TiSi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. Mcguire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

AbstractTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Tisi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. McGuire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

ABSTRACTTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

Initial Evolution of Cobalt Silicides in The Cobalt/Amorphous-Silicon Thin Film System

1991 ◽  
Vol 230 ◽  
Author(s):  
Hideo Miura ◽  
En Ma ◽  
Carl V. Thompson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Silicon Thin Film ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Initial Evolution ◽  
Cobalt Silicides

AbstractThe initial phase formation sequence for reactions in cobalt/ amorphous-silicon multi-layer thin films has been investigated using a combination of differential scanning calorimetry, thin film X-ray diffraction, and transmission electron microscopy. Multilayer thin films with various overall atomic concentration ratios and various bilayer thicknesses were used in this study. It was found that crystalline CoSi is always the first phase to nucleate in the interdiffused amorphous layer which preexisted at the as-deposited coba It/amorphous-si licon interface. The CoSi nucleates at temperatures as low as about 530 K, but does not grow until the next phase, which is Co2 Si when excess Co is available, starts to nucleate and grow. The activation energy of the CoSi nucleation was found to be 1.-6±0.1 eV.

Relating mechanical testing and microstructural features of polysilicon thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 688-697 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Silicon Thin Films ◽  
Bulge Testing ◽  
Transmission Electron ◽  
Wide Range ◽  
Out Of Plane

Polycrystalline silicon thin films (polysilicon) have been deposited on single crystalline silicon substrates, and square and rectangular windows have been etched into these substrates using standard micromachining techniques. Pressure-displacement curves of the resulting polysilicon membranes have been obtained for these geometries, and this data has been used to determine the elastic constants E and v. The microstructural features of the films have been investigated by transmission electron microscopy (TEM) and x-ray diffraction. The grains were observed to be columnar and were found to have a 〈011〉 out-of-plane texture and a random in-plane grain orientation. A probabilistic model of the texture has been used to calculate the bounds of the elastic constants in the thin films. The results obtained from bulge testing (E = 162 ± 4 GPa and v = 0.20 ± 0.03) fall in the wide range of values previously reported for polysilicon and are in good agreement with the microsample tensile measurements conducted on films deposited in the same run as the present study (168 ± 2 GPa and 0.22 ± 0.01) and the calculated values of the in-plane moduli for 〈1103〉 textured films (E = 163.0–165.5 GPa and v = 0.221–0.239).

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

scholarly journals Retention Characteristics of CBTi144 Thin Films Explained by Means of X-Ray Photoemission Spectroscopy

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
G. Biasotto ◽  
A. Z. Simões ◽  
C. S. Riccardi ◽  
M. A. Zaghete ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Polar Axis ◽  
Photoemission Spectroscopy ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Coating Method ◽  
Retention Characteristics

CaBi4Ti4O15(CBTi144) thin films were grown on Pt/Ti/SiO2/Si substrates using a soft chemical solution and spin-coating method. Structure and morphology of the films were characterized by the X-ray Diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), Raman analysis, X-ray photoemission spectroscopy (XPS), and transmission electron microscopy (TEM). The films present a single phase of layered-structured perovskite with polar axis orient. Thea/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. XPS measurements were employed to understand the nature of defects on the retention behavior of CBTi144 films. We have observed that the main source of retention-free characteristic of the capacitors is the oxygen environment in the CBTi144 lattice.

Effects of Power Density and Thickness On Aluminum-Induced Crystallization of PECVD Amorphous Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Kendrick S Hsu ◽  
Jeremy Ou-Yang ◽  
Li P. Ren ◽  
Grant Z. Pan
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Reaction Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Temperature Scanning ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractThe effect of power density and thickness on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) formed with plasma enhanced chemical vapor deposition (PECVD) was studied by using N2-protected conventional furnace reaction and optical microscopy. With the deposition power density ranging from 0.05 to 1.00 W/cm2 and the thickness from 500 to 5000Å, it was found that a low power density as well as a large a-Si thickness could result in a decrease of activation energy and therefore a significant reduction of the AIC reaction temperature. Scanning and transmission electron microscopy and X-ray diffraction were used to check the crystallinity and quality of the AIC thin films. High quality polysilicon thin films were achieved at an AIC reaction temperature as low as 120°C.

Influence of Silicon Substrate Ion Implantation on the Subsequent Microstructure Evolution in Cobalt Silicide Films

1990 ◽  
Vol 202 ◽  
Author(s):  
Z. G. Xiao ◽  
J. W. Honeycutt ◽  
G. A. Rozgonyi
Keyword(s):  
Direct Evidence ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Transmission Electron ◽  
Amorphous Medium ◽  
Amorphous Si ◽  
The Difference ◽  
New Phase

ABSTRACTThe influence of amorphization of the Si substrate by Ge+ implantation on the microstructural evolution of CoSi2 thin films has been investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD) and four-point-probe measurement. While the silicide films formed on unimplanted or recrystallized Si were similar in formation kinetics, microstructure and resistivity, unique features were found for silicide films formed on amorphized Si. The phase transformation to CoSi2 on amorphized Si was considerably accelerated, the silicide grain size was smaller, and the CoSi2/Si interface was much smoother on the amorphized Si. Direct evidence of grain boundary diffusion induced silicide/Si interface roughness was obtained. The origin of the difference in both the microstructure and kinetics on different Si substrates is explained by the latent energy stored in amorphous Si, increasing the silicide nucleation rate. Weak XRD peaks and different texture were found for the CoSi2 formed on amorphized Si. The facts that the dominant diffusing species during CoSi2 formation is Co, and the new phase was developed in an amorphous medium are thought to be responsible for these phenomena.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

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