Influence of Oxygen and Boron on Defect Production in Irradiated Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
P. J. Drevinsky ◽  
C. E. Caefer ◽  
S. P. Tobin ◽  
J. C. Mikkelsen ◽  
L. C. Kimerling
Keyword(s):  
Carbon Content ◽  
Oxygen Content ◽  
Boron Concentration ◽  
Electron Trap ◽  
Hole Trap ◽  
Defect Production ◽  
Interstitial Defects ◽  
Defect Reactions ◽  
P Type ◽  
Initial Results

ABSTRACTIntroduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 × 1015 to 7 × 1017 cm−3. Initial results are described for samples with measured carbon content varying from 2 × 1015 to 6 × 1016 cm−3. Competing defect reactions involving the interstitial defects, Bi and Ci, and oxygen, boron, and carbon are observed. The identities of an electron trap (Bi-Oi) and a hole trap (Bi-Bs) have been clarified.

scholarly journals INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON

2018 ◽  
Vol 54 (2) ◽  
pp. 220-228
Author(s):  
L. F. Makarenko ◽  
S. B. Lastovskii ◽  
E. Gaubas ◽  
Je. A. Pavlov ◽  
M. Moll ◽  
...  
Keyword(s):  
Current Density ◽  
Room Temperature ◽  
Correlation Energy ◽  
Defect Density ◽  
Deep Level ◽  
Electron Trap ◽  
Interstitial Oxygen ◽  
Hole Trap ◽  
Type Silicon ◽  
P Type

With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by irradiation of epitaxial boron-doped n+–p diode structures with alpha-particles at room temperature. It has been shown that the disappearance of this complex at room temperature begins at a direct current density of ~1.5 A/cm2. This characteristic current density has been found for 10 W·cm p-type silicon when the total radiation defect density was less than 15 % of the initial boron concentration, a divalent hole trap with energy levels of Ev + 0.43 eV and Ev + 0.54 eV has been found to appear as a result of recombination-enhanced annealing of the I2O. When the I2O complex is annealed thermally, the concurrent appearance of an electron trap with an energy level of Ec – 0.35 eV has been observed. It has been shown that the divalent hole trap represents a metastable configuration (BH-configuration) of the bistable defect, whereas the electron trap is stab le in the p-Si configuration (ME-configuration). From the comparison of DLTS signals related to different defect configurations it is found that the ME-configuration of this bistable defect can be characterized as a center with negative correlation energy. It has been shown that the injection-stimulated processes make it very difficult to obtain reliable data on the formation kinetics of the bistable defect in the BH-configuration when studying the thermal annealing of the I2O complex.

scholarly journals Defect production in strained p-type Si1−xGex by Er implantation

2011 ◽  
Vol 109 (1) ◽  
pp. 013715 ◽  
Author(s):  
M. Mamor ◽  
B. Pipeleers ◽  
F. D. Auret ◽  
A. Vantomme
Keyword(s):  
Defect Production ◽  
P Type

Relationship between a nitrogen-related hole trap and ionized acceptors density in p-type GaAsN grown by chemical beam epitaxy

2010 ◽  
Vol 8 (2) ◽  
pp. 616-618 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

p-Type Co Interstitial Defects in Thermoelectric Skutterudite CoSb3 Due to the Breakage of Sb4-Rings

2016 ◽  
Vol 28 (7) ◽  
pp. 2172-2179 ◽  
Author(s):  
Guodong Li ◽  
Saurabh Bajaj ◽  
Umut Aydemir ◽  
Shiqiang Hao ◽  
Hai Xiao ◽  
...  
Keyword(s):  
Interstitial Defects ◽  
P Type

Defects Introduced by Plasma Processing of Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J. L. Benton
Keyword(s):  
Bulk Material ◽  
Surface Region ◽  
Surface Damage ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Interstitial Defect ◽  
Comprehensive Picture ◽  
Reaction Region ◽  
Defect Reactions ◽  
P Type

ABSTRACTThe electrical and optical properties of defects introduced by Reactive Ion Etching (RIE) in the near surface region of Si after dry etching with various gases and plasma conditions is studied with spreading Resistance (SR), photoluminescence (PL), and capacitance-voltage profiling (C-V). Plasma etching in chlorine and fluorine based gases produce donors at the surface in both n-type and p-type, Czochralski and float-zone silicon. Isochronal annealing reveals the presence of two distinct regions of dopant compensation. The surface damage region is confined to 1000 Å and survives heat treatment at 400°C, while the defect reaction region extends ≥ 1 μm in depth and recovers by 250°C. A comprehensive picture of the interstitial defect reactions in RIE silicon is completed. The interstitial defects, Ci and Bi, created in the ion damaged near surface region, undergo recombination enhanced diffusion caused by the presence of ultraviolet light in the plasma, resulting in the long range diffusion into the Si bulk. Subsequently, the interstitial atoms are trapped by the background impurities forming the defect pairs, CiOi, CSCi, or BiOi, which are observed experimentally. The depth of the diffusion-limited trapping and the probability of forming specific pairs depends on the relative concentrations of the reactants, oxygen, carbon or boron, present in the bulk material.

