Status of β-SiC, Diamond and C-BN Semiconductors; Comparison of a Si Power Fet to a Hypothetical Diamond Fet

1989 ◽  
Vol 162 ◽  
Author(s):  
Richard Koba ◽  
William Russell
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Dielectric Strength ◽  
Wide Bandgap ◽  
Low Dielectric Constant ◽  
Great Promise ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTMonocrystalline β-SiC, diamond and cubic boron nitride (c-BN) are the three ultimate semiconductors. These materials show great promise as active semiconductors for power electronics because of their wide bandgap, the existence of substitutional dopants, their high dielectric strength, their low dielectric constant, and their high thermal conductivity. To illustrate their superiority, a conventional Si.power FET is compared to a theoretical diamond FET. By assuming the diamond FET can operate hotter and at a higher voltage, it is calculated that the diamond FET should deliver up to 35 times more power-to-load than the Si FET.

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Evaluation of Lpcvd Boron Nitride as a Low Dielectric Constant Material

1996 ◽  
Vol 427 ◽  
Author(s):  
R. A. Levy ◽  
M. Narayan ◽  
M. Z. Karim ◽  
S. T. Hsu
Keyword(s):  
Dielectric Constant ◽  
Boron Nitride ◽  
Flow Rate ◽  
Chemical Properties ◽  
Low Dielectric Constant ◽  
Processing Conditions ◽  
Low Dielectric ◽  
Rate Ratios ◽  
And Chemical Properties ◽  
Deposition Conditions

AbstractThis study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

scholarly journals Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Science ◽  
2020 ◽  
Vol 367 (6477) ◽  
pp. 555-559 ◽  
Author(s):  
Ke Chen ◽  
Bai Song ◽  
Navaneetha K. Ravichandran ◽  
Qiye Zheng ◽  
Xi Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
High Power ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Wide Bandgap ◽  
Boron Isotopes ◽  
Fundamental Interest ◽  
Boron Phosphide

Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

Influence of MgO Content on Microstructure and Dielectric Properties in (BaSr)TiO3 Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 85-88
Author(s):  
Lin Hu ◽  
He Ping Zhou ◽  
Hao Xue ◽  
Chun Lai Xu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Low Dielectric Constant ◽  
Microwave Technology ◽  
Phased Array Antennas ◽  
Strontium Titanium Oxide ◽  
Low Dielectric ◽  
Barium Strontium ◽  
High Dielectric

Barium strontium titanium oxide (BSTO) has great advantages and potentiality for the application of microwave technology. In order to be used in phased array antennas, high dielectric tunability, relatively low dielectric constant and low dielectric loss are required. In this paper, MgO was mixed into BSTO and the microstructure and dielectric properties of MgO-mixed BSTO bulk ceramics were investigated. The mole ratio of Ba and Sr was rather fixed to 5:5 in this study. It is observed that a small amount of MgO (5 wt%) has gone beyond the solubility limits of Mg in BSTO. The dielectric constant and dielectric loss of BSTO ceramics decreased with the increase of the content of MgO mixed. However, the tunability of MgO-mixed BSTO ceramics decreased at the same time. 20wt% MgO-mixed BSTO ceramics exhibits preferable dielectric properties with acceptable tunability.

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