Oxygen Precipitation in Silicon: Monte Carlo and Deterministic Studies

1988 ◽  
Vol 141 ◽  
Author(s):  
James P. Lavine ◽  
Russell J. Taras ◽  
Gilbert A. Hawkins
Keyword(s):  
Monte Carlo ◽  
Oxygen Concentration ◽  
Three Dimensional ◽  
Nucleation Site ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Nucleation Sites ◽  
Precipitate Growth ◽  
Oxygen Precipitates ◽  
Oxygen Atoms

AbstractInterstitial oxygen precipitates in silicon during thermal treatment. The amount precipitated increases in an S-shaped fashion as a function of increasing initial interstitial oxygen concentration. A likely hypothesis for this behavior is that the number of nucleation sites that develop into precipitates (successful sites) varies with the initial interstitial oxygen concentration as well as with the precipitation rate at each site. In this paper, a deterministic precipitate growth model is first used to show that a fit to the present data requires the precipitate density to increase by more than a factor of 10 when the oxygen concentration goes from 24 to 40 ppma.Three-dimensional Monte Carlo calculations are then used to show how the nucleation site survival probability depends on the initial number of oxygen atoms at the site and the oxygen concentration. The program treats oxygen diffusion, growth at nucleation sites by the addition of oxygen atoms, and loss at nucleation sites by the escape of oxygen atoms.

Monte Carlo Simulation of Precipitate Nucleation and Growth: Time Dependent Results

1988 ◽  
Vol 141 ◽  
Author(s):  
James P. Lavine ◽  
Gilbert A. Hawkins
Keyword(s):  
Monte Carlo ◽  
Crystalline Silicon ◽  
Three Dimensional ◽  
Nucleation Site ◽  
Nucleation And Growth ◽  
Lattice Points ◽  
Growth Time ◽  
Decay Kinetics ◽  
Time Step ◽  
Oxygen Atoms

AbstractA three-dimensional Monte Carlo computer program has been developed to study the heterogeneous nucleation and growth of oxide precipitates during the thermal treatment of crystalline silicon. In the simulations, oxygen atoms move on a lattice with randomly selected lattice points serving as nucleation sites. The change in free energy that the oxygen cluster would experience in gaining or losing one oxygen atom is used to govern growth or dissolution of the cluster. All the oxygen atoms undergo a jump or a growth decision during each time step of the anneal. The growth and decay kinetics of each nucleation site display interesting fluctuation phenomena. The time dependence of the cluster size generally differs from the expected 3/2 power law due to the fluctuations in oxygen arrival at and incorporation in a precipitate. Competition between growing sites and coarsening are observed.

Proton Induced Structuring of a Photostructurable Glass

2002 ◽  
Vol 739 ◽  
Author(s):  
Meg Abraham ◽  
Inmaculada Gomez-Morilla ◽  
Mike Marsh ◽  
Geoff Grime
Keyword(s):  
Three Dimensional ◽  
Particle Beam ◽  
Nucleation Site ◽  
Buried Structures ◽  
Corning Glass ◽  
Nucleation Sites ◽  
Initial Nucleation ◽  
Similar Product ◽  
Photon Process ◽  
Meta Silicate

ABSTRACTThe use of photons to create intricate three-dimensional and buried structures [1] in photo-structurable glass has been well demonstrated at several institutions [2]. In these instances the glass used whether it be Foturan™, made by the Schott Group or a similar product made by Corning Glass, forms a silver nucleation sites on exposure to intense UV laser light via a two-photon process. Subsequent annealing causes a localized crystal growth to form a meta-silicate phase which can be etched in dilute hydrofluoric acid at rates of 20 to 50 times that of the unprocessed glass. The same formulation of glass can be “exposed” using a particle beam to create the nucleation site. In the case of particle beam exposure, experiments have shown that the mechanisms that cause this initial nucleation and eventual stochiometric transformation, after annealing, depend largely on the beam energy.

