Structural Transitions in Titanium/Amorphous-Silicon Multilayers

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Ma ◽  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. DeAvillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Exothermic Reaction ◽  
Heat Of Formation ◽  
Structural Transitions ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Calorimetric Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

We report a quantitative investigation of silicidation in Ti/amorphous-Si thin-films using Differential Scanning Calorimetry (DSC), thin-film X-ray diffraction and Cross-sectional Transmission Electron Microscopy (XTEM). Multilayered thin films were used to facilitate calorimetric observation of the heat released or absorbed at many reacting interfaces. It is shown that calorimetric analysis, combined with structural analysis using X-ray diffraction and XTEM, is effective in providing both kinetic and thermodynamic information about interdiffusion reactions in thin films. The present paper describes experimental results for multilayers with an atomic concentration ratio of 1 Ti to 2 Si and modulation periods ranging from 10 to 60 nm. A thin amorphous titanium suicide layer was found to exist between the as-deposited Ti and a-Si layers. Heating the multilayer film caused the amorphous Ti-silicide to grow over a broad temperature range by an exothermic reaction. An endothermic relaxation occurs during the late stage of amorphous suicide growth. Heating to temperatures over 800K causes C49-TiSi2 to form at the a-si1icide/a-Si interface. Temperatures at which all the above structural transitions occur vary with modulation period. Analysis of the DSC data indicates an activation energy of 3.1 eV for the formation of C49-TiSio, which is attributed to both the nucleation and the early growth of the suicide. The heat of formation for C49-TiSi2 from a reaction of a-silicide and a-Si was found to be -30±5KJ/mol. Nucleation appears to be the controlling step in C49-TiSi2 formation.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Investigation of Hydrogen Storage Using Combinatorial Thin Films and IR Imaging

2007 ◽  
Vol 1042 ◽  
Author(s):  
Hiroyuki Oguchi ◽  
Ichiro Takeuchi ◽  
Daniel Josell ◽  
Edwin J Heilweil ◽  
Leonid A Bendersky
Keyword(s):  
Thin Films ◽  
Hydrogen Absorption ◽  
Compositional Variation ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ir Camera ◽  
Deposition Chamber ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Deposition

AbstractThree 100 nm-thick Mgx(TM)1-x (TM = Ni and Ti) composition spread thin films having compositional variation 0.4<x<0.95 and capped with a 5 nm-thick Pd layer were deposited in combinatorial electron-beam (e-beam) deposition chamber. Crystallinity of the films was characterized by scanning x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Hydrogen absorption and desorption of the films were monitored with an infrared (IR) camera that could image a full area of the films. The observed changes in IR intensity due to hydrogen absorption/desorption demonstrated sensitivity of the method to the differences in compostion, microstructure and type of TM.

Structure and Morphology of Epitaxially Intergrown (100)- and (116)-Oriented SrBi2Ta2O9 Ferroelectric Thin Films on SrLaGaO4(110) Substrates

2001 ◽  
Vol 688 ◽  
Author(s):  
H. N. Lee ◽  
D. N. Zakharov ◽  
P. Reiche ◽  
R. Uecker ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Scanning Force Microscopy ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Integrated Intensity ◽  
Scanning Force

AbstractSrBi2Ta2O9 (SBT) epitaxial thin films having a mix of (100) and (116) orientations have been grown on SrLaGaO4(110) by pulsed laser deposition. X-ray diffraction θ2 θ and pole figure scans, and cross-sectional transmission electron microscopy (TEM) analyses revealed the presence of two epitaxial orientations, SBT(100) ∥ SLG(110); SBT[001] ∥ SLG[001] and SBT(116) ∥ SLG(110); SBT [110] ∥ SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are best at a substrate temperature of 775 °C and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%. By scanning force microscopy and cross-sectional TEM investigations we found that the a-axisoriented grains are rounded and protrude out due to the rapid growth along the [110] direction, leading to a distinct difference of the surface morphology between (100)- and (116)-oriented grains.

