INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1725-1728 ◽  
Author(s):  
ERICK M. LARRAMENDI ◽  
EDGAR LÓPEZ-LUNA ◽  
OSVALDO DE MELO ◽  
ISAAC HERNÁNDEZ-CALDERÓN
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
High Energy ◽  
Atomic Layer Epitaxy ◽  
Temporal Behavior ◽  
High Energy Electron ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Znte Film ◽  
Cdte Surface

Layers of 6 and 16 Cd–Te–Zn–Te periods were grown by atomic layer epitaxy (ALE) within ZnTe thin films. Different samples were grown at substrate temperatures of 260 and 290°C. Information about the kinetics of growth and surface reconstruction during the ALE growth of CdTe and ZnTe films, and Cd–Te–Zn–Te periods was obtained by means of reflection high-energy electron diffraction (RHEED) experiments and through the analysis of the temporal behavior of the intensities of several features of the RHEED patterns. The photoluminescence of the sample grown at 260°C presents two narrow and intense peaks corresponding to emission from quantum wells (QWs). However, the spectrum of the samples grown at 290°C does not show any feature associated with QWs, the spectrum resembling that of a ZnTe film. Cd replacement by Zn atoms explains the absence of the CdZnTe QWs at 290°C and a lower Cd content than expected at 260°C. The replacement of Cd atoms by Zn atoms in the CdTe surface was clearly demonstrated by Auger experiments.

Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAs

1989 ◽  
Vol 145 ◽  
Author(s):  
T.H. Chiu
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
High Energy ◽  
Reaction Model ◽  
Atomic Layer Epitaxy ◽  
Dynamic Evolution ◽  
High Energy Electron ◽  
Incident Flux ◽  
Kinetics Of

AbstractRecent efforts employing reflection high energy electron diffiaction measurements to study the chemical beam epitaxial growth of GaAs is reviewed. A reaction model which assumes the dominance of Ga alkyls and their derivatives adsorbed on the growing surface can explain most of the growth results in a consistent way. Dynamic evolution of the reconstruction pattern of the adsorbed triethylgallium or trimethylgallium overlayer illustrates how the alkyl-Ga bonds are cleaved sequentially. The growth rate dependence on temperature and incident flux can be fitted quite well in this reaction model. In the absence of As flux, the existence of a metastable Ga alkyl overlayer makes possible the atomic layer epitaxy of GaAs.

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

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