Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1125-1130 ◽  
Author(s):  
Chao Hu ◽  
Zhangcheng Liu ◽  
Jingwen Zhang ◽  
Wei Wang ◽  
Hong-Xing Wang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Barrier Height ◽  
Diamond Surface ◽  
Aqua Regia ◽  
X Ray ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

ABSTRACTSchottky properties of Mo on diamond with fluorine- and oxygen-termination had been investigated. Oxygen-termination was generated by aqua regia. Fluorine-termination was generated by CF4plasma treatment. Mo/Ni/Au was deposited on the diamond surface as Schottky electrode, whose barrier height was evaluated from current-voltage curve. After that, the X-ray photoelectron spectroscopy methods were applied to calculate the Schottky barrier height of Mo on different termination surface. The results indicated that the fluorine-termination and oxygen-termination show different schottky properties.

scholarly journals Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 283
Author(s):  
Dong-Hyeon Kim ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Chemical Bonding ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Bonding Structure ◽  
Current Voltage ◽  
Direct Indication

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

A Proposed Regrowth Mechanism for the Enhancement of Schottky Barrier Height to N-GAAS

1994 ◽  
Vol 337 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Gaas Layer ◽  
Dark Field ◽  
Schottky Barriers ◽  
Semiconductor Interface ◽  
Al Content ◽  
Current Voltage ◽  
High Al Content

ABSTRACTA systematic study of the enhancement of Schottky barriers to n-GaAs diodes has been carried out using the Ni-Al binary system. The diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/n-GaAs, have been realized by sputter deposition at a base pressure ∼2xl0-7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs contacts. The enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. The formation of this (Al,Ga)As layer was explained in terms of a regrowth mechanism. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer is believed to react with the Ni-Al layer to form the (Al,Ga)As layer when subjected to a high temperature annealing. A (200) dark field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase.

Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Vickers Microhardness ◽  
Schottky Barrier Diodes ◽  
Microhardness Test ◽  
Current Voltage

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

Effect of Si and Ge Interface Layers on the Schottky Barrier Height of Metal Contacts to GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
J.R. Waldrop ◽  
R.W. Grant
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
New Approach ◽  
X Ray ◽  
Electrical Methods ◽  
Interface Layers ◽  
P Type

ABSTRACTA new approach for extending the range of the Schottky barrier height ϕB of metal contacts to (100) GaAs is described. Very thin (∼ 10-30Å) heavily n-type and p-type Si or Ge interlayers are found to directly alter the GaAi interface Fermi energy EF. X-ray photoemission spectroscopy is used to determine EF during contact formation and the corresponding ϕB for thick contacts is measured by electrical methods. In an appropriate structure the ϕB range for contacts to n-type GaAs is ∼ 0.25 to 1.0 eV. For p-type GaAs ϕB has been increased to as much as 0.9 eV. This method of ϕBcontrol can be used for both Schottky barrier contact and nonalloyed ohmic contact applications. The results are interpreted in terms of a simple heterojunction model.

scholarly journals Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2678
Author(s):  
Philipp Wendel ◽  
Dominik Dietz ◽  
Jonas Deuermeier ◽  
Andreas Klein
Keyword(s):  
Magnetron Sputtering ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Oxygen Vacancies ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Hysteresis Behavior ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

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