Record Conductivity for P-Type Transparent Conductors in Polycrystalline Thin Films of a Sulfide-Fluoride

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jesse Frantz ◽  
Jasbinder S. Sanghera ◽  
Syed B. Qadri ◽  
Ishwar D. Aggarwal
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Protective Layer ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Polycrystalline Thin Films ◽  
Sulfur Fluoride ◽  
P Type

AbstractBarium copper sulfur fluoride thin films with a face-centered cubic phase in the Fm3m space group were synthesized via RF magnetron sputtering. The results of a detailed optical and electronic characterization of the films are presented. As-deposited, they exhibit degenerate p-type conductivity at room temperature of approximately 260 S/cm – higher than that of any previously reported p-TC. Their conductivity after post-deposition processing increases to as high as 800 S/cm. The films exhibit bandgaps ranging from 1.45-1.75 eV. They are typically deposited with a substrate temperature between room temperature and 100°C, making them suitable for deposition on plastic as well as glass or crystalline substrates. It was found that a silica protective layer reduces degradation in film transparency that is caused by exposure to air.

Study of the Defect Levels and Interface Properties of CdTe and CdS Polycrystalline Thin Films

1991 ◽  
Vol 238 ◽  
Author(s):  
F. Abou-Elfotouh ◽  
S. Ashour ◽  
S. A. Alkuhaimi ◽  
J. Zhang ◽  
D. J. Dunlavy ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deep Trap ◽  
Cdte Film ◽  
Interface States ◽  
Polycrystalline Thin Films ◽  
Deviation From Stoichiometry ◽  
Electrochemically Deposited ◽  
Defect Levels ◽  
P Type

ABSTRACTThe properties (electrical and structural) and the defect levels dominating cadmium telluride (CdTe) films prepared by radio frequency (rf) planar magnetron sputtering, and electrochemical deposition have been determined and compared. The properties of the deposited CdTe film and the behavior of its interface with cadmium sulfide (CdS) depend strongly on the method of depositing the CdTe film, and on postdeposition heat treatments. These treatments determine various parameters crucial to the device performance, including the type and concentration of the dominant defects, interface states, and deep trap levels. Photoluminescence (PL) emission from p-type CdTe polycrystalline thin films and single crystals is reported at low temperatures (9–50 K) as well as at room temperature. The room temperature PL peak at 1.58 eV due to band-to-band recombination was observed for the first time in polycrystalline thin films. The peak location of the exciton emission is indicative of the structure perfection of the film, which is also related to the deviation from stoichiometry. The as-grown polycrystalline films are composed of a close-packed array of preferentially oriented (the [100], [110], and [111] axes aligned perpendicular to the substrate) single-crystal grains of a size in the range of 0.25–2.0 μm for the electrochemically deposited films (E-film) and 0.3–4.0 μm for rf sputtered material (rf-film). The resistivity of the heat treated E-film was substantially lower than that of the rf-film (ρ = 1.0–5.0 and 300–500 Ωcm). The performance of the CdS/(E-CdTe) devices is limited by deep levels, while the performance of die rf-CdTe device is affected by a high density of interface states.

scholarly journals Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 23 (3) ◽  
Author(s):  
Raul Ramos ◽  
Marcio Peron Franco de Godoy ◽  
Elidiane Cipriano Rangel ◽  
Nilson Cristino da Cruz ◽  
Steven F. Durrant ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
P Type ◽  
Co Doped

The Influence of Sputtering Power on the Structural, Morphological and Optical Properties of ZnSe Thin Films Deposited by R.F Magnetron Sputtering

2014 ◽  
Vol 1058 ◽  
pp. 240-243 ◽  
Author(s):  
Yan Zheng ◽  
Qian Liang ◽  
Bing Li ◽  
Guang Gen Zeng ◽  
Wen Wu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Transmission Rate ◽  
Morphological Properties ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Glass Substrates ◽  
Polycrystalline Thin Films ◽  
Sputtering Power ◽  
Znse Thin Films

By creatively using R.F Magnetic sputtering technique , we have successfully prepared ZnSe polycrystalline thin films on glass substrates..The effect of different sputtering powers on the structural, morphological and optical properties of the as-deposited films were studied. The films were characterized by using X-ray diffraction, UV-VIS spectrometer ,scanning electrical microscope ,etc. The results indicate that :Under the pressure of o.8pa,with the diverse sputtering power varying from 60w to 100w,the intensities of XRD peaks of ZnSe thin films varied apparently ,while the morphological properties were almost the same. It should be noted here that the crystallinity of the ZnSe film, which was deposited with the power of 90W, showed a face-centered cubic phase. Besides, it showed relatively better performance: with strong [111] orientation ,smooth surface without obvious defects, comparatively large band gap and high transmission rate.

scholarly journals Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

2016 ◽  
Vol 113 (46) ◽  
pp. 12929-12933 ◽  
Author(s):  
Chang Yang ◽  
Max Kneiβ ◽  
Michael Lorenz ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Visible Spectral Range ◽  
Transparent Conductors ◽  
Transparent Conductor ◽  
Temperature Dependent ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
P Type

A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for as-deposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60–85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ−1. Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor–metal transition depending on the iodine/argon ratio in the sputtering gas.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Potentiostatic deposition of Cu2O films as p-type transparent conductors at room temperature

2016 ◽  
Vol 616 ◽  
pp. 760-766 ◽  
Author(s):  
M.M. Moharam ◽  
E.M. Elsayed ◽  
J.C. Nino ◽  
R.M. Abou-Shahba ◽  
M.M. Rashad
Keyword(s):  
Room Temperature ◽  
Transparent Conductors ◽  
Potentiostatic Deposition ◽  
Cu2o Films ◽  
P Type
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