Imaging and Elemental Analysis of Polymer/Fullerene Nanocomposite Memory Devices

2008 ◽  
Vol 1071 ◽  
Author(s):  
Ari Laiho ◽  
Jayanta K. Baral ◽  
Himadri S. Majumdar ◽  
Daniel Tobjörk ◽  
Janne Ruokolainen ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Active Layer ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Active Material ◽  
Acid Methyl Ester ◽  
Active Device ◽  
Cross Sectional ◽  
Plan View ◽  
Aluminum Electrodes

AbstractIn this report we study the morphology and chemical composition of a nanocomposite memory device where the active device layer is sandwiched between two aluminum electrodes and consists of a nanocomposite of polystyrene (PS) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The morphology of the active layer is imaged both in plan-view and cross-sectional view by using transmission electron microscopy (TEM). We introduce two techniques to prepare the cross-sections from the active layer, namely, a conventional technique based on microtoming and secondly nanostructural processing with focused ion beam (FIB). Based on the morphology studies we deduce that within the used concentrations the PCBM forms spherical nanoscale clusters within the continuous PS matrix. The chemical composition of the device is determined by using X-ray photoelectron spectroscopy (XPS) and it shows that the thermal evaporation of the aluminum electrodes does not lead to observable inclusion of the aluminum into the active material layer.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

FIB Plan View Preparation and Electron Tomography of Ga-Containing Droplets Induced by Melt-Back Etching in Si

2016 ◽  
Vol 22 (1) ◽  
pp. 131-139 ◽  
Author(s):  
Katharina I. Gries ◽  
Katharina Werner ◽  
Andreas Beyer ◽  
Wolfgang Stolz ◽  
Kerstin Volz
Keyword(s):  
Focused Ion Beam ◽  
Driving Forces ◽  
Electron Tomography ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Scanning Transmission Electron Microscope ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Plan View ◽  
Investigation Methods

AbstractMelt-back etching is an effect that can occur for gallium (Ga) containing III/V semiconductors grown on Si. Since this effect influences interfaces between the two compounds and therefore the physical characteristics of the material composition, it is desirable to understand its driving forces. Therefore, we investigated Ga grown on Si (001) via metal organic chemical vapor deposition using trimethyl Ga as a precursor. As a result of the melt-back etching, Ga-containing droplets formed on the Si surface which reach into the Si wafer. The shape of these structures was analyzed by plan view investigation and cross sectional tomography in a (scanning) transmission electron microscope. For plan view preparation a focused ion beam was used to avoid damage to the Ga-containing structures, which are sensitive to the chemicals normally used during conventional plan view preparation. Combining the results of both investigation methods confirms that the Ga-containing structure within the Si exhibits a pyramid shape with facets along the Si {111} lattice planes.

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

Preparation of plan view and cross-sectional specimens for TEM

1993 ◽  
Vol 51 ◽  
pp. 706-707
Author(s):  
Peter J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Specimen Thickness ◽  
Success Rates ◽  
Thin Sample ◽  
Cross Sectional ◽  
New Techniques ◽  
Plan View ◽  
The 1960S

The preparation of thin specimens remains one of the most important aspects of electron microscopy. Over the forty years in which materials TEM has been practised the rate of introduction of radically new techniques has been very low. In the 1960s microscopists were using electropolishing, chemical polishing, mechanical polishing, ion beam thinning and ultramicrotomy, many of which are also covered in this symposium thirty years later. The last three decades have seen a process of refinement and automation so that success rates and areas of thin sample are both much higher in the 1990s than they were in the 1960s. However the preparation of good specimens still requires skill and an element of "art" remains. The increase in electron energy which helped microscopists to overcome limitations of specimen preparation in the 1970s has now (for very good reasons) stopped, so the basic specimen thickness requirements for standard microscopy are now stable.

Cross-Sectional and Plan-View Observation of Cracks Introduced in Si at the Ductile-Brittle Transition Temperature

1998 ◽  
Vol 539 ◽  
Author(s):  
Suprijadi ◽  
H. Saka
Keyword(s):  
Transition Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mode I ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Brittle Transition ◽  
Ductile Brittle Transition Temperature ◽  
Brittle Transition Temperature

AbstractMode I cracks introduced in Si at the ductile-brittle transition temperature (DBTT) have been examined extensively using transmission electron microscopy. Cross-sectional as well as plane-view specimens suitable for the observation were prepared using a focused ion beam technique. Many small dislocation loops nucleate at the fracture surface of a mode I crack during the propagation at DBTT.

Al / Al-N / Ain Compositional Gradient Film Synthesized by Ion-Beam Assisted Deposition Method

1996 ◽  
Vol 438 ◽  
Author(s):  
Yoshiki Amamoto ◽  
Shingo Uchiyama ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Deposition Method ◽  
Si Substrate ◽  
Compositional Gradient ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
The Cross

AbstractAl / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.

