The Effect of H2 Dilution On Thin Film SiN Deposited by Hot Wire Cvd Using SiH4 and NH3 Gas Mixtures

2001 ◽  
Vol 664 ◽  
Author(s):  
A. C. Dillon ◽  
L. Gedvillas ◽  
D. L. Williamson ◽  
J. Thiesen ◽  
J. D. Perkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Phase ◽  
Chemical Vapor ◽  
Structural Disorder ◽  
Gas Mixtures ◽  
Film Structure ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
X Ray ◽  
N Incorporation

ABSTRACTThe structure of thin film SiN, deposited by the hot wire chemical vapor deposition (HWCVD) technique using SiH4 and NH3 gas mixtures, has been examined as a function of the amount of H2 dilution of the gas mixture. For NH3/SiH4 gas ratios > 0.5/1, all films are a-SiN:H. While H2 dilution does not change the basic film structure, in that the films are amorphous with all dilutions, H2 dilution does increase the efficiency of NH3 dissociation in the gas phase, and causes a further reduction in the already small amount of N-H bonding in a-SiN:H films deposited by HWCVD. For NH3/SiH4 gas ratios typically <0.5/1 and with high H2 dilution, the first deposition of µc-SiN is demonstrated. X-ray diffraction (XRD) measurements demonstrate that the structure of these films consists of silicon crystallites embedded in an a-SiN:H matrix. An upper limit for N incorporation with the preservation of microcrystallinity was found, beyond which the films again became amorphous. The existence of this limit is explained in terms of structural disorder in the a-SiN:H tissue brought about by N incorporation.

Stress in Hydrogenated Microcrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Peiró ◽  
C. Voz ◽  
J. Bertomeu ◽  
J. Andreu ◽  
E. Martínez ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Silicon Thin Films ◽  
Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

Progress in study of mono- and multilayers and thin film structure by X-ray reflectivity, grazing incidence X-ray diffraction and spectroscopy

2014 ◽  
Vol 83 (12) ◽  
Author(s):  
M A Shcherbina ◽  
S N Chvalun ◽  
Sergey Anatol'evich Ponomarenko ◽  
Mikhail Valentinovich Kovalchuk
Keyword(s):  
Thin Film ◽  
Grazing Incidence ◽  
Film Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film Structure

Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction

2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Transition Layer ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Thin Film ◽  
Chemical Vapor Deposited

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

Chemical Vapor Functionalization of ZnO Nanocrystals

2010 ◽  
Vol 1260 ◽  
Author(s):  
Moazzam Ali ◽  
Marty D. Donakowski ◽  
Markus Winterer
Keyword(s):  
Gas Phase ◽  
Diffuse Reflectance ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zno Nanocrystals ◽  
In Series ◽  
Lower Temperature ◽  
Diffuse Reflectance Infrared

AbstractChemical Vapor Functionalization (CVF) is a method in which nanocrystals undergo in situ functionalization in the gas phase. In CVF, two reactors are used in series. The first reactor consists of a hot quartz tube (1073 K) where ZnO nanocrystals are synthesized in the gas phase from diethylzinc and oxygen. The second reactor, connected at the exit of the first one and kept at lower temperature (673 K), is used as functionalization chamber. At the connecting point of the two reactors, vapors of organic functionalizing agents are injected which react with the surface of ZnO nanocrystals. ZnO nanocrystals have been functionalized by 1-hexanol, n-hexanoic acid, n-hexanal and 1-hexylamine. Functionalized ZnO nanocrystals have been characterized by Dynamic Light Scattering, X-ray Diffraction and Diffuse Reflectance Infrared Fourier Transform Spectroscopy.

scholarly journals Metal film deposition by laser breakdown chemical vapor deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

Epitaxial Growth of AlN on 3C-SiC and Al2O3 Substrates

1992 ◽  
Vol 242 ◽  
Author(s):  
B. S. Sywe ◽  
Z. J. Yu ◽  
J. H. Edgar
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Polycrystalline ◽  
Deposited Films ◽  
Metalorganic Chemical

ABSTRACTA1N films were grown on the (100) plane of 3C-SiC/Si and the (0001) plane of A12O3 substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMA) and ammonia (NH3) as the precursors. The deposited films were characterized by X-ray diffraction (XRD) and a Read thin film camera. At 1150°C, preferentially oriented polycrystalline AlN films were obtained on both substrates and the crystal structure was wurtzite. The epitaxial relations were (1010)AlN//(100)SiC//(100)Si and (0001)AlN// (0001)Al2O3. The attempt to grow cubic AlN on 3C-SiC/Si was not successful.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

2009 ◽  
Vol 615-617 ◽  
pp. 987-990 ◽  
Author(s):  
Arnaud Claudel ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
D. Pique ◽  
Michel Pons
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Bulk Growth

In order to achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) 4H SiC at 1750°C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Influences of N/Al ratio in the gas phase on growth rate, crystalline state and microstructure are presented. Growth rates of up to 200 µm/h have been reached for polycrystalline layers. Thermodynamic calculations were carried out and correlated to the experimental results. As-grown AlN layers were characterized by SEM and X-ray Diffraction. Surface morphology is studied by SEM and FEG-SEM and crystallographic orientations were obtained by X-ray diffraction on θ/2θ.

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