Low Dislocation Soi by Oxygen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
A.H. Van Ommen
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Point Defects ◽  
Defect Density ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Temperature Annealing ◽  
High Quality ◽  
To Come ◽  
Sharp Interfaces

AbstractRecent results on silicon on insulator structures formed by implantation of oxygen and subsequent high temperature annealing will be discussed. The resulting silicon on insulator structure has sharp interfaces and a dislocation density of less than 105 cm -2 in the top silicon film. This density of defects is several orders of magnitude lower than previously reported values. The relation between the microstructure after implantation and this relatively low defect density will be discussed. Silicon point defects will be shown to play an important role in the establishment of the microstructure during implantation. Relations between implantation conditions, point defect concentrations and microstructure will be discussed to come to the formulation of the boundary conditions for the formation of high quality silicon on insulator material by this method.

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

A novel porous substrate for the growth of high quality GaN crystals by HVPE

RSC Advances ◽  
2014 ◽  
Vol 4 (66) ◽  
pp. 35106-35111 ◽  
Author(s):  
Yuanbin Dai ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Yongliang Shao ◽  
Yuan Tian ◽  
...  
Keyword(s):  
Residual Stress ◽  
High Temperature ◽  
Defect Density ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Porous Substrate ◽  
High Quality

This manuscript describes a high temperature annealing process to prepare a porous substrate. The substrate was used for the growth of GaN by using HVPE method to provide reduced residual stress and low defect density.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

2021 ◽  
Vol 42 (12) ◽  
pp. 122804
Author(s):  
Shangfeng Liu ◽  
Ye Yuan ◽  
Shanshan Sheng ◽  
Tao Wang ◽  
Jin Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Flat Surface ◽  
Epitaxial Lateral Overgrowth ◽  
High Temperature Annealing ◽  
High Quality ◽  
High Crystalline Quality ◽  
X Ray ◽  
Lateral Overgrowth

Abstract In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

Instabilities and Point Defects at Step-Free Si(001) and (111) Terraces During High Temperature Annealing

1999 ◽  
Vol 587 ◽  
Author(s):  
Doohan Lee ◽  
Jack M. Blakely
Keyword(s):  
High Temperature ◽  
Point Defect ◽  
Point Defects ◽  
Strain Energy ◽  
Annealing Temperature ◽  
Small Islands ◽  
High Temperature Annealing ◽  
Atomic Steps ◽  
The Stability

AbstractIn this paper we describe observations on the stability of extremely large Si(001) and (111) terraces that are formed by a technique described previously. Following annealing at high temperature and quenching, a series of concentric pits of monoatomic depth are observed with spacing between successive pits of the order of several microns; pits do not form on (111) until the terraces get extremely large. The occurrence of small islands or small pits on the terraces of quenched samples gives information on the majority point defect at the annealing temperature. On (001) samples that are slowly cooled from the annealing temperature, it is observed that pairs of atomic steps have formed on the large terrace; we believe that these result from the tendency of the surface to minimize the strain energy associated with the (2 × 1) reconstruction.

High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth

2020 ◽  
Vol 1014 ◽  
pp. 14-21
Author(s):  
Wen Kai Yue ◽  
Zhi Min Li ◽  
Xiao Wei Zhou ◽  
Jin Xing Wu ◽  
Pei Xian Li
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
High Quality ◽  
Rocking Curve ◽  
Stress Mode ◽  
Aln Film ◽  
Before And After ◽  
Screw Dislocation Density

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x107 cm-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.

Introducing Voids around the Interlayer of AlN by High Temperature Annealing

2021 ◽  
Author(s):  
Jianwei Ben ◽  
Jiangliu Luo ◽  
Zhichen Lin ◽  
Xiaojuan Sun ◽  
Xinke Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Temperature Annealing ◽  
Simple Method ◽  
Metal Organic ◽  
Interlayer Structure ◽  
Organic Chemical Vapor Deposition

Abstract To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.

Sign in / Sign up

Export Citation Format

Share Document