Interactions of Copper with Interlayer Dielectrics and Adhesion Promoters / Diffusion Barriers.

1990 ◽  
Vol 203 ◽  
Author(s):  
B. Arcot ◽  
Y.T. Shy ◽  
S.P. Murarka ◽  
C. Shepard ◽  
W.A. Lanford
Keyword(s):  
Melting Point ◽  
Specific Heat ◽  
Diffusion Barrier ◽  
Metal Film ◽  
Diffusion Barriers ◽  
Adhesion Promoter ◽  
Adhesion Promoters ◽  
Inorganic Oxides ◽  
Temperature Range ◽  
Dielectric Layers

ABSTRACTCopper with its high conductivity, specific heat and melting point (compared to Al), is being investigated as the interconnection metal for applications both on and off the chip. Such interconnection wirings will be seperated by the dielectric layers which could be either polymers or inorganic oxides like SiO2. In such applications an adhesion promoter, which may also work as a diffusion barrier, maybe used between the dielectric and the metal film. An investigation of the diffusion and interaction of Copper with such dielectrics and insulators has been carried out in the temperature range of 200 – 500 ºC. Specifically, interactions of Copper with SiO2'P—glass, Polyimidesiloxane and Magnesium are investigated. Results of these studies will be presented and discussed.

scholarly journals The Specific Heat of Saline Ice

1975 ◽  
Vol 14 (72) ◽  
pp. 459-465 ◽  
Author(s):  
Bharat Dixit ◽  
E. R. Pounder
Keyword(s):  
Theoretical Model ◽  
Melting Point ◽  
Specific Heat ◽  
Experimental Results ◽  
Temperature Range ◽  
Calorimetric Experiment

A calorimetric experiment was performed to determine empirically the dependence of the specific heat of ice with salinity 0-10‰ over the temperature range from –23° C to the melting point The experimental results agree with the theoretical model determined by Schwerdtfeger (1963) for calculating the specific heat except within several degrees of the melting point and for very pure ice.

scholarly journals The Specific Heat of Saline Ice

1975 ◽  
Vol 14 (72) ◽  
pp. 459-465 ◽  
Author(s):  
Bharat Dixit ◽  
E. R. Pounder
Keyword(s):  
Theoretical Model ◽  
Melting Point ◽  
Specific Heat ◽  
Experimental Results ◽  
Temperature Range ◽  
Calorimetric Experiment

A calorimetric experiment was performed to determine empirically the dependence of the specific heat of ice with salinity 0-10‰ over the temperature range from –23° C to the melting point The experimental results agree with the theoretical model determined by Schwerdtfeger (1963) for calculating the specific heat except within several degrees of the melting point and for very pure ice.

The Fusion Curve of Natural Rubber

1931 ◽  
Vol 4 (2) ◽  
pp. 211-212
Author(s):  
G. v. Susich
Keyword(s):  
Melting Point ◽  
Specific Gravity ◽  
Natural Rubber ◽  
Specific Heat ◽  
Light Absorption ◽  
Temperature Range

Abstract Katz has shown that the melting point of frozen raw rubber is 35°–38° C. when determined by the disappearance of the crystal interferences upon warming. The discontinuous changes in the specific gravity, in the hardness, and in the light absorption, as well as the γ-anomaly of the specific heat, lie within this temperature range.

Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO2 Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Eric Kirchner ◽  
S.P. Murarka ◽  
E. Eisenbraun ◽  
A. Kaloyeros
Keyword(s):  
Electrical Resistivity ◽  
Corrosion Resistance ◽  
Diffusion Barrier ◽  
Diffusion Barriers ◽  
Thin Layers ◽  
Thermal Treatments ◽  
Adhesion Promoter ◽  
Electrical Bias

ABSTRACTIn a copper-SiO2 dielectric multilevel interconnection scheme a diffusion barrier is needed between the metal and the dielectric to prevent the diffusion of Cu into SiO2 when subjected to thermal treatments and high electric bias. Ultra thin layers (50–100Å) of Al and Ti are being investigated for use as the required diffusion barrier as well as an adhesion promoter between Cu and SiO2 The results of our investigations, using C-V, resistance, and XPS measurements, will be presented and discussed. It will be shown that both Al and Ti reduce the SiO2 surface leading to a metal, oxygen, and Si bonded layer which acts as diffusion barrier under applied electrical bias of 1.5 MV/cm at temperatures as high as 250–300°C. Upper layers of Al and Ti are consumed by reaction with Cu. Such reactions increase the electrical resistivity and corrosion resistance of Cu (especially with Al). The results and the applicability of such barriers in practical cases will be presented and discussed.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Specific heat of Teflon-40 and BF-2 glue in the 10?300�K temperature range

