New Doping Technique for Getting Highly Conductive p-Type Hydrogenated Amorphous Si and Sic Alloys

ABSTRACTHighly conductive B-doped hydrogenated amorphous Si (a-Si:H) as well as amorphous SiC alloys (a-SiC:H) have been prepared from (SiH4) / (B2H6/SiH4) and (SiH4/CH4)/(B2H6/SiH4) plasmas, respectively by a novel surface-temperature-modulation method. Films produced by this technique exhibit a higher conductivity as compared to the conventionally prepared films, i.e., 7.0×l0−3scm−l for p-type a-Si:H with an optical gap of 1.7eV and 5.5×l0−5Scm−l for p-type a-SiC:H of optical gap 1.9eV.

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Boron doping in a-SiO:H,

Canadian Journal of Physics ◽

10.1139/cjp-2013-0559 ◽

2014 ◽

Vol 92 (7/8) ◽

pp. 586-588 ◽

Cited By ~ 1

Author(s):

Y. Kitani ◽

T. Maeda ◽

S. Kakimoto ◽

K. Tanaka ◽

R. Okumoto ◽

...

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Hole Mobility ◽

Boron Doping ◽

Type A ◽

Dark Conductivity ◽

Wide Range ◽

P Type ◽

Hydrogenated Amorphous ◽

Silicon Oxygen

Boron-doping characteristics in hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility.

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Novel Carbon Source (1,3-Disilabutane) for the Deposition of P-Type a-SiC

MRS Proceedings ◽

10.1557/proc-715-a24.4 ◽

2002 ◽

Vol 715 ◽

Author(s):

Shuhei Yagi ◽

Takashi Okabayashi ◽

Katsuya Abe ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Carbon Source ◽

Vapor Deposition ◽

Energy Gap ◽

Hydrogenated Amorphous Silicon ◽

Type A ◽

Optical Energy Gap ◽

P Type ◽

Photochemical Vapor Deposition ◽

Hydrogenated Amorphous ◽

Sic Films

AbstractWe proposed a new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), to grow hydrogenated amorphous silicon carbide (a-SiC:H) films by mercury-sensitized photochemical vapor deposition (photo-CVD). We described preliminary results of undoped and p-type a-SiC films deposited using 1,3-DSB. It was found that the optical energy gap of the films was changed even at very small 1,3-DSB/silane ratios of few percents. P-type doping was carried out by using diborane and we obtained the films with a darkconductivity of 1.3x10-4 S/cm at the optical bandgap of 2.1 eV. In addition, we applied this material for a p-layer of a p-i-n type a-Si based solar cell and we have achieved relatively high conversion efficiency of 9.55%.

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Dangling-Bond Relaxation and Metastability in P-Type Hydrogenated Amorphous Silicon

MRS Proceedings ◽

10.1557/proc-377-227 ◽

1995 ◽

Vol 377 ◽

Author(s):

Richard S. Crandall ◽

Martin W. Carlen ◽

Klaus Lips ◽

Yueqin Xu

Keyword(s):

Elevated Temperature ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Type A ◽

Dangling Bond ◽

Dangling Bonds ◽

Hole Trapping ◽

P Type ◽

Hydrogenated Amorphous

ABSTRACTWe discuss the subtle effects involved in observing slow dangling bond relaxation by studying capacitance transients in p-type hydrogenated amorphous silicon (a-Si:H). The data suggest that neutral dangling bonds are reversibly converted into metastable positive charged dangling bonds by hole trapping. These metastable positive dangling bonds reconvert to neutral dangling bonds upon annealing at elevated temperature. The annealing kinetics for this process are the same as those observed for annealing of quenched in conductivity changes in p-type a-Si:H.

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Optoelectronic Properties of Amorphous SiGec Alloys

MRS Proceedings ◽

10.1557/proc-258-637 ◽

1992 ◽

Vol 258 ◽

Author(s):

J. Kolodzey ◽

R. Schwarz ◽

F. Wang ◽

T. Muschik ◽

J. Krajewski ◽

...

