The Measurement of Thermal Conductivity of Ag/Al Multilayered Films

1991 ◽  
Vol 229 ◽  
Author(s):  
Takeshi Kaizuka ◽  
We-Hyo Soe ◽  
Ryoichi Yamamoto ◽  
Masanori Ohyama

AbstractThe in-plane thermal conductivity of Ag/Al multilayered films was measured at room temperature by ac calorimetric method as a function of the modulation wavelength and was compared with the electrical conductivity. The electrical conductivity increases with wavelength, Λ, like other metallic multilayered films. The thermal conductivity also tends to increase with Λ, but the Λ dependence is not similar to that of electrical conductivity. Obtained Lorentz number value of the multilayers are almost 10–30% larger than that given by the free electron theory. The Wiedemann-Franz law did not hold in the Ag/Al films and the phonon contribution is not negligible.

2012 ◽  
Vol 501 ◽  
pp. 319-323
Author(s):  
Hasan A. Alwi ◽  
Lay S. Ewe ◽  
Zahari Ibrahim ◽  
Noor B. Ibrahim ◽  
Roslan Abd-Shukor

We report the room temperature thermal conductivity κ and thermal diffusivity α of polycrystalline La0.7Ca0.3-xSrxMnO3 for x = 0 to 0.1. The samples were prepared by heating at 1220 and 1320oC. The insulator-metal transition temperature, TIM and thermal diffusivity increased with Sr content. Phonon was the dominant contributor to thermal conductivity and the electronic contribution was less than 1%. Enhancement of electrical conductivity σ and thermal diffusivity for x ≥ 0.08 was observed in both series of samples. The grain size of the samples (28 to 46 µm) does not show any affect on the thermal and electrical properties.


In a previous investigation it was found that the unusually high value for the Wiedemann-Franz ratio of tellurium could be explained as being only a formal anomally. The amount of heat transferred by the bound atoms is the same in tellurium as in conducting metals; but, in tellurium, in contrast to good conductors, it is responsible for almost the entire heat conductivity because the heat transferred by the free electrons is especially small. This indicates that tellurium differs from true metals in that the density of free electrons is very small. Classical statistics is therefore applicable and the electrical conductivity is given by x = 4/3 e 2 ln (2 πmk T) -5/9 , (1) where n is the density of free (conduction) electrons and l is their mean free path. Taking the specific resistance of tellurium at room temperature as 0.3 ohm-cm and l as 5.2 X 10 -6 cm (Sommerfeld's value for silver, found by applying Fermi-Dirac statistics), n is 2.9 X 10 16 , or about one free electron per million tellurium atoms in contrast to good conductors in which there is approximately one free electron per atom. Even in the limiting case with l = 3.2 X 10 -3 cm (the distance between the tellurium atoms), n is 4.7 X 10 18 which is about one free electron for every 6000 tellurium atoms.


2014 ◽  
Vol 809-810 ◽  
pp. 3-8
Author(s):  
Peng Xian Lu

In order to increase the electrical conductivity greatly but maintain a large Seebeck coefficient and a low thermal conductivity simultaneously, the binary-phased LaCeFe3CoSb12-Sb nanocomposites composed of LaCeFe3CoSb12skutterudite nanospheres and semimetal Sb microsized ribbons were fabricated via a hydro/solvo thermal route. The results suggest that the Sb powders result in a disordered structure during a hot-press process at its melting-point temperature and the disordered structure has been partly preserved into the room-temperature materials successfully. The Sb microsized ribbons enhance the electrical conductivity of the binary-phased materials largely, meanwhile the disordered structure increases the Seebeck coefficient obviously even though the thermal conductivity is also increased slightly. Consequently, the figure of merit of the binary-phased materials is improved significantly and the maximum value of 1.54 at 773 K has been realized for the LaCeFe3CoSb15material.


2014 ◽  
Vol 07 (03) ◽  
pp. 1450032 ◽  
Author(s):  
Degang Zhao ◽  
Min Zuo ◽  
Zhenqing Wang ◽  
Xinying Teng ◽  
Haoran Geng

The Ta -doped ZrNiSn half-Heusler alloys, Zr 1-x Ta x NiSn , were synthesized by arc melting and hot-press sintering. Microstructure of Zr 1-x Ta x NiSn compounds were analyzed and the thermoelectric (TE) properties of Zr 1-x Ta x NiSn compounds were measured from room temperature to 823 K. The electrical conductivity increased with increasing Ta content. The Seebeck coefficient of Zr 1-x Ta x NiSn compounds was sharply decreased with increasing Ta content. The Hall mobility was proportional to T-1.5 above 673 K, indicating that the acoustic phonon scattering was predominant in the temperature range. The thermal conductivity was effectively depressed by introducing Ta substitution. The figure of merit of ZrNiSn compounds was improved due to the decreased thermal conductivity and increased electrical conductivity. The maximum ZT value of 0.60 was achieved for Zr 0.97 Ta 0.03 NiSn sample at 823 K.