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

Batch-foamed biodegradable polylactide acid/organic modified montmorillonite clays and polylactide/sericite powder nanocomposites

2012 ◽  
Vol 32 (2) ◽  
Author(s):  
Jin-Wei Chen ◽  
Jian-ling Liu
Keyword(s):  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Cross Sectional ◽  
X Ray ◽  
Mineral Particles ◽  
Foaming Process ◽  
Modified Montmorillonite ◽  
Transmission Electron ◽  
Montmorillonite Clays ◽  
Polylactide Acid

Abstract The properties of microcellular polylactic acid (PLA)/organic modified montmorillonite (OMMT) clays and PLA/sericite powder (SP) nanocomposites were investigated and compared in terms of thermal property, rheological property, particles dispersability, and cell microstructure. The batch-foaming process uses carbon dioxide as the physical blowing agent. According to the transmission electron microscopy and X-ray diffraction characterization, fillers (i.e., OMMT and SP) have good dispersions in PLA matrices. The thermal and rheological properties of solid PLA composites are demonstrated by differential scanning calorimetry and capillary rheometer, respectively. The microcellular morphology of fractured cross-sectional surfaces is characterized by scanning electron microscope. The batch-foamed PLA composites have more uniform cells in comparison with foamed pure PLA parts due to the mineral particles.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Effects of Sintering Temperature on Densification, Microstructure and Mechanical Properties of Al-Based Alloy by High-Velocity Compaction

Metals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 218
Author(s):  
Xianjie Yuan ◽  
Xuanhui Qu ◽  
Haiqing Yin ◽  
Zaiqiang Feng ◽  
Mingqi Tang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
High Velocity ◽  
Sintered Density ◽  
Sintering Temperature ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
High Velocity Compaction ◽  
Sintered Temperature

This present work investigates the effects of sintering temperature on densification, mechanical properties and microstructure of Al-based alloy pressed by high-velocity compaction. The green samples were heated under the flow of high pure (99.99 wt%) N2. The heating rate was 4 °C/min before 315 °C. For reducing the residual stress, the samples were isothermally held for one h. Then, the specimens were respectively heated at the rate of 10 °C/min to the temperature between 540 °C and 700 °C, held for one h, and then furnace-cooled to the room temperature. Results indicate that when the sintered temperature was 640 °C, both the sintered density and mechanical properties was optimum. Differential Scanning Calorimetry, X-ray diffraction of sintered samples, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, and Transmission Electron Microscope were used to analyse the microstructure and phases.

Characterization of the Phase Transformations in the Shape Memory Alloy Ni-36 at.% Al

1991 ◽  
Vol 246 ◽  
Author(s):  
J.A. Horton ◽  
E.P. George ◽  
C.J. Sparks ◽  
M.Y. Kao ◽  
O.B. Cavin ◽  
...  
Keyword(s):  
High Temperature ◽  
Shape Memory ◽  
Phase Transformations ◽  
Hot Extrusion ◽  
Exothermic Peak ◽  
Nickel Aluminum ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractA survey by differential scanning calorimetry (DSC) and recovery during heating of indentations on a series of nickel-aluminum alloys showed that the Ni-36 at.% Al composition has the best potential for a recoverable shape memory effect at temperatures above 100°C. The phase transformations were studied by high temperature transmission electron microscopy (TEM) and by high temperature x-ray diffraction (HTXRD). Quenching from 1200°C resulted in a single phase, fully martensitic structure. The initial quenched-in martensites were found by both TEM and X-ray diffraction to consist of primarily a body centered tetragonal (bct) phase with some body centered orthorhombic (bco) phase present. On the first heating cycle, DSC showed an endothermic peak at 121°C and an exothermic peak at 289°C, and upon cooling a martensite exothermic peak at 115° C. Upon subsequent cycles the 289°C peak disappeared. High temperature X-ray diffraction, with a heating rate of 2°C/min, showed the expected transformation of bct phase to B2 between 100 and 200°C, however the bco phase remained intact. At 400 to 450°C the B2 phase transformed to Ni2Al and Ni5Al3. During TEM heating experiments a dislocation-free martensite transformed reversibly to B2 at temperatures less than 150°C. At higher temperatures (nearly 600°C) 1/3, 1/3, 1/3 reflections from an ω-like phase formed. Upon cooling, the 1/3, 1/3, 1/3 reflections disappeared and a more complicated martensite resulted. Boron additions suppressed intergranular fracture and, as expected, resulted in no ductility improvements. Boron additions and/or hot extrusion encouraged the formation of a superordered bct structure with 1/2, 1/2, 0 reflections.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

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