TEM Evaluation of CuAu-I Type Ordered Structures in MBE grown Ingaas Crystals on (110) Inp Substrates

1990 ◽  
Vol 209 ◽  
Author(s):  
O. Ueda ◽  
Y. Nakata ◽  
T. Nakamura ◽  
T. Fujii
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Growth Surface ◽  
Ordered Structure ◽  
Phase Boundaries ◽  
Ordered Structures ◽  
Transmission Electron ◽  
Tilting Angle ◽  
High Resolution Images ◽  
Inp Substrates

ABSTRACTCuAu-I type ordered structures in InGaAs grown on (110) InP substrates by molecular beam epitaxy, have been studied by transmission electron microscopy. In the electron diffraction pattern from the InGaAs, superstructure spots associated withCuAu-I type ordered structure are found. When the tilting angle of the substrates increases, the ordering becomes stronger. The ordering is also stronger in crystals grown on substrates tilted toward the <001> or the <001> direction than those on substrates tilted toward the <110> direction. From these results, one can conclude that atomic steps on the growth surface play an important role in the formation of ordered structures. The ordering becomes stronger when the growth temperature increases in the range 360-485°C. In high resolution images of the crystal, doubling in periodicity of 220 and 200lattice fringes is found, which is associated with CuAu-I type ordered structure. Moreover, anti-phase boundaries are very often observed in the ordered regions. It is also found that ordering is not perfect, and that ordered regions are plate-like microdomains lying on planes slightly tilted from the (110) plane.

Ordering In Zn0.5Fe0.5Se Epilayers Grown on InP Substrates by Molecular Beam Epitaxy

1991 ◽  
Vol 231 ◽  
Author(s):  
L. Salamanca Riba ◽  
K. Park ◽  
B. T. Jonker
Keyword(s):  
High Resolution ◽  
Ordered Structure ◽  
Cross Sectional ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Lattice Images ◽  
High Resolution Images ◽  
Diffraction Patterns ◽  
Inp Substrates ◽  
Image Simulations

AbstractWe have observed an ordered structure in Zn0.5Fe0.5Se epilayers grown on (001) InP substrates using transmission electron microscopy. The ordered structure of Zn0.5Fe0.5Se has Fe atoms occupying the (0,0,0) and (½, ½, 0) sites and Zn atoms occupying the (0, ½, ½) and (½, 0, ½) sites in the zinc-blende unit cell. Ordering is observed in both electron diffraction patterns and cross-sectional high-resolution lattice images along the < 100 > and < 110 > directions. This ordered structure consists of alternating ZnSe and FeSe monolayers along the < 100 > and < 110 > directions. Computer image simulations of the high-resolution images under various thicknesses, and defocusing conditions have been obtained and are compared with those obtained experimentally.

The Structure of Dislocations in GaN Grown by MBE as a Function of the Gallium to Nitrogen Ratio

2003 ◽  
Vol 798 ◽  
Author(s):  
Marcus Q. Baines ◽  
David Cherns ◽  
Sergei V. Novikov ◽  
Michael J. Manfra ◽  
C. Thomas Foxon
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Fundamental Property ◽  
Growth Surface ◽  
Force Microscopy ◽  
The Core ◽  
Weak Beam ◽  
Atomic Force ◽  
Transmission Electron ◽  
Nitrogen Ratio

ABSTRACTTransmission electron microscopy (TEM) and atomic force microscopy (AFM) have been used to analyse the core structure of dislocations in GaN grown by molecular beam epitaxy (MBE) as a function of the gallium to nitrogen ratio. Ga-rich samples had a much smoother morphology; TEM observations showed that amorphous deposits decorated some dislocations and occasional surface pits, but weak beam and end-on imaging suggested that, away from the growth surface, dislocations of all types had closed core structures, in contrast to previous observations (Hsu et al, Appl. Phys. Lett. 78, 3980 (2001), Baines et al, Mat. Res. Soc. Symp. Proc. 743, L2.5 (2003)). Ga-poor samples were found to have much rougher surfaces; dislocations were often at the centers of deep surface pits but were observed to be undecorated and to have closed core structures. It is concluded that in growth under Ga-rich conditions, decoration of dislocation cores depends on the accumulation of Ga at surface pits, rather than being a fundamental property of dislocation formation.

