Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
G. Bai ◽  
M-A. Nicolet ◽  
S.-J. Kim ◽  
R.G. Sobers ◽  
J.W. Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Growth Direction ◽  
Epitaxial Films ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Coherent Interfaces

AbstractSingle layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 eV (λ = 1.55 µm) at room temperature. The lattice mismatch at room temperature between the epitaxial film and the substrate varies from - 4 × 10-3 to + 4 × 10-3. The strain in the films was characterized in air by x-ray double crystal diffractometry with a controllable heating stage from 23°C to ~ 700°C. All the samples have an almost coherent interfaces from 23°C to about ~ 330°C with the lattice mismatch accomodated mainly by the tetragonal distortion of the epitaxial films. In this temperature range, the x-ray strain in the growth direction increases linearly with temperature at a rate of (2.0 ± 0.4) × 10-6/°C and the strain state of the films is reversible. Once the samples are heated above ~ 300°C, a significant irreversible deterioration of the epitaxial films sets in.

X-Ray Double Crystal Diffraction Characterization of Epitaxial Magnetic Transiton Metal Difluorides

1990 ◽  
Vol 187 ◽  
Author(s):  
M. Lui ◽  
A. R. King ◽  
V. Jaccarino ◽  
R. F. C. Farrow ◽  
S. S. P. Parkins
Keyword(s):  
Lattice Mismatch ◽  
Magnetic Transition ◽  
Diffraction Theory ◽  
Epitaxial Films ◽  
Structural Quality ◽  
Double Crystal ◽  
Lattice Match ◽  
Rocking Curve ◽  
X Ray ◽  
Quality Material

AbstractEpitaxial films of a variety of magnetic transition metal difluoride films have been grown by molecular beam epitaxy techniques. The structural quality of these films have been characterized using X-ray double crystal rocking curve analysis. The observed rocking curve linewidths were compared to their intrinsic values as calculated by dynamical diffraction theory. The degree of crystalline perfection as judge by the rocking curves have been correlated with the amount of lattice mismatch between the various epitaxial films and substrates. In the well lattice match case (Δa/a < 0.2%) of epitaxial films of FeF2 and CoF2 grown on (001) ZnF2 substrates, the rocking curve line widths approached their intrinsic limit indicative of extremely high quality material. This work represents some of the best epitaxial magnetic insulating films grown to date.

scholarly journals Thermal Strain Measurements in Epitaxial CoSi2/Si by Double Crystal X-Ray Diffraction

1988 ◽  
Vol 130 ◽  
Author(s):  
Gang Bai ◽  
Marc-A. Nicolet ◽  
Thad Vreeland ◽  
Q. Ye ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Room Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Thermal Strain ◽  
Young Modulus ◽  
Film Stress ◽  
Misfit Dislocations ◽  
Double Crystal ◽  
Linear Coefficient ◽  
X Ray

AbstractThe perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼ 600°C by MBE was measured at various temperatures. Within experimental error margins, the strain decreases linearly with rising temperature at a rate of (1.3±0.1) × 10-5/°C from room temperature up to 600°C. Over that temperature range and the duration of a complete measurement (∼5h to ∼ 2h), these strain values remain reversible. At 593°C, the x-ray strain is -0.85%, which is about the strain that a stress-free CoSi2 film on Si(111) would have at that temperature. This results show that the stress in the epitaxial CoSi2 film is fully relaxed at the growth temperature. Strains below the growth temperature are induced in the film by the difference in the linear coefficient of thermal expansion of CoSi2 and Si. They were calculated by assuming that the density of misfit dislocations formed at the growth temperature remains constant. The slope of the strain-temperature dependence obtained that way agrees with the measured slope if the unknown Possion ratio of CoSi2 is assumed to be VcoSi2 = 0.35. A film stress of ∼ 0.8 GPa at room temperature was calculated using the above value for the Possion ratio, 130 GPa for the Young modulus, and the measured x-ray strain.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 82 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
J. H. Dinan
Keyword(s):  
Bragg Reflection ◽  
Strain Tensor ◽  
Epitaxial Films ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Density Maps ◽  
First Time ◽  
Considerable Body ◽  
Double Crystal Diffractometer

