Influence of Silicon Substrate Ion Implantation on the Subsequent Microstructure Evolution in Cobalt Silicide Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Z. G. Xiao ◽  
J. W. Honeycutt ◽  
G. A. Rozgonyi
Keyword(s):  
Direct Evidence ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Transmission Electron ◽  
Amorphous Medium ◽  
Amorphous Si ◽  
The Difference ◽  
New Phase

ABSTRACTThe influence of amorphization of the Si substrate by Ge+ implantation on the microstructural evolution of CoSi2 thin films has been investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD) and four-point-probe measurement. While the silicide films formed on unimplanted or recrystallized Si were similar in formation kinetics, microstructure and resistivity, unique features were found for silicide films formed on amorphized Si. The phase transformation to CoSi2 on amorphized Si was considerably accelerated, the silicide grain size was smaller, and the CoSi2/Si interface was much smoother on the amorphized Si. Direct evidence of grain boundary diffusion induced silicide/Si interface roughness was obtained. The origin of the difference in both the microstructure and kinetics on different Si substrates is explained by the latent energy stored in amorphous Si, increasing the silicide nucleation rate. Weak XRD peaks and different texture were found for the CoSi2 formed on amorphized Si. The facts that the dominant diffusing species during CoSi2 formation is Co, and the new phase was developed in an amorphous medium are thought to be responsible for these phenomena.

scholarly journals Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния

2021 ◽  
Vol 55 (4) ◽  
pp. 373
Author(s):  
Д.А. Ложкина ◽  
Е.В. Астрова ◽  
Р.В. Соколов ◽  
Д.А. Кириленко ◽  
А.А. Левин ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Silicon Monoxide ◽  
Nanocrystalline Silicon ◽  
X Ray Diffraction ◽  
Isochronous Annealing ◽  
Transmission Electron ◽  
Amorphous Medium ◽  
The Difference ◽  
First Time

In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated silicon, the number of its crystallization centers per unit volume nonmonotonically depends on temperature. The activation energy of diffusion of silicon atoms in the SiOx matrix was determined to be Ea1= 1.64 eV, and the activation energy of their transfer from the formed precipitates to the growth medium of SiOx was Ea2 = 2.38 eV. Anisotropic deformation of silicon crystallites precipitated during the disproportionation of SiO has been revealed for the first time. This phenomenon is associated with the difference in the specific volumes of the separated phases and the anisotropy of the growth rate of silicon precipitates formed in a solid amorphous medium.

TiSi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. Mcguire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

AbstractTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Tisi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. McGuire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

ABSTRACTTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Crystallization of Amorphous Si In Al/Si Multilayers

1991 ◽  
Vol 230 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Layered Structure ◽  
Heat Of Reaction ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
Amorphous Si

AbstractThe crystallization of amorphous Si in a Al/Si multilayer (with a modulation length of about 120Å) was investigated using transmission electron microscopy, differential scanning calorimetry and X-ray diffraction. Amorphous Si was found to crystallize at about 175 °C with the heat of reaction of 11±2(kJ/mol). Al grains grow prior to the nucleation of crystalline Si. The crystalline Si was found to nucleate within the grown Al layers. The incipient crystalline Si initially grows within the Al layer and then spreads through the amorphous Si and other Al layers. Because of extensive intermixing, the original layered structure is destroyed. The Al(111) texture is also enhanced.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Nanoporous Ni and Ni-Cu Fabricated by Dealloying

2009 ◽  
Vol 1228 ◽  
Author(s):  
Masataka Hakamada ◽  
Yasumasa Chino ◽  
Mamoru Mabuchi
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Noble Metals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Difference ◽  
20 Nm ◽  
Good Workability ◽  
Scanning Electron

AbstractMetallic nanoporous architecture can be spontaneously attained by dealloying of a binary alloy. The nanoporous architecture can be often fabricated in noble metals such as Au and Pt. In this study, nanoporous Ni, Ni-Cu are fabricated by dealloying rolled Ni-Mn and Cu-Ni-Mn alloys, respectively. Unlike conventional Raney nickel composed of brittle Ni-Al or Cu-Al intermetallic compounds, the initial alloys had good workability probably because of their fcc crystal structures. After the electrolysis of the alloys in (NH4)2SO4 aqueous solution, nanoporous architectures of Ni and Ni-Cu with pore and ligament sizes of 10–20 nm were confirmed by scanning electron microscopy and transmission electron microscopy. X-ray diffraction analyses suggested that Ni and Cu atoms form a homogeneous solid solution in the Ni-Cu nanoporous architecture. The ligament sizes of nanoporous Ni and Ni-Cu were smaller than that of nanoporous Cu, reflecting the difference between diffusivities of Ni and Cu at solid/electrolyte interface. Ni can reduce the pore and ligament sizes of resulting nanoporous architecture when added to initial Cu-Mn alloys.