TEM Studies of Alloy Clustering in InAlAs Strained Layers

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J. R. Morante ◽  
S. A. Clark ◽  
R. H. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Strained Layers ◽  
Transmission Electron ◽  
Quasiperiodic Structure ◽  
Sample Characteristics ◽  
Inp Substrates

ABSTRACTTransmission electron microscopy studies have been performed to characterise InxAl1−xAS layers grown by Molecular Beam Epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics such as strain, thickness and x value.

Tem Study of the Accidental Modulation of Mbe Grown AlxGal-x As

1986 ◽  
Vol 82 ◽  
Author(s):  
E.G. Britton ◽  
W.M. Stobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Long Range ◽  
Molecular Beam ◽  
Ordered Structure ◽  
Transmission Electron

ABSTRACTComposition modulations with a wavelength of -1-3 nm have been observed by transmission electron microscopy in nominally uniform AlxGa1-x As grown by molecular beam epitaxy. We describe the characterisation of this phenomenon and discuss its possible origins, in the light of the reported existence of a long range ordered structure.

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Herms ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Transmission Electron Microscope Study of An Ordered Structure in GaAs0.5 Sb0.5 Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. E. Ihm ◽  
N. Otsuka ◽  
Y. Hirotsu ◽  
J. Klem ◽  
H. Morkoc
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Ordered Structure ◽  
Domain Structures ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Diffraction Patterns

ABSTRACTThe ordered structure in a (100) GaAs0.5 Sb0.5 epilayer grown by molecular beam epitaxy has been studied by transmission electron microscopy. Domain structures are observed in dark field images of superstructure reflections. The ordered structure is derived by the analysis of diffraction patterns taken from single domains. The ordered structure is described as an alternate stacking of As and Sb planes in the <111> direction of the FCC sublattice. The alternate stacking of As and Sb plane is directly observed by high resolution electron microscopy.

Structural Studies Of (ZnSe/FeSe) Superlattices By Transmission Electron Microscopy

1991 ◽  
Vol 238 ◽  
Author(s):  
K. Park ◽  
L. Salamanca-Riba ◽  
B. T. Jonker
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Misfit Strain ◽  
Structural Studies ◽  
Ordered Structure ◽  
Chemical Ordering ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTThe structural properties of (ZnSe/FeSe) superlattices, grown with and without a ZnSe buffer layer on (001) G a As substrates by molecular beam epitaxy, have been studied by transmission electron microscopy. High quality (ZnSe/FeSe) superlattices are obtained when grown on a ZnSe buffer layer on (001) GaAs substrates. In contrast, nominal (ZnSe/FeSe) superlattices grown directly on (001) GaAs substrates without a buffer layer showed evidence for intermixing of the layers in the superlattice indicating that the superlattice is unstable. We observed a disordered structure and an ordered structure in the resulting Zn1−xFexSe solid solution. The ordered structure corresponds to chemical ordering of Zn and Fe atoms along the < 100 > and < 110 > directions. We have studied the effect of misfit strain in the (ZnSe/FeSe) superlattices on the film quality.

Automatic Registering and Stitching of TEM/STEM Image Mosaics

2013 ◽  
Author(s):  
Chung-Ching Lin ◽  
Franco Stellari ◽  
Lynne Gignac ◽  
Peilin Song ◽  
John Bruley
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Vlsi Circuit ◽  
Significant Progress ◽  
Research Areas ◽  
Automated Method ◽  
Transmission Electron ◽  
Stem Image ◽  
High Resolution Images ◽  
Global Optimal

Abstract Transmission Electron Microscopy (TEM) and scanning TEM (STEM) is widely used to acquire ultra high resolution images in different research areas. For some applications, a single TEM/STEM image does not provide enough information for analysis. One example in VLSI circuit failure analysis is the tracking of long interconnection. The capability of creating a large map of high resolution images may enable significant progress in some tasks. However, stitching TEM/STEM images in semiconductor applications is difficult and existing tools are unable to provide usable stitching results for analysis. In this paper, a novel fully automated method for stitching TEM/STEM image mosaics is proposed. The proposed method allows one to reach a global optimal configuration of each image tile so that both missing and false-positive correspondences can be tolerated. The experiment results presented in this paper show that the proposed method is robust and performs well in very challenging situations.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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