2000 ◽  
Vol 626 ◽  
Author(s):  
M. Fornari ◽  
D. J. Singh ◽  
I. I. Mazin ◽  
J. L. Feldman

ABSTRACTThe key challenges in discovering new high ZT thermoelectrics are understanding how the nearly contradictory requirements of high electrical conductivity, high thermopower and low thermal conductivity can be achieved in a single material and based on this identifying suitable compounds. First principles calculations provide a material specific microscopic window into the relevant properties and their origins. We illustrate the utility of the approach by presenting specific examples of compounds belonging to the class of skutterudites that are or are not good thermoelectrics along with the microscopic reasons. Based on our computational exploration we make a suggestion for achieving higher values of ZT at room temperature in bulk materials, namely n-type La(Ru,Rh)4Sb12 with high La-filling.


2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


Alloy Digest ◽  
1987 ◽  
Vol 36 (2) ◽  

Abstract Copper No. C80100 is a casting copper with high electrical conductivity (100% IACS). It has low room-temperature strength and hardness and medium-to-good ductility. It has excellent thermal conductivity and good resistance to corrosion, these characteristics make it highly suitable for many applications requiring good electrical and or thermal conductivity and resistance to corrosion and oxidation. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as casting, heat treating, machining, joining, and surface treatment. Filing Code: Cu-521. Producer or source: Copper alloy foundries.


2000 ◽  
Vol 14 (25n27) ◽  
pp. 2908-2913 ◽  
Author(s):  
M. PUTTI ◽  
C. FERDEGHINI ◽  
G. GRASSO ◽  
W. GOLDACKER ◽  
P. VASE

In this paper we present measurements of thermal and electrical conductivity performed on several alloys and composite alloys tipically used as sheaths of BSCCO tapes: AgAu, AgMg, AgAu-AgMg. The thermal conductivity of the alloys is analysed in terms of electron and phonon contribution and we emphasize that in not dilute alloys the phonons contribute largely to the heat transport. In order to reduce the overall thermal conductivity, this latter contribution has to be minimized.


2016 ◽  
Vol 16 (4) ◽  
pp. 3841-3847 ◽  
Author(s):  
Lijie Guo ◽  
Zhengwei Cai ◽  
Xiaolong Xu ◽  
Kunling Peng ◽  
Guiwen Wang ◽  
...  

p-type skutterudites NdxFe3CoSb12 with x equaling 0.8, 0.85, 0.9, 0.95, 1.0 have been synthesized by solid state reaction followed by spark plasma sintering. The influence of Nd filling on electrical and thermal transport properties has been investigated in the Nd-filled skutterudite compounds in the temperature range from room temperature to 800 K. It was found that the Seebeck coefficient is drastically enhanced via filling Nd in p-Type skutterudites as well as the corresponding power factor although electrical conductivity is reduced. In addition, a large reduction in thermal conductivity is achieved by Nd fillers through rattling effect along with the In-Situ nanostructured precipitate through scattering phonons with much wider frequency. These concomitant effects result in an enhanced thermoelectric performance with the dimensionless figure of merit ZT. These observations demonstrate an exciting scientific opportunity to raise the figure-of-merit of p-type skutterudites.


1998 ◽  
Vol 553 ◽  
Author(s):  
F. Cyrot-Lackmann

Stable quasicrystals exhibit specific and unusual physical properties, such as, diamagnetism, low electrical conductivity, low thermal conductivity, and large themoelectric power at room temperature. These properties can be understood with a Bragg's reflexions scheme due to their dense filled reciprocal space.This leads to small gaps on the Fermi surface (some tenths of eV), much narrower than the usual Hume-Rothery ones (of order of 0.5 eV) which explain their stability. These gaps lead to the existence of quasi Umklapp processes, crucial for the interpretation of thermoelectric power. In some cases, the positive phonon drag contribution due to Umklapp processes, add with the electronic one's and dominates at room temperature with a large positive thermoelectric power. A crude estimate of the figure of merit gives some hope for applications of some quasicrystals and high approximants as new thermoelectric materials.


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