Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

1972 ◽  
Vol 11 (9) ◽  
pp. 1251-1258 ◽  
Author(s):  
Masahiro Maekawa
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Polycrystalline Silicon ◽  
Silicon Structures ◽  
Silicon Silicon

Localized Laser-Assisted Deposition of Silicon,Silicon Nitride and Silicon Dioxide

1987 ◽  
Vol 101 ◽  
Author(s):  
Geoffrey Auvert ◽  
Yves Pauleau ◽  
Didier Tonneau
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Oxide ◽  
Unsolved Problem ◽  
Experimental Conditions ◽  
Formation Kinetics ◽  
Silicon Based ◽  
Kinetics Of ◽  
Silicon Silicon

ABSTRACTThe localized laser-induced deposition of an insulator for silicon-based microelectronics seems to be an unsolved problem. In order to understand the limiting mechanism in the deposition, the formation kinetics of silicon, silicon oxide and silicon nitride using various laser wavelengths and gas mixtures have been studied Depending upon wavelength and laser-induced temperature, various chemical reactions are involved. In the presence of ammonia, the growth rate of silicon nitride dots was found to be lower than the corresponding silicon deposition rate, indicating that deposition starts with silane decomposition followed by nitridation of silicon. By evaluating the influence of the wavelengths, the existence of a photolytic aided reaction is detected in the presence of 2.4 eV photons. In the presence of oxygen molecules and under most experimental conditions, no deposition occurs. The formation of volatile intermediate compounds can explain the difficulty of locally depositing silicon dioxide.

Limited Reaction Processing of Silicon: Oxidation and Epitaxy

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Gronet ◽  
J. C. Sturm ◽  
K. E. Williams ◽  
J. F. Gibbons
Keyword(s):  
Silicon Dioxide ◽  
Polycrystalline Silicon ◽  
Electrical Characteristics ◽  
Epitaxial Silicon ◽  
High Quality ◽  
Silicon Oxidation ◽  
Reaction Processing ◽  
Silicon Silicon

ABSTRACTLimited reaction processing has been used to grow thin, high quality layers of epitaxial silicon, silicon dioxide, and polycrystalline silicon. Multiple layers of these materials were deposited in – situ to demonstrate control of layer thicknesses, interface transition regions, and interface cleanliness. MOS and p-n junction structures were fabricated which exhibit electrical characteristics comparable to those of devices produced by conventional techniques.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

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