Temperature Dependence of Damage in Boron-Implanted Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
G. Ottaviani ◽  
F. Nava ◽  
R. Tonini ◽  
S. Frabboni ◽  
G. F. Cerofolini ◽  
...  
Keyword(s):  
Room Temperature ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Vacuum Furnace ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Projected Range ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Residual Damage

AbstractWe have performed a systematic investigation of boron implantation at 30 keV into <100> n-type silicon in the 77 –300 K temperature range and mostly at 9×1015 cm−2 fluence. The analyses have been performed with ion channeling and cross sectional transmission electron microscopy both in as-implanted samples and in samples annealed in vacuum furnace at 500 °C and 850 °C for 30 min. We confirm the impossibility of amorphization at room temperature and the presence of residual damage mainly located at the boron projected range. On the contrary, a continuous amorphous layer can be obtained for implants at 77 K and 193 K; the thickness of the implanted layer is increased by lowering the temperature, at the same time the amorphous-crystalline interface becomes sharper. Sheet resistance measurements performed after isochronal annealing shows an apparent reverse annealing of the dopant only in the sample implanted at 273 K. The striking differences between light and heavy ions observed at room temperature implantation disappears at 77 K and full recovery with no residual damage of the amorphous layer is observed.

Damage Evolution in Xe-Ion Irradiated Rutile (TiO2) Single Crystals

1998 ◽  
Vol 540 ◽  
Author(s):  
Fuxin Li ◽  
Ping Lu ◽  
Kurt E. Sickafus ◽  
Caleb R. Evans ◽  
Michael Nastasi
Keyword(s):  
Single Crystals ◽  
Ion Irradiation ◽  
Amorphous Layer ◽  
High Concentration ◽  
Cross Sectional ◽  
Defect Migration ◽  
Ion Channeling ◽  
Projected Range ◽  
Transmission Electron ◽  
Nucleation Sites

AbstractRutile (TiO2) single crystals with (110) orientation were irradiated with 360 keV Xe2+ ions at 300K to fluences ranging from 2×1019 to 1×1020 Xe/m2. Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2×1O19 Xe/m2, the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large- sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7×1019 Xe/m2, a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maXimum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Residual Damage in Heavily Germanium-Doped Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Esin Demirlioğlu ◽  
Sheldon Aronowitz ◽  
David Su
Keyword(s):  
Low Dose ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Implantation Energy ◽  
Damage Layer ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Residual Damage ◽  
High Doses

ABSTRACTCross-sectional transmission electron microscopy (XTEM) studies have shown that two distinct damage regions are created when germanium is implanted into single-crystal silicon in high doses and subsequently annealed at high temperatures. The first layer extends approximately 90–95 nm into silicon for an implant energy of 120 keV. The second region is an end-of-range damage region located 200 nm from the silicon surface for the same implantation energy. Neither low-dose, low-energy boron implantation nor the type of cap layers used during annealing alter the damage pattern. Although the dose of the Ge implants is the major factor in the formation of the continuous damage layer, high oxygen concentration at the surface may also contribute to this effect.

Implant Damage in AlGaAs Based Superlattices and Alloys at 77K

1989 ◽  
Vol 147 ◽  
Author(s):  
E. A. Dobisz ◽  
H. Dietrich ◽  
A. W. McCormick ◽  
J. P. Harbison
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Thickness ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Current Work ◽  
Cross Sectional ◽  
Bulk Gaas ◽  
Transmission Electron ◽  
Extensive Damage

AbstractPreviously, it was shown that superlattices implanted with Si at 77K, exhibited more extensive damage and uniform compositional mixing upon subsequent annealing than samples implanted at room temperature.[l,2] The current work focuses on the damage in samples implanted with Si at 77K. The study shows that for a given dose, the amount of damage depends upon the layer thickness and the composition. Specimens of bulk GaAs, Al 3Ga. 7As, 7.5 nm GaAs -10 nm Al. 3Ga. 7As superlattice (SL1), 5.5 nm GaAs −3.5 nm AlAs superlattice (SL2), and 8.0 nm GaAs −8.0 nm AlAs superlat-tice (SL3) were implanted at 77K with 100 KeV Si, with doses ranging from 3 × 1013 cm−2 to 1 × 1015 cm−2. The samples were examined by ion channelling and cross sectional transmission electron microscopy (TEM). At 77K and a dose of 1 × 1014 cm−2, the GaAs and SLi showed an amorphous layer, while no damage peak was observed in SL2. The 77K amorphization thresholds of the Al 3Ga. 7As alloy, SL2, and SL3 were 2.5 × 1014 cm−2, 4 × 1014 cm−2, and 1 × 1015 cm−2 respectively. The sharpness of the amorphization threshold varied with the material.

scholarly journals Thin Ni Silicide Formation by Low Temperature-Induced Metal Atom Reaction with Ion Implanted Amorphous Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Yu.N. Erokhin ◽  
B. K. Patnaik ◽  
S. Pramanick ◽  
F. Hong ◽  
C. W. White ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
Vacuum Furnace ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Silicon Area ◽  
Transmission Electron ◽  
Silicide Growth

ABSTRACTWe have extended our recent work [1,2] on buried suicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si+ ion implantation has been investigated at temperature ≤400 °C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), X-ray diffraction and four-point-probe measurements were used to determine the structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360 °C for 8 hours followed by an additional step at 400 °C for one hour produces a continuos NiSi2 layer with a resistivity 44 μΩ cm.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Elevated Temperature Implantation of GaAs with Si Ions.

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Brown ◽  
J. S. Williams
Keyword(s):  
Elevated Temperatures ◽  
Amorphous Layer ◽  
Ion Flux ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Residual Damage ◽  
Radiation Induced ◽  
Small Clusters ◽  
Induced Defects

AbstractThe formation of amorphous layers in GaAs during ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, is shown to be extremely sensitive to the ion flux, fluence, and implantation temperature. For example, with increasing fluence, damage can first build up extremely slowly, then suddenly collapse to the amorphous phase. Alternatively, for a constant ion fluence, a change in flux by one order of magnitude can change the critical temperature for amorphisation by 27°C, and at constant flux and fluence, a change of only 6°C can alter the residual damage from small clusters barely visible by conventional transmission electron microscopy and Rutherford backscattering to a thick amorphous layer. The temperature at which this occurs is strongly dependent upon the ion flux and fluence.

Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

2004 ◽  
Vol 843 ◽  
Author(s):  
Songqing Wen ◽  
James Bentley ◽  
Jae-il Jang ◽  
G. M. Pharr
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Indentation Load ◽  
High Load ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Cube Corner ◽  
Displacement Behavior ◽  
Si Wafer

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

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