Low Temperature Bonding via Copper Nanowires for 3D Integrated Circuits

2010 ◽  
Vol 1249 ◽  
Author(s):  
Shu Rong Chun ◽  
Wardhana Aji Sasangka ◽  
Chee Lip Gan ◽  
Hui Cai ◽  
Chee Mang Ng
Keyword(s):  
Shear Strength ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Ion Beam ◽  
Bonding Temperature ◽  
Copper Nanowires ◽  
Aao Template ◽  
Sem Images ◽  
3D Integrated Circuits ◽  
Low Temperature Bonding

AbstractLow temperature bonding is desired for compatibility with back-end-of-line processing (BEOL) conditions in order not to affect the three dimensional (3D) Integrated Circuits (IC) device performance. In this paper, the aim is to demonstrate that thermocompression bonding temperature can be lowered by changing the copper (Cu) film with Cu nanowires fabricated via electrodeposition through anodized aluminum oxide (AAO) template. A comparison was done between film-to-film (Film-Film) and nanowires-to-nanowires (NWs-NWs) bonding in terms of microstructure and shear strength. Cross-sectional images captured by Focused Ion Beam (FIB) revealed good interface between NWs-NWs bonding as the nanowires had fused together. Scanning Electron Microscope (SEM) images of samples after shear test also demonstrated that there is good adhesion between the bonding layers. Results from shear tests showed an increase in shear strength of NWs-NWs bonding as compared to that of Film-Film bonding at 200 °C. In addition, NWs-NWs bonding at 300 °C achieved higher shear strength than at 200 °C. In this study, it has been shown that copper nanowires fabricated via electrodeposition through porous AAO template can be a potential method to form a bonding intermediate layer for 3D ICs.

Low Temperature Copper-Nanorod Bonding for 3D Integration

2006 ◽  
Vol 970 ◽  
Author(s):  
Pei-I Wang ◽  
Tansel Karabacak ◽  
Jian Yu ◽  
Hui-Feng Li ◽  
Gopal G. Pethuraja ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Morphological Changes ◽  
Ion Beam ◽  
Bonding Temperature ◽  
Bonding Layer ◽  
Nanorod Arrays ◽  
3D Integration ◽  
Sem Images ◽  
Bonding Pressure

ABSTRACTWafer bonding is an emerging technology for fabrication of complex three-dimensional (3D) structures; particularly it enables monolithic wafer-level 3D integration of high performance, multi-function microelectronic systems. For such a 3D integrated circuits, low-temperature wafer bonding is required to be compatible with the back-end-of-the-line processing conditions. Recently our investigation on surface melting characteristics of copper nanorod arrays showed that the threshold of the morphological changes of the nano-rod arrays occurs at a temperature significantly below the copper bulk melting point. With this unique property of the copper nanorod arrays, wafer bonding using copper nanorod arrays as a bonding intermediate layer was investigated at low temperatures (400 °C and lower). 200 mm Wafers, each with a copper nanorod array layer, were bonded at 200 – 400 °C and with a bonding down-force of 10 kN in a vacuum chamber. Bonding results were evaluated by razor blade test, mechanical grinding and polishing, and cross-section imaging using a focus ion beam/scanning electron microscope (FIB/SEM). The FIB/SEM images show that the copper nanorod arrays fused together accompanying by a grain growth at a bonding temperature of as low as 200 °C. A dense copper bonding layer was achieved at 400 °C where copper grains grew throughout the copper structure and the original bonding interface was eliminated. The sintering of such nanostructures depends not only on their feature size, but also significantly influenced by the bonding pressure. These two factors both contribute to the mass transport in the nanostructure, leading to the formation of a dense bonding layer.

Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration

2009 ◽  
Vol 1156 ◽  
Author(s):  
Rahul Agarwal ◽  
Wouter Ruythooren
Keyword(s):  
Citric Acid ◽  
Low Temperature ◽  
Bonding Temperature ◽  
Atmospheric Condition ◽  
High Strength ◽  
Bonding Process ◽  
3D Integration ◽  
Temperature And Pressure ◽  
Low Temperature Bonding

AbstractHigh yielding and high strength Cu-Cu thermo-compression bonds have been obtained at temperatures as low as 175°C. Plated Cu bumps are used for bonding, without any surface planarization step or plasma treatment, and bonding is performed at atmospheric condition. In this work the 25μm diameter bumps are used at a bump pitch of 100μm and 40μm. Low temperature bonding is achieved by using immersion bonding in citric acid. Citric acid provides in-situ cleaning of the Cu surface during the bonding process. The daisy chain electrical bonding yield ranges from 84%-100% depending on the bonding temperature and pressure.

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

2002 ◽  
Vol 81 (27) ◽  
pp. 5099-5101 ◽  
Author(s):  
A. Georgakilas ◽  
G. Deligeorgis ◽  
E. Aperathitis ◽  
D. Cengher ◽  
Z. Hatzopoulos ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Optoelectronic Devices ◽  
Wafer Scale ◽  
Wafer Scale Integration ◽  
Low Temperature Bonding ◽  
Scale Integration

scholarly journals Low Temperature Nickel Induced Crystallization of Amorphous Silicon Nanorods on Silicon and Glass Substrates

2020 ◽  
Vol 2 (2) ◽  
pp. 164-169
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Nanorod Arrays ◽  
Simple Method ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
3D Integrated Circuits ◽  
Induced Crystallization

In this work, crystallization of amorphous silicon (a-Si) nanorods was done by metal induced crystallization (MIC) method at low temperature (500oC) suitable for circuit applications and low cost, disposable biosensors. The crystallization of a-Si nanorods was investigated by Raman and TEM methods. These data showed oriented crystallized Si nanorods have been obtained by metal induced crystallization (MIC) method on different substrates, which can be suitable for 3D integrated circuits, optical and electrochemical applications. This simple method can be used to produce silicon nanorod arrays with high quality suitable for nanoelectronic and optoelectronic applications.

