Chemical Vapor Functionalization of ZnO Nanocrystals

2010 ◽  
Vol 1260 ◽  
Author(s):  
Moazzam Ali ◽  
Marty D. Donakowski ◽  
Markus Winterer
Keyword(s):  
Gas Phase ◽  
Diffuse Reflectance ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zno Nanocrystals ◽  
In Series ◽  
Lower Temperature ◽  
Diffuse Reflectance Infrared

AbstractChemical Vapor Functionalization (CVF) is a method in which nanocrystals undergo in situ functionalization in the gas phase. In CVF, two reactors are used in series. The first reactor consists of a hot quartz tube (1073 K) where ZnO nanocrystals are synthesized in the gas phase from diethylzinc and oxygen. The second reactor, connected at the exit of the first one and kept at lower temperature (673 K), is used as functionalization chamber. At the connecting point of the two reactors, vapors of organic functionalizing agents are injected which react with the surface of ZnO nanocrystals. ZnO nanocrystals have been functionalized by 1-hexanol, n-hexanoic acid, n-hexanal and 1-hexylamine. Functionalized ZnO nanocrystals have been characterized by Dynamic Light Scattering, X-ray Diffraction and Diffuse Reflectance Infrared Fourier Transform Spectroscopy.

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

2009 ◽  
Vol 615-617 ◽  
pp. 987-990 ◽  
Author(s):  
Arnaud Claudel ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
D. Pique ◽  
Michel Pons
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Bulk Growth

In order to achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) 4H SiC at 1750°C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Influences of N/Al ratio in the gas phase on growth rate, crystalline state and microstructure are presented. Growth rates of up to 200 µm/h have been reached for polycrystalline layers. Thermodynamic calculations were carried out and correlated to the experimental results. As-grown AlN layers were characterized by SEM and X-ray Diffraction. Surface morphology is studied by SEM and FEG-SEM and crystallographic orientations were obtained by X-ray diffraction on θ/2θ.

scholarly journals Effect of Zirconia Polymorph on Vapor-Phase Ketonization of Propionic Acid

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 768 ◽  
Author(s):  
Shuang Ding ◽  
Jiankang Zhao ◽  
Qiang Yu
Keyword(s):  
Propionic Acid ◽  
Vapor Phase ◽  
Surface Concentration ◽  
X Ray Diffraction ◽  
In Situ Drifts ◽  
X Ray ◽  
Surface Intermediates ◽  
Temperature Programmed ◽  
Diffuse Reflectance Infrared

Vapor-phase ketonization of propionic acid derived from biomass was studied at 300–375 °C over ZrO2 with different zirconia polymorph. The tetragonal ZrO2 (t-ZrO2) are more active than monoclinic ZrO2 (m-ZrO2). The results of characterizations from X-ray diffraction (XRD) and Raman suggest m-ZrO2 and t-ZrO2 are synthesized by the solvothermal method. NH3 and CO2 temperature-programmed desorption (NH3-TPD and CO2-TPD) measurements show that there were more medium-strength Lewis acid base sites with lower coordination exposed on m-ZrO2 relative to t-ZrO2, increasing the adsorption strength of propionic acid. The in situ DRIFTS (Diffuse reflectance infrared Fourier transform spectroscopy) of adsorbed propionic acid under ketonization reaction reveal that as the most abundant surface intermediates, the monodentate propionates are more active than bidentate propionates. In comparison with m-ZrO2, the t-ZrO2 surface favors monodentate adsorption over bidentate adsorption. Additionally, the adsorption strength of monodentate propionate is weaker on t-ZrO2. These differences in adsorption configuration and adsorption strength of propionic acid are affected by the zirconia structure. The higher surface concentration and weaker adsorption strength of monodentate propionates contribute to the higher ketonization rate in the steady state.

Large-scale and facile fabrication of PbSe nanostructures by selenization of a Pb sheet

2015 ◽  
Vol 08 (05) ◽  
pp. 1550063 ◽  
Author(s):  
Sara Hoomi ◽  
Ramin Yousefi ◽  
Farid Jamali-Sheini ◽  
Abdolhossein Sáaedi ◽  
Mohsen Cheraghizade ◽  
...  
Keyword(s):  
Large Scale ◽  
Chemical Vapor ◽  
Infrared Region ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Facile Fabrication ◽  
Higher Temperature ◽  
Set Up ◽  
Lower Temperature

PbSe nanostructures were synthesized by selenization of lead sheets in a chemical vapor deposition (CVD) set-up under a selenium ambiance. The lead sheets were placed in the different temperature zones, between 300°C and 450°C. Field emission scanning electron microscope (FESEM) images showed that, PbSe nanostructures grown on the lead sheets with different morphologies. PbSe nanostructures with flakes shape were grown on the lead sheets that were placed in the lower temperature, while PbSe nanocubes and nanorods, which were grown on the nanocubes, were grown on the lead sheets in the higher temperature. The phase and composition of the product were identified by X-ray diffraction (XRD) pattern and X-ray photoelectron spectra (XPS). The XRD and XPS results showed that, the PbSe phase was started to form after 350°C and completed at 450°C. However, the XPS results showed that the Se concentration was different in the samples. In addition, Raman measurements confirmed the XRD and XPS results and indicated three Raman active modes, which belonged to PbSe phase for the nanostructures. The optical properties of the products were characterized by UV–Vis. The optical characterization results showed a band gap for the PbSe nanostructures in the infrared region.

Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates

2006 ◽  
Vol 527-529 ◽  
pp. 1505-1508
Author(s):  
Ümit Özgür ◽  
Y. Fu ◽  
Cole W. Litton ◽  
Y.T. Moon ◽  
F. Yun ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Structural Quality ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Porous Network ◽  
X Ray ◽  
Radiative Efficiency ◽  
Decay Times ◽  
Threading Dislocation Density

Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.

Preparation and Optical Properties of CuS Nanofilms by a Facile Two-Step Process

2017 ◽  
Vol 16 (01) ◽  
pp. 1650021 ◽  
Author(s):  
Zhankui Cui ◽  
Junqiang Zhou ◽  
Suxiang Ge ◽  
Hongxiao Zhao
Keyword(s):  
Optical Properties ◽  
Gas Phase ◽  
Phase Reaction ◽  
Spherical Nanoparticles ◽  
X Ray Diffraction ◽  
Step Process ◽  
X Ray ◽  
Gas Phase Reaction ◽  
Composition And Structure ◽  
Lower Temperature

CuS nanofilms were prepared by a facile two-step process including chemical bath deposition of Cu nanofilms first and the subsequent thermal sulfuration step. The composition and structure of the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Raman spectroscopy. The optical properties of CuS nanofilms were determined by Ultraviolet-visible (UV-Vis) technique. The results show that the nanofilms composed by Cu spherical nanoparticles were completely transformed to the nanofilms composed by CuS nanosheets when the sulfuration temperature was 350[Formula: see text]C. The light absorption edges of CuS nanofilms exhibit red shift when sulfuration occurred at lower temperature. A plausible growth mechanism related with gas phase reaction for formation of CuS nanofilms was also proposed.

scholarly journals Changing Contents of Carbon Hybridizations in Amorphous Hydrogenated Carbon Layers (a-C:H) on Sustainable Polyhydroxybutyrate (PHB) Exhibit a Significant Deterioration in Stability, Depending on Thickness

2019 ◽  
Vol 5 (3) ◽  
pp. 52 ◽  
Author(s):  
Torben Schlebrowski ◽  
Lucas Beucher ◽  
Hadi Bazzi ◽  
Barbara Hahn ◽  
Stefan Wehner ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Chemical Vapor ◽  
Drift Spectroscopy ◽  
Significant Deterioration ◽  
X Ray ◽  
Diffuse Reflectance Infrared ◽  
X Ray Absorption ◽  
Amorphous Hydrogenated Carbon

PHB is a biodegradable polymer based on renewable raw materials that could replace synthetic polymers in many applications. A big advantage is the resulting reduction of the waste problem, as well as the conservation of fossil resources. To arrange it for various applications, the surface is arranged by plasma-enhanced chemical vapor deposition (PECVD) with amorphous hydrogenated carbon layers (a-C:H). Here, on a 50 µm thick PHB-foil, a-C:H layers of different thicknesses (0–500 nm) were deposited in 50 nm steps. Surface topography was investigated by scanning electron microscopy (SEM), chemical composition by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and wettability checked by contact angle. In addition, layers were examined by synchrotron supported X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS), which revealed thickness dependent changes of the sp2/sp3 ratio. With increasing thickness, even the topography changes show internal, stress-induced phenomena. The results obtained provide a more detailed understanding of the predominantly inorganic a-C:H coatings on (bio)polymers via in situ growth.

The Effect of H2 Dilution On Thin Film SiN Deposited by Hot Wire Cvd Using SiH4 and NH3 Gas Mixtures

2001 ◽  
Vol 664 ◽  
Author(s):  
A. C. Dillon ◽  
L. Gedvillas ◽  
D. L. Williamson ◽  
J. Thiesen ◽  
J. D. Perkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Phase ◽  
Chemical Vapor ◽  
Structural Disorder ◽  
Gas Mixtures ◽  
Film Structure ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
X Ray ◽  
N Incorporation

ABSTRACTThe structure of thin film SiN, deposited by the hot wire chemical vapor deposition (HWCVD) technique using SiH4 and NH3 gas mixtures, has been examined as a function of the amount of H2 dilution of the gas mixture. For NH3/SiH4 gas ratios > 0.5/1, all films are a-SiN:H. While H2 dilution does not change the basic film structure, in that the films are amorphous with all dilutions, H2 dilution does increase the efficiency of NH3 dissociation in the gas phase, and causes a further reduction in the already small amount of N-H bonding in a-SiN:H films deposited by HWCVD. For NH3/SiH4 gas ratios typically <0.5/1 and with high H2 dilution, the first deposition of µc-SiN is demonstrated. X-ray diffraction (XRD) measurements demonstrate that the structure of these films consists of silicon crystallites embedded in an a-SiN:H matrix. An upper limit for N incorporation with the preservation of microcrystallinity was found, beyond which the films again became amorphous. The existence of this limit is explained in terms of structural disorder in the a-SiN:H tissue brought about by N incorporation.

scholarly journals Metal film deposition by laser breakdown chemical vapor deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

Sign in / Sign up

Export Citation Format

Share Document