Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates

1988 ◽  
Vol 128 ◽  
Author(s):  
Isao Yamada
Keyword(s):  
Room Temperature ◽  
Lattice Mismatch ◽  
Ion Beam ◽  
Substrate Surface ◽  
Metal Films ◽  
Epitaxial Films ◽  
Film Structure ◽  
Film Deposition ◽  
Cluster Beam ◽  
Tem Analysis

ABSTRACTThe effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surface. Atomic resolution TEM analysis suggests that the epitaxy of Al occurs not only on Si surfaces but also at Al/Al grain boundaries. These epitaxial films exhibit extremely high thermal stability and long electromigration life time. To understand the deposition features and film characteristics, the effects of ICB bombardment on the film growth at the initial stage of the deposition and the resultant film structure have been studied. The results show that the role of very low energy ion bombardment is especially important in forming epitaxial metal films. Depositions of Au and Cu on Si substrates have also been made to understand whether ICB deposition may improve the characteristics of other metal films. Preliminary results of these film depositions are also obtained.

Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
G. Bai ◽  
M-A. Nicolet ◽  
S.-J. Kim ◽  
R.G. Sobers ◽  
J.W. Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Lattice Mismatch ◽  
Thermal Strain ◽  
Growth Direction ◽  
Epitaxial Films ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Coherent Interfaces

AbstractSingle layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 eV (λ = 1.55 µm) at room temperature. The lattice mismatch at room temperature between the epitaxial film and the substrate varies from - 4 × 10-3 to + 4 × 10-3. The strain in the films was characterized in air by x-ray double crystal diffractometry with a controllable heating stage from 23°C to ~ 700°C. All the samples have an almost coherent interfaces from 23°C to about ~ 330°C with the lattice mismatch accomodated mainly by the tetragonal distortion of the epitaxial films. In this temperature range, the x-ray strain in the growth direction increases linearly with temperature at a rate of (2.0 ± 0.4) × 10-6/°C and the strain state of the films is reversible. Once the samples are heated above ~ 300°C, a significant irreversible deterioration of the epitaxial films sets in.

Production of Ultra-Thin Metal Films Using Neutral Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
A. Ramachandra ◽  
M. Vaziri ◽  
R.P. Andres
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Vacuum Chamber ◽  
Metal Films ◽  
Gold Clusters ◽  
Cluster Beam ◽  
Neutral Cluster ◽  
Finite Electrical Conductivity ◽  
Cluster Beams

ABSTRACTGold clusters (diam. = 1.0 ± .5 nm) are prepared in a gas aggregation source (MECS), expanded into a vacuum chamber to form a neutral cluster beam, and deposited at low impact velocity on room temperature substrates. When several monolayers of these clusters are deposited on clean substrates (nitrocellulose, glass, mica, NaCl), they form smooth ultra-thin films. These cluster-assembled films appear to be similar in quality to those produced by the Takagi-Yamada ion cluster beam process. They exhibit finite electrical conductivity at thicknesses much smaller than is the case with atomically evaporated films. They are extremely uniform and smooth with a surface height that typically varies less than 1 nm across the entire film.

The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfaces

1986 ◽  
Vol 1 (4) ◽  
pp. 537-542 ◽  
Author(s):  
Jeffrey R. Lince ◽  
Tsai C. Thomas ◽  
Williams R. Stanley
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Substrate Surface ◽  
Film Deposition ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Interface Roughening ◽  
Low Energy Electron ◽  
Electron Energy Loss

Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2 were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300°and 480°C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500°C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.