In Situ Analysis of magnetic and Structural Properties of Epitaxial and Polycrystalline Ni80Fe20 Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
I. Hashim ◽  
H.A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Magnetic Properties ◽  
Kerr Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Interface Roughness ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTWe have investigated structural and magnetic properties of epitaxial Ni80Fe20 films grown on relaxed epitaxial Cu/Si (001) films. The crystallographic texture of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and ex situ by x-ray diffraction and cross-sectional transmission electron Microscopy (XTEM). In particular, RHEED intensities were recorded during epitaxial growth, and intensity profiles across Bragg rods were used to calculate the surface lattice constant, and hence, find the critical epitaxial thickness for which Ni80Fe20 grows pseudomorphically on Cu (100). XTEM analysis indicated that the epitaxial films had atomically-abrupt interfaces which was not the case for polycrystalline Cu and Ni80Fe20 film interfaces. The Magnetic properties of these epitaxial films were Measured in situ using Magneto-optic Kerr effect magnetometry and were compared with those of polycrystalline films grown on SiO2/Si. Large Hc (∼ 35 Oe) was observed for epitaxial Ni80Fe20 films less than 3.0 nm thick whereas for increasing thickness, Hc decreased approximately monotonically to a few Oersteds. Correlations were made between magnetic properties of these epitaxial films, the strain in the film and the interface roughness obtained from XTEM analysis.

Synthesis of (SIC)3N4 Films by Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
C. Uslu ◽  
D. H. Lee ◽  
Y. Berta ◽  
B. Park ◽  
N. N. Thadhani ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Amorphous Layer ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Nitrogen Implantation ◽  
Transmission Electron ◽  
Position Sensitive ◽  
Nitrogen Ions ◽  
Substrate Temperatures ◽  
New Phase

ABSTRACTWe have investigated the synthesis of carbon-silicon-nitride compounds by ion implantation. In these experiments, 100 keV nitrogen ions were implanted into polycrystalline β-SiC (cubic phase) at various substrate temperatures and ion doses. These thin films were characterized in detail by x-ray diffraction with a position-sensitive detector, transmission electron microscopy with chemical analysis, and Rutherford backscattering spectroscopy. The as-implanted samples show a buried amorphous layer at a depth of 170 nm. The peak concentration of nitrogen saturates at approximately 45 at. % with doses above ~9.0×1017 N/cm2 at 860°C. These results suggest formation of a new phase by nitrogen implantation into β-SiC.

Structural Characterization of Heteroepitaxial 3C-SiC

2012 ◽  
Vol 711 ◽  
pp. 27-30 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Film Structure ◽  
Material Structure ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Crystallographic Defects ◽  
Sic Film ◽  
Sic Films

In this work, we focus our attention on the characterization of 3C-SiC films, grown within a CVD reactor, on Si substrates. It will be shown how the growth procedures influence the SiC film structure and quality with the growth rate used during the growth used as example. Evaluation of crystal structure has been conducted by X-Ray Diffraction (XRD), Raman microscopy and Transmission Electron Microscopy (TEM). Overall film quality increases if films are grown under low growth rate conditions, thanks also to an important reduction in the density of micro-twins. The trend of the full widths at half maximum (FWHMs) of SiC rocking curves, considered good ‘quality indicator’ as their broadenings are affected by crystallographic defects, as a function of 3C-SiC thickness shows a saturated regime for very thick films, due to the saturation of stacking fault density after 50 μm of growth. This work wants to suggest a reasonable path for the characterization of the material structure that can be useful, anywhere and in any time, to assess if the morphology and microstructure of our films are satisfactory and to drive towards the desired improvement.

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