X-Ray Measurement of the Static Lattice Distortion in the Solid Solution of Oxygen in Titanium*

1962 ◽  
Vol 6 ◽  
pp. 136-141
Author(s):  
F. R. L. Schoening ◽  
F. Witt
Keyword(s):  
Single Crystal ◽  
Oxygen Concentration ◽  
Waller Factor ◽  
Interstitial Oxygen ◽  
Exponential Factor ◽  
X Ray ◽  
X Ray Scattering ◽  
Lattice Strains ◽  
Debye Waller Factor ◽  
Oxygen Atoms

AbstractOxygen was introduced into a single crystal of titanium in successive stages. The intensities of the h00 and 00l reflections were measured with a single-crystal diffractometer. The observed variation of the intensities with oxygen concentration was attributed to three factors: (1) the additional scattering from the oxygen atoms, (2) a change in the Debye-Waller factor, and (3) an exponential factor originating from the distortion around the oxygen atom. The theory of X-ray scattering from crystals containing centers of distortion was applied to the hexagonal titanium containing interstitial oxygen atoms. Using the variation of the lattice constant with oxygen concentration, it was possible to predict the intensity reduction due to lattice strains. It was concluded that it would have been possible to obtain an estimate of the defect concentration from the X-ray measurements of lattice expansion and intensity reduction.

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

2005 ◽  
Vol 108-109 ◽  
pp. 169-174 ◽  
Author(s):  
Jadwiga Bak-Misiuk ◽  
Andrzej Misiuk ◽  
Barbara Surma ◽  
Artem Shalimov ◽  
Charalamos A. Londos
Keyword(s):  
Oxygen Concentration ◽  
Neutron Irradiation ◽  
Point Defects ◽  
Interstitial Oxygen ◽  
Pressure Treatment ◽  
X Ray ◽  
Effect Of Pressure ◽  
Oxygen Precipitation ◽  
Ray Methods ◽  
High Hydrostatic Pressures

Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to irradiation with neutrons (5 MeV, dose 1x1017 cm-2) and subsequently treated for 5 h under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270 / 1400 K, were investigated by spectroscopic and X - Ray methods. Point defects created by neutron irradiation stimulate oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changed concentration and mobility of silicon interstitials and vacancies as well as of the VnOm – type defects.

A Model That Describes the Role of Oxygen, Carbon, and Silicon Interstitials in Silicon Wafers During Device Processing

1984 ◽  
Vol 36 ◽  
Author(s):  
R. A. Hartzell ◽  
H. F. Schaake ◽  
R. G. Massey
Keyword(s):  
Differential Equation ◽  
Partial Differential Equation ◽  
Nucleation And Growth ◽  
Silicon Wafers ◽  
Partial Differential ◽  
Oxygen Precipitation ◽  
Device Processing ◽  
Precipitate Growth ◽  
Oxygen Precipitates

ABSTRACTA model has been developed that simulates oxygen precipitation in silicon wafers during high temperature device processing. The approach used to calculate the nucleation and growth of oxygen precipitates is radically different from other approaches presented in the literature. A discrete rate equation representation of nucleation and growth has been transformed into a continuum representation in the form of a partial differential equation. This partial differential equation describing both the statistical clustering of oxygen during nucleation and the diffusion driven transport during precipitate growth is solved continuously starting from crystal growth through any arbitrary time-dependent temperature process.

