High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application

2010 ◽  
Vol 93-94 ◽  
pp. 545-548
Author(s):  
B. Saekow ◽  
S. Porntheeraphat ◽  
Sakon Rahong ◽  
S. Jaruvanawat ◽  
J. Nukeaw
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Electron Beam ◽  
Photonic Crystal ◽  
Optical Measurement ◽  
High Refractive Index ◽  
Electron Beam Evaporation ◽  
Dielectric Thin Film ◽  
Thin Film Layer

The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

scholarly journals Influences of Oxygen Ion Beam on the Properties of Magnesium Fluoride Thin Film Deposited Using Electron Beam Evaporation Deposition

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 834 ◽  
Author(s):  
Gong Zhang ◽  
Xiuhua Fu ◽  
Shigeng Song ◽  
Kai Guo ◽  
Jing Zhang
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Electron Beam ◽  
Color Center ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Magnesium Fluoride ◽  
High Porosity ◽  
Oxygen Ion ◽  
Wide Range

Magnesium fluoride (MgF2) materials are commonly used for near/medium infrared anti-reflection optical coatings due to their low refractive index and wide-range transparency. Ion assistant deposition is an important technique to increase the density of MgF2 and reduce absorption around 2.94 µm caused by high porosity and moisture adsorption. However, the excessive energy of Argon ion will induce a color center and; therefore, lead to UV/Visible absorption. In this paper, oxygen ion was introduced to reduce the color center effect in MgF2 thin film deposited using electron beam evaporation with ion assistant. The films were deposited on Bk7 and single crystal silicon substrates under various oxygen ion beam currents. The microstructure, optical constant, film density, stress, and adhesion are investigated, including the absorption properties at the infrared hydroxyl (–OH) vibration peak. The results show that as the oxygen ion beam current increases, the absorption value at the position of the infrared OH vibration, defects, and stress of the film decrease, while the refractive index increases. However, MgF2 has poor adhesion using oxygen ion-assisted deposition. Thin MgF2 film without ion beam assistant was used as adhesive layer, high density, and low absorption MgF2 film with good adhesion was obtained.

High refractive index TiO2film deposited by electron beam evaporation

2009 ◽  
Vol 25 (3) ◽  
pp. 257-260 ◽  
Author(s):  
J. K. Yao ◽  
H. L. Huang ◽  
J. Y. Ma ◽  
Y. X. Jin ◽  
Y. A. Zhao ◽  
...  
Keyword(s):  
Refractive Index ◽  
Electron Beam ◽  
High Refractive Index ◽  
Electron Beam Evaporation

Study Of The Growth Mechanisms of NbS2 Scales Using Marker Experiments

1991 ◽  
Vol 222 ◽  
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Growth Mechanisms ◽  
Depth Profiles ◽  
Scanning Auger Microscopy ◽  
Dominant Process ◽  
Au Thin Films ◽  
Auger Microscopy

ABSTRACTABSTRACT Au thin films were deposited using electron beam evaporation onto the surface of Nb metal to serve as thin film markers to study the growth mechanisms of NbS2 scales. Scanning Auger microscopy (SAM) was used to measure the depth profiles for the compositions of Au, Nb, S, Si and O across the sulfide scale. Three other marker experiments were also studied. All four marker experiments indicated that the inward diffusion of sulfur is the dominant process responsible for the growth of NbS2 scales.

Characterizations of Electron Beam Evaporated Silicon Thin Films on Plastic Substrates for Solar Cells Applications

2014 ◽  
Vol 925 ◽  
pp. 543-547
Author(s):  
P.C. Ang ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Solar Cells ◽  
Low Cost ◽  
Plastic Substrates ◽  
X Ray ◽  
Intrinsic Nature ◽  
Silicon Thin Films ◽  
Thin Film Layer

Samples of thin film silicon (Si) on low cost polyethylene terephthalate (PET) plastic substrates were prepared by electron beam (e-beam) evaporation technique. Five samples of different thicknesses were deposited. Structural, optical, surface morphology and electrical characterizations were then carried out on these samples by energy dispersion X-ray (EDX) spectroscopy, high resolution X-ray diffraction (HR-XRD), UV spectrophotometer, atomic force microscopy (AFM) and four-probe meter. EDX spectra for these as-evaporated Si thin films on PET showed that the peak at 1.7398 eV belongs to Si atom which confirms the existence of the Si thin film layer. HR-XRD result showed that the chosen sample was highly amorphous. The transmission and reflection were carried out from wavelength 200 nm to 2000 nm and the optical band gap of the samples was calculated by Taucs relations. The root mean square (RMS) of surface roughness was low (smooth morphology) and found to be independent to the thickness of the film. The films were found to be highly resistive due to their intrinsic nature (no doping applied during the deposition). The effects of the properties towards thin film solar cells fabrication were subsequently discussed.

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