Orientation control of vacuum deposited epitaxial metal films by applying external stress

1978 ◽  
Vol 36 (1) ◽  
pp. 152-153
Author(s):  
S. Maruyama ◽  
K. Yamamoto
Keyword(s):  
Rock Salt ◽  
Room Temperature ◽  
Gold Film ◽  
Metal Films ◽  
Film Plane ◽  
Epitaxial Films ◽  
External Stress ◽  
Flash Method ◽  
Ordered Structure ◽  
Copper Gold

The orientation of vacuum deposited, epitaxial metal films was controlled, by applying external stress, on copper gold ordered alloy, and on gold manganese ordered alloy.Ordered tetragonal or quasi-tetragonal epitaxial films such as CuAuI and gold manganese α″ have the mixed orientation of the shorter axis normal and parallel to the film plane,in the usual deposition in vacuum, i.e., (i)when the copper was deposited immediately after the gold was deposited, on cleaved surface of rock salt and homogenized, as is shown in Fig.la., or (ii)when it is formed by flash method (the two constituent atoms are deposited simultaneously), as shown in Fig.2a. This is very troublesome for the analysis or interpretation of the ordered structure of alloys. The author controlled the orientation so that the shorter axis is overall normal to the film plane in both CuAuI and gold manganese α″ by the following way. An epitaxial gold film held at room temperature for one night was rapidly heated to 350°C (at the rate of 15°C per minute), then copper or manganese was deposited onto it at that temperature, and homogenized

Study on the Effect of FIB Electron Beam Assisted Platinum Deposition on TEM Sample Analysis

2006 ◽  
Author(s):  
Jianqiang Hu ◽  
Jing Zhou ◽  
Ming Li ◽  
Qiang Gao ◽  
Chorng Niou ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Protective Layer ◽  
Sample Surface ◽  
Oxide Thickness ◽  
Film Deposition ◽  
Organic Layer ◽  
Sample Analysis ◽  
Tem Analysis ◽  
Thickness Measurements

Abstract Electron beam assisted platinum film deposition has been found to be an effective method to protect the sample surface for both FIB and TEM analysis. In this paper, the phenomena of electron beam assisted deposition of platinum will be reviewed The results suggest that a 45 nm thick residual Pt film can effectively protects (100) silicon from damage induced by ion beam assisted Pt deposition. A carbon based organic layer under the electron beam assisted Pt has been observed. The mechanism and results on exposed oxide thickness measurements will be discussed. It is suggested that a carbon glue cap be used as a protective layer or polysilicon be deposited in line before submitting the wafer for TEM sample preparation and observation.

Characterization of Si/CaF2/Si Epitaxial Films Grown By MBE

1985 ◽  
Vol 43 ◽  
pp. 362-363
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
R. W. Fathauer ◽  
L. Schowalter
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Research Effort ◽  
Epitaxial Films ◽  
Silicon On Insulator ◽  
3 Dimensional ◽  
Large Research

There has been a large research effort throughout the electronics industry to develop epitaxial Si/insulator/Si structures for silicon-on-insulator (SOI) and 3-dimensional integrated circuit applications. Molecular beam epitaxy (MBE) is one promising method of producing these SOI structures. The use of CaF2 as an insulator is interesting because of the similarities in the Si (diamond cubic) and CaF2, (cubic fluorite) structures, where the lattice mismatch between these two materials is only 0.6% at room temperature. CaF2 also evaporates congruently during epitaxial growth by MBE, therefore, avoiding problems with the control of film stoichiometry. This paper describes the characterization of epitaxial Si overlayer and CaF2, insulator films which were grown on a (111) single crystal Si substrate.

On the Epitaxy of Metal Films on GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
Q.Z. Liu ◽  
K.V. Smith ◽  
E.T. Yu ◽  
S.S. Lau ◽  
N.R. Perkins ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Mismatch ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Determining Factor

ABSTRACTA variety of metal films deposited at room temperature have been found to grow epitaxially under conventional vacuum conditions on GaN grown by metalorganic vapor phase epitaxy on sapphire substrates. The metal films have been characterized by X-ray diffraction using a thin-film Read camera and by MeV ion channeling measurements. Lattice mismatch between the epitaxial metals and the GaN basal planes ranges from ∼ 0.2% to ∼ 22%, and does not appear to be the determining factor in the epitaxy reported here. Surface structure of the epitaxial metal films has been studied by atomic force microscopy and found to differ considerably from that of nonepitaxial metal films grown on similar GaN substrates.