Low temperature bonding with high shear strength using micro-sized Ag particle paste for power electronic packaging

2017 ◽  
Vol 29 (5) ◽  
pp. 3800-3807 ◽  
Author(s):  
Myong-Hoon Roh ◽  
Hiroshi Nishikawa ◽  
Seiichiro Tsutsumi ◽  
Naruhiko Nishiwaki ◽  
Keiichi Ito ◽  
...  
Keyword(s):  
Shear Strength ◽  
Low Temperature ◽  
Electronic Packaging ◽  
High Shear ◽  
Power Electronic ◽  
High Shear Strength ◽  
Ag Particle ◽  
Low Temperature Bonding

Solid State Bonding of Silver Foils to Metalized Alumina Substrates at 260°C

2011 ◽  
Vol 133 (4) ◽  
Author(s):  
Chu-Hsuan Sha ◽  
Pin J. Wang ◽  
Wen P. Lin ◽  
Chin C. Lee
Keyword(s):  
Shear Strength ◽  
Solid State ◽  
Shear Test ◽  
Static Pressure ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Sem Images ◽  
Solid State Bonding ◽  
Reflow Temperature ◽  
Atomic Distance

Silver (Ag) foils are bonded to alumina substrates by a low temperature solid state bonding process. The alumina substrate is premetalized with 40 nm titanium tungsten (TiW) and 2.54 μm gold (Au). The bonding temperature is just 260 °C, compatible with the peak reflow temperature of lead-free (Pb-free) solders used in electronic industries. The Ag foil is quite soft and ductile. It can deform to mate with the Au surface on alumina. Thus, only 1000 psi of static pressure is needed to bring Ag atoms and Au atoms within atomic distance on the interface. Ag has superior physical properties. It has the highest electrical and thermal conductivities among the metals. Scanning electron microscope (SEM) images show that the Ag foil is well bonded to the Au layer on alumina. A standard shear test is performed to determine the shear strength of the bonding. The shear strength of five samples tested far exceeds the strength requirement of MIL-STD-883 G standard.

Study on Crystallization Mechanism of GeSn Interlayer for Low Temperature Ge/Si Bonding

2021 ◽  
Author(s):  
Ziwei Wang ◽  
Ziqi Zhang ◽  
Donglin Huang ◽  
Shaoying Ke ◽  
Zongpei Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Wafer Bonding ◽  
Photonic Integrated Circuits ◽  
High Strength ◽  
Activation Process ◽  
Low Temperature Bonding ◽  
Gesn Alloy ◽  
Interlayer Bonding ◽  
Si Wafer

Abstract Low temperature bonding technologies is necessary in next-generation photonic integrated circuits, such as flexible optoelectronic devices, low dark current Ge/Si devices and so on. Since Germanium-Tin (GeSn) alloy has lower crystallization temperature, in this work, amorphous GeSn with 5% Sn alloy by magnetron sputtering is introduced as an intermediate layer for wafer bonding innovatively. And high strength Ge/Si heterojunction with a crystal GeSn layer is realized without any surface activation process. Two mechanisms in the interlayer crystallization are put forward and substantiated experimentally and theoretically: 1) the a-GeSn turns to be poly-GeSn due to the induction of the c-Ge substrate. 2) Stress between Si wafer and interlayer due to thermal mismatch contributes to the crystallization. It is concluded that GeSn semiconductor interlayer bonding would be one of the potential technologies for bonding process.

AMPCOLOY 495

Alloy Digest ◽  
1966 ◽  
Vol 15 (11) ◽  
Keyword(s):  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Shear Strength ◽  
Low Temperature ◽  
Physical Properties ◽  
High Strength ◽  
Heat Treating ◽  
Aluminum Bronze ◽  
High Manganese ◽  
Temperature Performance

Abstract AMPCOLOY 495 is a high manganese type of aluminum bronze recommended where high strength and corrosion resistance are required along with good weldability. It is recommended for marine equipment and ship propellers. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive and shear strength as well as fracture toughness, creep, and fatigue. It also includes information on low temperature performance and corrosion resistance as well as casting, forming, heat treating, machining, and joining. Filing Code: Cu-171. Producer or source: Ampco Metal Inc..

AWHF STEEL

Alloy Digest ◽  
1972 ◽  
Vol 21 (6) ◽  
Keyword(s):  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Shear Strength ◽  
Low Temperature ◽  
Physical Properties ◽  
Heat Treating ◽  
Steel Company ◽  
Cold Forming ◽  
Temperature Performance ◽  
Minimum Yield

Abstract AWHF STEEL is a high-formability steel produced regularly at minimum yield strengths of 45,000 and 50,000 psi and for special applications at 55,000 and 60,000 psi. It is recommended for difficult cold-forming applications that involve bending or drawing and it has good weldability. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and compressive and shear strength as well as fracture toughness and fatigue. It also includes information on low temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: SA-275. Producer or source: Alan Wood Steel Company.

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