Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals
2015 ◽
Vol 821-823
◽
pp. 265-268
◽
Keyword(s):
Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI), high purity semi-insulating, n-type and p-type SiC wafers have been compared and assessed. The effect of nitrogen and boron concentration on the transmittance is discussed. In addition, the carrier concentrations in 4H-SiC wafers were measured by Raman spectroscopy at room temperature. The influence of nitrogen concentration on the transmittance is also discussed.
2005 ◽
Vol 483-485
◽
pp. 35-38
◽
2009 ◽
Vol 615-617
◽
pp. 19-22
◽
1980 ◽
Vol 31
(2)
◽
pp. 209-216
◽
Keyword(s):
1978 ◽
Vol 36
(1)
◽
pp. 594-595
Keyword(s):
1983 ◽
Vol 44
(C9)
◽
pp. C9-691-C9-696
◽