scholarly journals Effect of Nitrogen Cation as “Electron Trap” at π-Linker on Properties for p-Type Photosensitizers: DFT Study

Molecules ◽  
2019 ◽  
Vol 24 (17) ◽  
pp. 3134 ◽  
Author(s):  
Zhi-Dan Sun ◽  
Jiang-Shan Zhao ◽  
Xue-Hai Ju ◽  
Qi-Ying Xia
Keyword(s):  
Driving Force ◽  
Density Functional ◽  
Electron Trap ◽  
Hole Injection ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Td Dft ◽  
Harvesting Efficiency ◽  
Light Harvesting Efficiency ◽  
P Type

On the basis of thieno(3,2-b)thiophene and dithieno[3,2-b:2′,3′-d]thiophene (T2 and T3 moieties) as π-linker, the A, D and S series dyes were designed to investigate the effect of the introducing N+ as an “electron trap” into T2 and T3 on the properties of the dyes. The optimized structures, electronic and optical properties were investigated by the density functional theory (DFT) and time-dependent DFT (TD-DFT). The results show that the properties of the dyes are sensitive to the N+ position in π-linkers. D series dyes with electron-withdrawing units located near the donor have better properties than the corresponding A series with the electron-withdrawing units located near the acceptor. For A and D series, the N+ modified dye named T2N+1-d displays the largest red shift of the UV–vis absorption, the maximum integral values of the adsorption-wavelength curves over the visible light, the highest light harvesting efficiency (LHE, 0.996), and the strongest adsorption energy (−44.33 kcal/mol). T2N+1-d also has a large driving force of hole injection (ΔGinj, −0.74 eV), which results in a more efficient hole injection. Bearing a lengthier π-linker than T2N+1-d, the properties of T2N+1-s are further improved. T2N+1-d moiety or its increased conjugated derivatives may be a promising π-linker.

INFLUENCE OF OXYGEN IMPURITY ON SEEBECK COEFFICIENT OF NANOSCALE MnSi1.7 FILMS

2009 ◽  
Vol 23 (20n21) ◽  
pp. 2421-2427 ◽  
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Transition Temperature ◽  
Seebeck Coefficient ◽  
Thermal Annealing ◽  
Oxygen Content ◽  
Layer Structure ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Oxygen Impurity ◽  
P Type

Nano-scale MnSi 1.7 films are prepared by thermal annealing of three-layer Si / MnSi x/ Si or bi-layer Si / MnSi x (x < 1.7) structures at 923 K for 20–65 minutes. These layers are deposited on thermally oxidized silicon substrates at about 393 K by electron beam evaporation. It is found that the oxygen content in the MnSi 1.7 film can be reduced from about 10 at.% to 6 at.% by using the bi-layer structure MnSi x/ Si with the MnSi x layer on top. With the reduction of oxygen content in the MnSi 1.7 film, the transition temperature from p-type to n-type decreases from 508 K to 463 K or less.

Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals

2015 ◽  
Vol 821-823 ◽  
pp. 265-268 ◽  
Author(s):  
Ying Xin Cui ◽  
Xiao Bo Hu ◽  
Xian Gang Xu
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Single Crystals ◽  
High Purity ◽  
Room Temperature ◽  
Boron Concentration ◽  
Nitrogen Concentration ◽  
Infrared Transmission ◽  
Infrared Transmittance ◽  
P Type

Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.

Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

2013 ◽  
Vol 60 (2) ◽  
pp. 863-869 ◽  
Author(s):  
Takeshi Ishida ◽  
Toshiyuki Mine ◽  
Digh Hisamoto ◽  
Yasuhiro Shimamoto ◽  
Ren-ichi Yamada
Keyword(s):  
Metal Oxide ◽  
Electron Trap ◽  
Hole Trap ◽  
Silicon Structures ◽  
Nitride Oxide

Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

2011 ◽  
Vol 178-179 ◽  
pp. 392-397 ◽  
Author(s):  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
Bruce Hamilton ◽  
Valentin V. Litvinov ◽  
Yurii M. Pokotilo ◽  
...  
Keyword(s):  
Density Functional ◽  
Effective Interaction ◽  
Hole Trap ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
Impurity Atoms ◽  
Radiation Induced ◽  
Transient Capacitance ◽  
Defect Reactions ◽  
Induced Defects

We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich et al., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 °C have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh= 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tin-vacancy-phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge.

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