FABRICATION OF LSMO SINGLE LAYERS AND LSMO/YBCO DOUBLE LAYERS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 511-515 ◽  
Author(s):  
HONG ZHU ◽  
MASANORI OKADA ◽  
ATSUSHI KAMIYA ◽  
AJAY KRISHNO SARKAR ◽  
MASAHITO MATSUI ◽  
...  
Keyword(s):  
Double Layer ◽  
Lattice Mismatch ◽  
Ion Beam ◽  
Single Layer ◽  
Epitaxial Films ◽  
Double Layers ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Substrate Temperatures ◽  
Oriented Phase

( La , Sr ) MnO 3 (LSMO) single-layer and LSMO/YBCO double-layer films have been grown on LAO and MgO substrates using ion beam sputtering. For LSMO single-layer films, the highly epitaxial films can be grown at lower substrate temperatures down to 500°C. The epitaxy of the films, which is degraded with increasing TS, can be restored by supply of plasma oxygen. Smaller lattice mismatch of LSMO on LAO gives two-dimensional step-and-terrace type growth, whereas on MgO grain type growth is observed due to larger mismatch. For the double-layer films, LSMO layer can be grown epitaxially on a-oriented YBCO underlayer, but a part of the underlying a-YBCO is changed into c-YBCO during the deposition of overlayer. For c-YBCO underlayer, a part of the underlying c-YBCO is changed into (110)-oriented phase after the deposition of overlayer. Then it is necessary to deposit the overlayer at lower temperatures.

scholarly journals Substrate Heating Measurements in Pulsed Ion Beam Film Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
J. C. Olson ◽  
M. O. Thompson ◽  
H. A. Davis ◽  
D. J. Rej ◽  
W. J. Waganaar ◽  
...  
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
National Laboratory ◽  
Beam Current ◽  
Film Deposition ◽  
Los Alamos National Laboratory ◽  
Oxygen Ions ◽  
Substrate Heating ◽  
Ion Energies ◽  
Deposited Films

AbstractDiamond-like Carbon(DLC) films have been deposited at Los alamos National Laboratory by pulsed ion beam ablation of graphite targets. the targets are illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm2. Ion energies are on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse.Raman spectra of the deposited films indicate an increasing ratio of sp3 to sp2 bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at various positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. Plume power density and energy input are inferred from the temperature measurements. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal.

Hillock Formation in Platinum Films

1992 ◽  
Vol 260 ◽  
Author(s):  
Philip D. Hren ◽  
H. Al-Shareef ◽  
S. H. Rou ◽  
A. I. Kingon ◽  
P. Buaud ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Metal Films ◽  
Film Stress ◽  
Beam Deflection ◽  
Platinum Surface ◽  
Cross Sectional ◽  
Compressive Stresses ◽  
Hillock Formation ◽  
Ion Beam Sputter Deposition

ABSTRACTHillocks, surface protrusions from thin metal films, have been observed in Al, Al/Cu, Pb, and other materials. Platinum films are widely used as substrates for the deposition of ferroelectric thin films because of their superior oxidation resistance. However, hillock formation in platinum films has not been reported in the literature. In this work, we report the appearance of hillocks in platinum in Pt/Ti bilayers on oxidized silicon wafers. Platinum films 250 to 300 nra were deposited by ion beam sputter deposition at 25°C and 300°C onto a 70 nm Ti film on oxidized Si wafers. The wafers were then heated in flowing argon to 600°C, held 1 hr at 600°C, and cooled to room temperature while the wafer curvature (and hence the film stress) was measured with a laser beam deflection technique. At 600°C, compressive stresses of 0.1 to 0.4 GPa, due to thermal expansion mismatch, developed in the metal films. The platinum surface, initially flat, showed strong hillocking after the anneal. Cross-sectional TEM revealed that severe Ti/Pt interdiffusion occurred, in one case leading to a Ti layer on the top surface.

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