Preparation of Cross Sectional and Plan View TEM Samples of Thin Films on Mgo Substrates with an Additional Chemical Thinning Step

1990 ◽  
Vol 199 ◽  
Author(s):  
Shang. H. Rou ◽  
Philip. D. Hren ◽  
Angus. I. Kingon
Keyword(s):  
Thin Films ◽  
Orthophosphoric Acid ◽  
Ion Beam ◽  
Ion Milling ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Sample Preparation Procedure ◽  
Common Substrate ◽  
Beam Damage

ABSTRACTSingle crystal MgO is a common substrate for the deposition of oxide thin films. The conventional cross sectional transmission electron microscopy sample preparation procedure suffers the drawbacks of: 1)- extensive ion milling time; 2) a higher milling rate for the thin films than for the substrate; 3) introduction of artifacts and contamination during ion milling; and 4) generation of excess defects into the substrate during mechanical thinning. An additional chemical thinning step using hot orthophosphoric acid can reduce or eliminate these adverse effects.This technique can be applied generally to thin film samples deposited on substrates with a low ion milling rate. Furthermore, substrates which are sensitive to mechanical stress and ion beam damage are also suitable for this technique, provided an appropriate chemical polishing solution and compatible epoxy can be found. The unique features of this technique are briefly presented.

Defect Structures Generated by Buried Amorphous Layer Regrowth in Arsenic Implanted Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
Kevin S. Jones ◽  
S. Prussin
Keyword(s):  
Ion Beam ◽  
Amorphous Layer ◽  
High Energy ◽  
Dislocation Loops ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Plan View ◽  
Extrinsic Dislocation ◽  
Shear Type ◽  
Type Dislocation

AbstractPlan-view and 90° cross-sectional TEM examination was used to investigate the correlation between the type of amorphous layer produced and the resulting defect structure observed upon annealing. Both <100> and <111> Si wafers were ion implanted with high energy (190 keV) arsenic over a range of doses(1 × 1015/cm2 to 5 × 1015/cm2). A Wayflow endstation was used allowing ion beam induced epitaxial crystallization (IBIEC)[8] or dynamic annealing of the sample to occur. Implanted <111> Si is shown to form a continuous amorphous layer up to the surface, while <100> implanted Si forms a buried amorphous layer. The regrowth of the buried x-layer by furnace annealing is shown to be responsible for the formation of shear type dislocation loops at the interface where the two x/c regrowth fronts meet (catagory IV defects).[7] However if the buried layer is regrown by dynamic annealing a different structure results.In addition to using <111> wafers, other parameter changes which resulted in the formation of surface amorphous layers included decreasing the implant energy from 190 keV to 100 keV, or implanting the wafer at 77K instead of using the Wayflow endstation. Regrowth of the surface amorphous layers produced by these changes did not result in the formation of shear type dislocation loops. Further annealing of the 100 keV Wayflow implant and the 190 keV 77K implant at 900°C for 30 minutes resulted in the formation of small prismatic extrinsic dislocation loops beneath the location of the original amorphous/crystalline interface (catagory II defects).[71]

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

2014 ◽  
Vol 778-780 ◽  
pp. 697-701 ◽  
Author(s):  
Marek Wzorek ◽  
Andrzej Czerwiński ◽  
Jacek Ratajczak ◽  
Michał A. Borysiewicz ◽  
Andrian V. Kuchuk ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Surface Morphology ◽  
Ohmic Contacts ◽  
Microstructure Characterization ◽  
Cross Sectional ◽  
Plan View

Distribution of chemical composition in nickel-based ohmic contacts ton-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degradation of surface morphology.

Formation of Ge Nanocrystals in Lu2O3 High-k Dielectric and its Application in Non-Volatile Memory Device

2007 ◽  
Vol 997 ◽  
Author(s):  
Mei Yin Chan ◽  
Pooi See Lee ◽  
Vincent Ho
Keyword(s):  
Photoelectron Spectroscopy ◽  
Annealing Treatment ◽  
Electrical Performance ◽  
Cross Sectional ◽  
Plan View ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric ◽  
Ge Nanocrystals

AbstractA simple technique for the formation of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric was demonstrated by pulsed laser ablation followed by rapid thermal annealing in N2 ambient. The structure and composition of the Ge nanocrystals in the oxide matrix have been studied by transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS) analysis. A significant change in the structure and chemical composition of the film was obtained upon annealing. Cross-sectional and plan-view TEM images confirmed the formation of small Ge nanocrystals in amorphous Lu2O3 matrix with a mean size of about 6nm in diameter and a high areal density of 7 × 1011cm−2. The nanocrystals are well-isolated by the amorphous Lu2O3 in between, with almost spherical shape which are favorable for non-volatile memory (NVM) application due to an effective charge confinement. XPS measurements on the as-deposited sample indicate the existence of Ge in its oxidized state, consisting of GeO2 and Ge suboxides. A spontaneous reduction of GeO2 and GeOx was obtained after the annealing treatment, which provides Ge nuclei for nanocrystal formation. It is found that a low annealing temperature of 400oC is sufficient to dissociate the GeO2 and GeOx leading to the formation of Ge nanocrystals. The application of the nanocrystals in NVM devices was demonstrated by C-V characterization of the memory capacitor devices fabricated with Al2O3 control oxide layer. C-V results show a significant effect of the structure and composition of the film on the electrical performance of the device. The annealed device exhibits good memory behavior with a large memory window of 1.2V achieved with a low operation voltage.

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