Keyword(s):

Silicon Germanium ◽

Plasma Deposition ◽

Optical Gap ◽

Random Alloy ◽

Amorphous Si ◽

Silicon Germanium Carbon ◽

Amorphous Silicon Germanium ◽

Hydrogenated Amorphous ◽

Average Bond ◽

Defect Densities

ABSTRACTWe describe the optoelectronic characteristics of hydrogenated amorphous silicon germanium carbon (a.Si1-x-yGexCy:H) alloys prepared by plasma deposition from SiH4/GeH4/CH4/H2 gas mixtures. a-Si1-x-yGexCy:H is a homogeneous random alloy having a variable optical gap depending on composition, with properties similar to those of amorphous Si-Ge alloys of the same optical gap but with improved thermal stability. Calculations show that if the ratio of Ge/C atomic fractions is 8.2, the average bond length matches that of unalloyed amorphous a-Si:H with the possibility of reduced defect densities at heterointerfaces. After light-soaking with high intensity white light, a sample having a 1.3 eV optical gap exhibited no Staebler-Wronski change in its properties.

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N-type (P, Sb) and p-type (B) doping of hydrogenated amorphous Si by reactive rf co-sputtering

physica status solidi (b) ◽

10.1002/pssb.200301537 ◽

2003 ◽

Vol 235 (1) ◽

pp. 111-114 ◽

Cited By ~ 8

Author(s):

Y. Ohmura ◽

M. Takahashi ◽

M. Suzuki ◽

A. Emura ◽

N. Sakamoto ◽

...

Keyword(s):

Type B ◽

Amorphous Si ◽

B Doping ◽

P Type ◽

Hydrogenated Amorphous

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Electron diffraction study of hydrogenated amorphous SiC

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074628 ◽

1983 ◽

Vol 41 ◽

pp. 158-159

Author(s):

R. L. Sabatini ◽

F. J. Kampas ◽

P. E. Vanier ◽

J. Taftø

Keyword(s):

Solar Cell ◽

Electron Diffraction Study ◽

Crystalline Form ◽

Structural Studies ◽

Interatomic Distances ◽

Amorphous Si ◽

Diffraction Patterns ◽

Amorphous Sic ◽

Hydrogenated Amorphous ◽

Solar Cell Material

Hydrogenated amorphous SiC (a-SiC:H) is a promising new solar cell material. In constrast to structural studies of amorphous Si and amorphous C, studies of amorphous SiC are rare. The main features of the diffraction patterns of amorphous Silicon and amorphous Carbon are two diffuse halos which for Si correspond to interatomic distances of about 2.35 Å and 3.85 Å and for C to 1.50 Å and 2.50 Å. These distances are close to the nearest interatomic distances present in the crystalline form of the same elements.Using 120 KeV electrons, we observe two pronounced halos also for a-SiC:H, similar to what is observed for pure Si and pure C. Figure 1 shows diffraction patterns from a-SiC:H and for comparison from Si and C.

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INVESTIGATION PROPERTIES OF a-Si1-xCx:H FILMS ELABORATED BY CO-SPUTTERING OF Si AND 6H-SiC

Modern Physics Letters B ◽

10.1142/s0217984910024262 ◽

2010 ◽

Vol 24 (19) ◽

pp. 2101-2112 ◽

Cited By ~ 6

Author(s):

AISSA KEFFOUS ◽

ABDELHAK CHERIET ◽

YOUCEF BELKACEM ◽

AMAR MANSERI ◽

NOUREDDINE GABOUZE ◽

...

Keyword(s):

Visible Range ◽

X Rays ◽

Secondary Ions ◽

Ir Spectrophotometry ◽

P Type ◽

Amorphous Sic ◽

Two Peaks ◽

Hydrogenated Amorphous ◽

Deposited Film ◽

Photoluminescence Response

Hydrogenated amorphous SiC films ( a - Si 1-x C x: H ) were prepared by DC magnetron sputtering technique on p type Si (100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6 H - SiC ). The deposited film a - Si 1-x C x: H was realized under a mixture of argon and hydrogen gases. The ( a - Si 1-x C x: H ) films have been investigated by scanning electronic microscopy equipped with EDS system (SEM-EDS), X-rays diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-visible-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure of a - Si 0.81 C 0.19: H corresponding to 19 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centered at 463 nm (2.68 eV) and 542 nm (2.29 eV). The structural properties and the origin of the luminescence were discussed.

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