Investigation of Hydrogen Storage Using Combinatorial Thin Films and IR Imaging

2007 ◽  
Vol 1042 ◽  
Author(s):  
Hiroyuki Oguchi ◽  
Ichiro Takeuchi ◽  
Daniel Josell ◽  
Edwin J Heilweil ◽  
Leonid A Bendersky
Keyword(s):  
Thin Films ◽  
Hydrogen Absorption ◽  
Compositional Variation ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ir Camera ◽  
Deposition Chamber ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Deposition

AbstractThree 100 nm-thick Mgx(TM)1-x (TM = Ni and Ti) composition spread thin films having compositional variation 0.4<x<0.95 and capped with a 5 nm-thick Pd layer were deposited in combinatorial electron-beam (e-beam) deposition chamber. Crystallinity of the films was characterized by scanning x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Hydrogen absorption and desorption of the films were monitored with an infrared (IR) camera that could image a full area of the films. The observed changes in IR intensity due to hydrogen absorption/desorption demonstrated sensitivity of the method to the differences in compostion, microstructure and type of TM.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Structural characterization and thermal stability of W/Si multilayers

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Layer Thickness Ratio ◽  
Transmission Electron ◽  
Thermal Stability Of ◽  
Beam Deposition

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Structural Transitions in Titanium/Amorphous-Silicon Multilayers

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Ma ◽  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. DeAvillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Exothermic Reaction ◽  
Heat Of Formation ◽  
Structural Transitions ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

We report a quantitative investigation of silicidation in Ti/amorphous-Si thin-films using Differential Scanning Calorimetry (DSC), thin-film X-ray diffraction and Cross-sectional Transmission Electron Microscopy (XTEM). Multilayered thin films were used to facilitate calorimetric observation of the heat released or absorbed at many reacting interfaces. It is shown that calorimetric analysis, combined with structural analysis using X-ray diffraction and XTEM, is effective in providing both kinetic and thermodynamic information about interdiffusion reactions in thin films. The present paper describes experimental results for multilayers with an atomic concentration ratio of 1 Ti to 2 Si and modulation periods ranging from 10 to 60 nm. A thin amorphous titanium suicide layer was found to exist between the as-deposited Ti and a-Si layers. Heating the multilayer film caused the amorphous Ti-silicide to grow over a broad temperature range by an exothermic reaction. An endothermic relaxation occurs during the late stage of amorphous suicide growth. Heating to temperatures over 800K causes C49-TiSi2 to form at the a-si1icide/a-Si interface. Temperatures at which all the above structural transitions occur vary with modulation period. Analysis of the DSC data indicates an activation energy of 3.1 eV for the formation of C49-TiSio, which is attributed to both the nucleation and the early growth of the suicide. The heat of formation for C49-TiSi2 from a reaction of a-silicide and a-Si was found to be -30±5KJ/mol. Nucleation appears to be the controlling step in C49-TiSi2 formation.

Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
H. N. Lee ◽  
D. N. Zakharov ◽  
P. Reiche ◽  
R. Uecker ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Scanning Force Microscopy ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Integrated Intensity ◽  
Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

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