic Self-Limiting Plasma Processes: Involving Silicon, Silicon Nitride, and Silicon Dioxide

ABSTRACTThe localized laser-induced deposition of an insulator for silicon-based microelectronics seems to be an unsolved problem. In order to understand the limiting mechanism in the deposition, the formation kinetics of silicon, silicon oxide and silicon nitride using various laser wavelengths and gas mixtures have been studied Depending upon wavelength and laser-induced temperature, various chemical reactions are involved. In the presence of ammonia, the growth rate of silicon nitride dots was found to be lower than the corresponding silicon deposition rate, indicating that deposition starts with silane decomposition followed by nitridation of silicon. By evaluating the influence of the wavelengths, the existence of a photolytic aided reaction is detected in the presence of 2.4 eV photons. In the presence of oxygen molecules and under most experimental conditions, no deposition occurs. The formation of volatile intermediate compounds can explain the difficulty of locally depositing silicon dioxide.

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Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1626642 ◽

2004 ◽

Vol 22 (1) ◽

pp. 53-60 ◽

Cited By ~ 167

Author(s):

T. E. F. M. Standaert ◽

C. Hedlund ◽

E. A. Joseph ◽

G. S. Oehrlein ◽

T. J. Dalton

Keyword(s):

Silicon Carbide ◽

Silicon Nitride ◽

Silicon Dioxide ◽

Film Formation ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Silicon Silicon ◽

Fluorocarbon Film

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Rapid plasma etching of silicon, silicon dioxide and silicon nitride using microwave discharges

Semiconductor Science and Technology ◽

10.1088/0268-1242/8/4/019 ◽

1993 ◽

Vol 8 (4) ◽

pp. 599-604 ◽

Cited By ~ 6

Author(s):

S K Ray ◽

C K Maiti ◽

N B Chakraborti

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Plasma Etching ◽

Microwave Discharges ◽

Silicon Silicon

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Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.11.1251 ◽

1972 ◽

Vol 11 (9) ◽

pp. 1251-1258 ◽

Cited By ~ 6

Author(s):

Masahiro Maekawa

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Polycrystalline Silicon ◽

Silicon Structures ◽

Silicon Silicon

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ChemInform Abstract: FORMATION OF SILICON NITRIDE AT A SILICON-SILICON DIOXIDE INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN AMMONIA GAS

Chemischer Informationsdienst ◽

10.1002/chin.197643005 ◽

1976 ◽

Vol 7 (43) ◽

pp. no-no

Author(s):

E. KOOI ◽

J. G. VAN LIEROP ◽

J. A. APPELS

Keyword(s):

Heat Treatment ◽

Silicon Nitride ◽

Silicon Dioxide ◽

Ammonia Gas ◽

Local Oxidation ◽

Silicon Silicon ◽

Silicon Silicon Dioxide Interface

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Influence of Multilayer Design and Post-Deposition Processing on Effective Photonic Properties of Silicon/Silicon Nitride Multilayer Structures

2020 22nd International Conference on Transparent Optical Networks (ICTON) ◽

10.1109/icton51198.2020.9203498 ◽

2020 ◽

Author(s):

Jarmila Mullerova ◽

Pavel Sutta ◽

Pavel Calta ◽

Rostislav Medlin ◽

Marie Netrvalova

Keyword(s):

Silicon Nitride ◽

Multilayer Structures ◽

Multilayer Design ◽

Silicon Silicon ◽

Post Deposition

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Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽

10.3390/mi12020136 ◽

2021 ◽

Vol 12 (2) ◽

pp. 136

Author(s):

Yiingqi Shang ◽

Hongquan Zhang ◽

Yan Zhang

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Chemical Vapor ◽

Nitride Layer ◽

Wet Etching ◽

Silicon Dioxide Layer ◽

Etching Depth ◽

Deep Cavity ◽

Mask Layer ◽

Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

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