Novel Paths for Nucleatton and Growth of Thin Films by Ionized Cluster Beam (ICB) Techniques: Atomic-Scale Observations

1991 ◽  
Vol 235 ◽  
Author(s):  
I. Yamada ◽  
T. Yamada ◽  
G. H. Takaoka ◽  
H. Usui ◽  
M. I. Current
Keyword(s):  
Thin Films ◽  
Atomic Beam ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Properties ◽  
Early Stages ◽  
Detailed Composition ◽  
Large Clusters

ABSTRACTAtomic-scale observations by STM and TEM of the early stages of film growth and recent studies of the detailed composition of beams from ICB sources have led to new understandings of origins of some of the extraordinary properties of thin films deposited by ICB methods. The presence of a small fraction of atoms in the form of large clusters initiates a novel sequence of film growth steps starting with the immediate formation of stable islands for film growth. The growth of films from cluster-initiated islands leads to fundamentally altered film properties (compared to atomic beam, MBE, deposition) such as the epitaxial alignment of metal/semiconductor/ceramic multilayers grown near room temperature.

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Supersonic Cluster Beam Synthesis of Nanophase Materials

1999 ◽  
Vol 581 ◽  
Author(s):  
P. Milanil ◽  
S. Iannotta ◽  
F. Biasioli ◽  
P. Piseri ◽  
E. Barborini
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tini Alloy ◽  
Cluster Beam ◽  
Crystallite Sizes ◽  
Nanophase Materials ◽  
Cluster Beams ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTWe present the characterization of supersonic cluster beam deposition as a viable technique for the synthesis of nanostructured materials. Stable and intense cluster beams can be obtained with a pulsed microplasma cluster source. This technique has been applied to produce TiNi nanostructured thin films on various substrates at room temperature. The morphology and the structure of the film are strongly influenced by the precursor clusters. Films characterized by crystallite sizes of a few tens of nanometers can be grown without recrystallization by thermal annealing. The stoichiometry of the original TiNi alloy is maintained.

Thin Film Deposition and Growth Processes by Ionized Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Cluster Beam ◽  
Film Nucleation ◽  
Cluster Beams

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.

Production of Ultra-Thin Metal Films Using Neutral Cluster Beams

1990 ◽  
Vol 206 ◽  
Author(s):  
A. Ramachandra ◽  
M. Vaziri ◽  
R.P. Andres
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Vacuum Chamber ◽  
Metal Films ◽  
Gold Clusters ◽  
Cluster Beam ◽  
Neutral Cluster ◽  
Finite Electrical Conductivity ◽  
Cluster Beams

ABSTRACTGold clusters (diam. = 1.0 ± .5 nm) are prepared in a gas aggregation source (MECS), expanded into a vacuum chamber to form a neutral cluster beam, and deposited at low impact velocity on room temperature substrates. When several monolayers of these clusters are deposited on clean substrates (nitrocellulose, glass, mica, NaCl), they form smooth ultra-thin films. These cluster-assembled films appear to be similar in quality to those produced by the Takagi-Yamada ion cluster beam process. They exhibit finite electrical conductivity at thicknesses much smaller than is the case with atomically evaporated films. They are extremely uniform and smooth with a surface height that typically varies less than 1 nm across the entire film.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Microstructure of thin YBa2Cu3O7−δ films

1990 ◽  
Vol 48 (4) ◽  
pp. 8-9
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Weak Link ◽  
Critical Currents ◽  
Weak Links ◽  
High Tc ◽  
Fundamental Interest ◽  
Early Stages ◽  
Transmission Electron ◽  
Patterned Films

The microstructure of superconducting thin-films often strongly influences their electrical properties. The actual microstructure of the film will be dependent on the nucleation and early stages of film growth, although the substrate will also be expected to exert an influence during the early stages of growth by the establishment of epitaxy. The highest critical currents have been obtained with films grown on SrTiO3, however MgO is of fundamental interest because patterned films on MgO have been shown to possess Josephson weak-link structure. The presence of the Josephson weak-links has been correlated with the occurrence of misaligned grains in films grown on MgO. Ultra-thin films of high-Tc superconductors are of interest for understanding the properties of these materials and may also be of use in technical applications.The microstructure of ultra-thin YBa2Cu3O7−δ films prepared by pulsed-laser ablation onto (001)- oriented MgO has been studied using transmission electron microscopy (TEM) and selected-area diffraction (SAD).