SUMMARYThere is a considerable body of work available illustrating the significance of X-ray rocking curve measurements in micro-electronic applications. For the first time a high resolution (100-150µm) 2-dimensional technique called DARC (Digital Autcmated Rocking Curve) topography has been implemented. This method is an enhancement of the conventional double crystal diffractometer using a real time 2-dimensional X-ray detector.Several materials have been successfully examined using DARC topography. Same of these include: Si, GaAs, AlGaAs, InGaAs, HgMnTe, Al, Inconel, steels, etc. By choosing the appropriate Bragg reflection multi-layered micro-electronic structures have been analyzed nondestructively. Several epitaxial films, including HgCdTe and ZnCdTe, grown by molecular beam epitaxy, have also been characterized using iARC topography. The rocking curve half width maps can be translated to dislocation density maps with relative ease. This technique also allows the deconvolution of the micro-plastic lattice strain ccaponent from the total strain tensor.

Photoreflectance Characterization of InGaAs Lattice Matched to InP

1993 ◽  
Vol 324 ◽  
Author(s):  
V. Bellani ◽  
M. Amiotti ◽  
M. Geddo ◽  
G. Guizzetti ◽  
G. Landgren
Keyword(s):  
Energy Gap ◽  
Lattice Mismatch ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Interfacial Strain ◽  
Valence Bands ◽  
Lattice Matched

AbstractWe measured photoreflectance (PR) spectra at different temperatures between 80 and 300 K, and optical absorption (OA) at 3 K on MOVPE grown Inl-xGaxAs nearly lattice-matched to InP. x-ray diffraction measurements gave a lattice mismatch δa/ao = -0.9.10−3 between ternary alloy and InP, corresponding to × = 0.485. We obtained the energy gap dependence on T from PR spectra. The blue shift of the gap was accounted for in terms of compositional difference with respect to the perfectly lattice matched alloy (× = 0.472), and elastic strain; moreover PR and OA showed evidence of the valence bands splitting at k = 0 due to interfacial strain, in fine agreement with theory.

Chemical Beam Epitaxy Grown Indium Gallium Arsenide Tunnel Junctions

1993 ◽  
Vol 300 ◽  
Author(s):  
N. Medelci ◽  
A. Bensaoula ◽  
M. F. Vilela ◽  
A. Freundlich
Keyword(s):  
Indium Gallium Arsenide ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Chemical Beam Epitaxy ◽  
Temperature Peak ◽  
Temperature Dependent ◽  
Peak Current ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTp+/n+ In0.53Ga0.47As tunnel junctions with room temperature peak to valley ratio of 9:1 are demonstrated. The device structures were grown on both InP and GaAs (4% lattice mismatch) using Chemical Beam Epitaxy (CBE). Be and Si were used as dopants. The devices grown on InP exhibit room temperature peak current in excess of 1000 A/cm2. The peak current of 452 A/cm2 achieved on lattice mismatched material (GaAs) is comparable to the highest results previously reported on lattice matched material (InP). Finally, The device characteristics and the influence of different fabrication steps on the performance of these devices are discussed based on temperature dependent I-V measurements.

Structural Studies of Sputtered Ni80Co20/Cu Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
X. Bian ◽  
Z. Altounian ◽  
J. O. Ström-Olsen ◽  
M. Sutton ◽  
R. W. Cochrane
Keyword(s):  
Optical Model ◽  
Film Growth ◽  
Growth Direction ◽  
Interface Roughness ◽  
High Angle ◽  
X Ray ◽  
Compositional Modulation ◽  
Large Expansion ◽  
Reflectivity Data ◽  
Coherent Interfaces

ABSTRACTThe structure of magnetron-sputtered Ni80Co20/Cu multilayershas been investigated by low and high-angle X-ray diffractometry. Low-angle x-ray reflectivity data reveal well-defined compositional modulation along the film growth direction for a wide Cii thickness range of 5-40 Å. The data analysis, based on anl optical model, shows that interfacial mixing is limited to ∼3-4 Å As the number of bilayers increased from 8 to 100, the interface roughness increased by a factor of 3. Better layered structures were found for relatively thick Cu layers (tCu>10Å). The high-angle diffraction data were analyzed using a trapezoidal model. The results indicate that the films have a polycrystalline structure with a preferred (111)orientation with coherent interfaces of ∼ 100-240 Ådepending on the Cu layer thickness. The relatively large expansion of (111) spacings in NiCo alloy layers gives rise to the lower atomic ordering in NiCo/Cu multilayers.