1972 ◽  
Vol 22 (4) ◽  
pp. 450-451 ◽  
Author(s):  
V. S. Krylovskii ◽  
V. I. Ovcharenko ◽  
V. I. Khotkevich
Keyword(s):  
Specific Heat ◽  
Temperature Range

THE COMBINED ANALYSIS OF SPECIFIC HEAT AND THERMAL EXPANSION OF Nd1−xLuxMn2 COMPOUNDS

1993 ◽  
Vol 07 (01n03) ◽  
pp. 810-813
Author(s):  
N.H. KIM-NGAN ◽  
P.E. BROMMER ◽  
J.J.M. FRANSE
Keyword(s):  
Magnetic Properties ◽  
Thermal Expansion ◽  
Thermodynamic Properties ◽  
Specific Heat ◽  
Crystal Field ◽  
Spin Fluctuation ◽  
Spin Reorientation ◽  
Antiferromagnetic Order ◽  
Combined Analysis ◽  
Temperature Range

Specific heat and thermal expansion measurements have been performed on Nd1−xLUxMn2 in the temperature range between 1.5K and 300K. Below 10K, anomalies are observed which are ascribed to a spin reorientation of the Nd sublattice. These anomalies are only slightly affected by the substitution of Nd by Lu. Large effects, however, are observed on the magnetic properties of the Mn sublattice. The antiferromagnetic order disappears for x exceeding 0.30. The data are analysed in terms of Grüneisen parameters. In the paramagnetic compound LuMn2, a spin-fluctuation contribution to the thermodynamic properties is observed. In the Nd-containing compounds, distinct contributions from the crystal field acting on the Nd ions can be distinguished. The variation of the magnetic properties of the Mn sublattice with the concentration of Lu is discussed.

Specific heats of polymer powders by differential scanning calorimetry

1982 ◽  
Vol 60 (14) ◽  
pp. 1853-1856 ◽  
Author(s):  
Eva I. Vargha-Butler ◽  
A. Wilhelm Neumann ◽  
Hassan A. Hamza
Keyword(s):  
Differential Scanning Calorimetry ◽  
Specific Heat ◽  
Scanning Calorimetry ◽  
Temperature Range ◽  
Specific Heats ◽  
Powdered Form ◽  
Polymer Powders

The specific heats of five polymers were determined by differential scanning calorimetry (DSC) in the temperature range of 300 to 360 K. The measurements were performed with polymers in the form of films, powders, and granules to clarify whether or not DSC specific heat values are dependent on the diminution of the sample. It was found that the specific heats for the bulk and powdered form of the polymer samples are indistinguishable within the error limits, justifying the determination of specific heats of powders by means of DSC.

An anomaly in the specific heat below 3 °K of copper containing hydrogen

1969 ◽  
Vol 47 (14) ◽  
pp. 1485-1491 ◽  
Author(s):  
Neil Waterhouse
Keyword(s):  
Specific Heat ◽  
Molecular Hydrogen ◽  
Pure Copper ◽  
Solid Hydrogen ◽  
Rotational State ◽  
Experimental Results ◽  
Ortho Hydrogen ◽  
Temperature Range ◽  
A Value ◽  
Heat Curve

The specific heat of copper heated in hydrogen at 1040 °C has been measured over the temperature range 0.4 to 3.0 °K and found to be anomalous. The anomaly occurs in the same temperature range as the solid hydrogen λ anomaly which, in conjunction with evidence of ortho to para conversion of hydrogen in the sample, suggests the presence of molecular hydrogen in the copper. The anomaly reported by Martin for "as-received" American Smelting and Refining Company (ASARCO) 99.999+ % pure copper has been briefly compared with the present results. The form of the anomaly produced by the copper-hydrogen specimen has been compared with Schottky curves using the simplest possible model, that for two level splitting of the degenerate J = 1 rotational state of the ortho-hydrogen molecule.Maintenance of the copper-hydrogen sample at ~20 °K for approximately 1 week removed the "hump" in the specific heat curve. An equation of the form Cp = γT + (464.34/(θ0c)3)T3 was found to fit these experimental results and produced a value for γ which had increased over that for vacuumannealed pure copper by ~2%.

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