Early Stages of Growth of BaTiO3 Thin-Films

1990 ◽  
Vol 200 ◽  
Author(s):  
M. Grant Norton ◽  
Gerald R. English ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Surface Preparation ◽  
Thin Foil ◽  
Stages Of Growth ◽  
Early Stages ◽  
Transmission Electron ◽  
Film Nucleation

ABSTRACTBarium titanate (BaTiO3) is of interest for use in a number of thin-film applications in electronic and optoelectronic devices. For these devices the formation of epitactic films of the correct stoichiometry and phase is essential. The substrate is important during the early stages of growth in the establishment of epitaxy, factors such as lattice mismatch, surface preparation and crystallographic orientation can all affect film nucleation and growth. In this study thin-films of BaTiO3 have been formed using the pulsed-laser ablation technique. The early stages of film growth have been studied directly using transmission electron microscopy by examination of very thin films deposited onto specially prepared electron-transparent thin-foil substrates.

Effects of electron-beam irradiation and substrate temperature on the physical properties of evaporated a-Si:C thin films

1985 ◽  
Vol 63 (6) ◽  
pp. 838-841 ◽  
Author(s):  
R. D. Audas ◽  
C. J. L. Moore ◽  
T. E. W. Sturtevant ◽  
G. W. Johnson ◽  
J. D. Leslie ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Vitreous Carbon ◽  
Beam Irradiation ◽  
Film Properties ◽  
Temperature Activation ◽  
Substrate Temperatures ◽  
Reference Samples

Thin films of a-Si:C have been prepared by thermal evaporation from resistive- and rf-induction-heated carbon crucibles. Samples were prepared with and without electron-beam irradiation of the substrate during deposition, and the resulting film properties (electrical and optical) were measured. Reference samples prepared with substrate temperatures from 150 to 250 °C and annealing temperatures from 200 to 250 °C had very similar film properties. The use of vitreous carbon instead of compressed carbon for the crucibles reduced the carbon content by about 30% and the oxygen content of the films by more than a factor of four. Electron-beam irradiation of the purer films produced a tenfold decrease in the conductivity at room temperature and an increase of the high-temperature activation energies compared with the reference samples.

Room-Temperature Deposition of ZnO Thin Films by Using DC Magnetron Sputtering

2014 ◽  
Vol 896 ◽  
pp. 237-240 ◽  
Author(s):  
Putut Marwoto ◽  
Sulhadi ◽  
Sugianto ◽  
Didik Aryanto ◽  
Edy Wibowo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Film Growth ◽  
Transparent Conductive Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Plasma Power ◽  
Zno Film ◽  
Dc Magnetron Sputtering

ZnO thin films have successfully been deposited using DC magnetron sputtering at room temperature by means of plasma power variation. XRD results show that films were grown at a plasma power of 30 W and 40 W are polycrystalline, while at 20 W is considered as amorphous. The optical bandgap of films are shrinkage by increasing the plasma power. The broadest transmittance range is belongs to ZnO film growth at plasma power of 40 W. The electrical conductivity of ZnO films increase from 4.02x10-7(Ωcm)-1to 8.92x10-7(Ωcm)-1once the plasma power is increased. Based on the electrical and optical properties of the films it clearly be seen that ZnO film grown at plasma power of 40 W has highest transmittance and lower electrical resistivity therefore it appropriate for transparent conductive oxide (TCO).

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