Double Crystal X-Ray Diffraction Measurement of a Triclinicly Distorted and Tilted AlxGa1-xAs Unit Cell Produced by Growth on Offcut GaAs Substrates

1989 ◽  
Vol 159 ◽  
Author(s):  
A. Leiberich ◽  
J. Levkoff
Keyword(s):  
Strain Relaxation ◽  
Growth Direction ◽  
Unit Cell ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Additional Cell ◽  
Additional Strain ◽  
Film Substrate

ABSTRACTCorrections are required for double crystal X-ray diffraction characterization of epitaxial AlxGa1-xAs layers grown on offcut GaAs (100) substrates. Double crystal X-ray diffraction measurements show that the cubic film unit cell defined by Vegard's law is triclinicly distorted and tilted with respect to the substrate unit cell. The distortion and tilt angles oppose each other defining a crystal geometry where the substrate and film <100= axes remain approximately coplanar with the surface normal. This film/substrate crystal geometry leads to formulation of a model describing heteroepitaxy on offcut (100) substrates. When film atoms are bonded to an offcut substrate, the already tetragonaly distorted film unit cell is subjected to additional cell distortions. The magnitude of this additional strain depends on where the film atoms are positioned on a substrate terrace. The first few layers of film atoms establish swain grades across individual substrate terraces. Constrained by the geometry of this interface region and driven by strain relaxation in the net growth direction, subsequent heteroepitaxy forms the measured film/substrate crystal geometry.

Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates

1988 ◽  
Vol 128 ◽  
Author(s):  
Isao Yamada
Keyword(s):  
Room Temperature ◽  
Lattice Mismatch ◽  
Ion Beam ◽  
Substrate Surface ◽  
Metal Films ◽  
Epitaxial Films ◽  
Film Structure ◽  
Film Deposition ◽  
Cluster Beam ◽  
Tem Analysis

ABSTRACTThe effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surface. Atomic resolution TEM analysis suggests that the epitaxy of Al occurs not only on Si surfaces but also at Al/Al grain boundaries. These epitaxial films exhibit extremely high thermal stability and long electromigration life time. To understand the deposition features and film characteristics, the effects of ICB bombardment on the film growth at the initial stage of the deposition and the resultant film structure have been studied. The results show that the role of very low energy ion bombardment is especially important in forming epitaxial metal films. Depositions of Au and Cu on Si substrates have also been made to understand whether ICB deposition may improve the characteristics of other metal films. Preliminary results of these film depositions are also obtained.

Measurement of Elastic Lattice Distortion in PbTe/PbSnTe - Strained Layer Superlatices by Asymmetric High Angle X-ray interfernces

1985 ◽  
Vol 29 ◽  
pp. 367-374
Author(s):  
E. J. Fantner
Keyword(s):  
Elastic Strain ◽  
Lattice Mismatch ◽  
Strain Tensor ◽  
Misfit Strain ◽  
High Angle ◽  
Double Crystal ◽  
X Ray ◽  
Strained Layer ◽  
Thermal Expansion Coefficients ◽  
Quaternary Compounds

AbstractElastic strain significantly affects the electric and optical properties of PbTe/Pb1-xSnxTe - strained-layer superlattices. In the range of 10 - 350K the temperature dependence of the elastic strain present in these superlattices was measured by double-crystal x-ray diffraction. For superlattice periods smaller than 100nm High-angle x-ray interferences were observed. Using a novel method, which makes use of the High-angle interferences both for symmetrical as well as for asymmetrical reflections in a theta-twotheta scan with a narrow detector slit, the relative inclination of equivalent lattice planes due the elastic strain was measured. The components of the complete strain tensor of the constituent layers can be determined seperately even if their unstrained lattice constants are not known with sufficient accuracy as is the case in ternary and quaternary compounds. The lattice mismatch of up to 0.4% for Sn-contents smaller than 20% was found to be accommodated almost completely by elastic misfit strain. The amount of strain is shared between the constituent layers inversely to their relative thicknesses as long as the superlattice as a whole is much thicker than the buffer layer. Below room temperature an additional temperature dependent tensile strain due to differnt thermal expansion coefficients of the film and the BaF2-substrate is measured quantitatively.

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