Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments

1991 ◽  
Vol 222 ◽  
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Growth Mechanisms ◽  
Depth Profiles ◽  
Scanning Auger Microscopy ◽  
Dominant Process ◽  
Au Thin Films ◽  
Auger Microscopy

ABSTRACTABSTRACT Au thin films were deposited using electron beam evaporation onto the surface of Nb metal to serve as thin film markers to study the growth mechanisms of NbS2 scales. Scanning Auger microscopy (SAM) was used to measure the depth profiles for the compositions of Au, Nb, S, Si and O across the sulfide scale. Three other marker experiments were also studied. All four marker experiments indicated that the inward diffusion of sulfur is the dominant process responsible for the growth of NbS2 scales.

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

2015 ◽  
Vol 9 (3) ◽  
pp. 2453-2460 ◽  
Author(s):  
Reza Shakouri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Sio2 Thin Film ◽  
Al2o3 Films ◽  
Beam Technique ◽  
Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.  The packing density of the samples is studied by change in the spectrum of a coating with humidity

High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application

2010 ◽  
Vol 93-94 ◽  
pp. 545-548
Author(s):  
B. Saekow ◽  
S. Porntheeraphat ◽  
Sakon Rahong ◽  
S. Jaruvanawat ◽  
J. Nukeaw
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Electron Beam ◽  
Photonic Crystal ◽  
Optical Measurement ◽  
High Refractive Index ◽  
Electron Beam Evaporation ◽  
Dielectric Thin Film ◽  
Thin Film Layer

The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum
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