Early stages of oxygen precipitation in si: morphology and structure

1988 ◽  
Vol 46 ◽  
pp. 478-479
Author(s):  
W. Bergholz ◽  
J. L. Hutchison
Keyword(s):  
High Pressure ◽  
Controversial Issues ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
Initial Stage ◽  
Vlsi Technology ◽  
Precipitate Growth ◽  
Morphology And Structure ◽  
Pressure Phase

Intrinsic gettering in Si - VLSI technology depends on a controlled initial stage of oxygen precipitation and is characterized by a complicated interaction of growth-induced microdefects, self interstitial (SiI) generation and strain caused by SiO2 precipitate growth and secondary defects, table 1. We address the controversial issues of the identity of ribbon-like defects (RLDs) and of the nature of oxygen precipitate nuclei.RLDs were initially identified by HRTEM as coesite, a high pressure phase of SiO2. Recently, both Bourret and Reiche et al have interpreted the RLDs as hexagonal Si, or agglomerates of Si. We wish to make the point that the evidence against coesite is, as yet, not conclusive, and present circumstantial evidence in favour of coesite: (1) The loss of interstitial oxygen correlates with the density of RLDs (Fig. 1) at 450 - 485°C.

Oxygen Precipitation in Silicon: Numerical Models

1985 ◽  
Vol 59 ◽  
Author(s):  
J. P. Lavine ◽  
G. A. Hawkins ◽  
C. N. Anagnostopoulos ◽  
L. Rivaud
Keyword(s):  
Experimental Data ◽  
Numerical Model ◽  
Numerical Models ◽  
Local Concentration ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Precipitate Growth ◽  
Evolution Of Precipitates ◽  
Precipitate Density

ABSTRACTWe present a numerical model that simulates the evolution of precipitates and the diffusion of interstitial oxygen in Czochralski silicon. The growth and/or dissolution of each precipitate and the local concentration of interstitial oxygen with which the precipitates interact are followed as a function of time. We treat realistic densities of discrete, interacting precipitates and determine how the precipitate density influences the extent of the precipitation. The model also treats oxygen outdiffusion and the formation of precipitate-free or denuded zones. We apply the model to previous experimental data on the time dependence of precipitate growth and to the development of denuded zones during intrinsic gettering.

Structure of Thermally-Induced Microdefects in Czochralski Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
F. A. Ponce ◽  
S. Hahn
Keyword(s):  
Quasi Equilibrium ◽  
Interstitial Oxygen ◽  
Thermally Induced ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Long Time ◽  
History Of ◽  
Silicon Materials ◽  
Oxygen Precipitates

ABSTRACTThe process of oxygen precipitation in Czochralski silicon materials has been studied using high resolution transmission electron microscopy. The resulting structure depends strongly on the thermal history of the material. The initial stages of precipitation involve the formation of clusters exhibiting strain fields which are coherent and isotropic at intermediate temperatures (∼7000°C). Incoherent defects are formed when the interstitial oxygen precipitates into substitutional sites in the silicon lattice. For long-time anneals, the quasi-equilibrium defect structure ranges from needle-like coesite (450–600°C), silica platelets (600–1000°C) to polyhedral silica precipitates (900–1200°C).

Carbon and the Kinetics of Oxygen Precipitation in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
R.F. Pinizzotto ◽  
S. Marks
Keyword(s):  
Oxygen Content ◽  
Oxygen Concentration ◽  
Carbon Concentration ◽  
Oxygen Solubility ◽  
Low Oxygen ◽  
Subsequent Increase ◽  
High Oxygen Content ◽  
Oxygen Precipitation ◽  
Precipitate Growth ◽  
Initial Oxygen

ABSTRACTOxygen precipitation in Czochralski silicon has been studied as a function of anneal time, oxygen concentration and carbon concentration using FTIR. It was found that the oxygen supersaturation controls the precipitation kinetics in high oxygen content samples, whereas the carbon concentration is of prime importance in low oxygen content samples. The decrease in sustitutional carbon concentration after nucleation and its subsequent increase with extended growth anneals supports the view that carbon affects precipitate nucleation, but not precipitate growth. The measured oxygen solubility at 1000°C was found to depend on both the initial oxygen concentration and the initial carbon concentration.

Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Koizuka ◽  
M. Inaba ◽  
H. Yamada-Kaneta
Keyword(s):  
Heat Treatment ◽  
Oxygen Concentration ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Precipitation Characteristics ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Absorption Technique

AbstractWe present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

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