Undoped and Doped Perovskite Films: Sol-Gel Processing and Characterization

1991 ◽  
Vol 243 ◽  
Author(s):  
Mareike Klee ◽  
Rainer Waser
Keyword(s):  
Crystal Structure ◽  
Field Strength ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Insulation Resistance ◽  
Sol Gel Process ◽  
Gel Processing

AbstractThin undoped Pb(ZrxTi1−x)O3 (x=0.2-0.75), BaTiO3, SrTiO3 as well as acceptor (Mn, Ni) and donor (La, Ce) doped films with thicknesses of 0.2-1 μm have been deposited by a modified sol-gel process. The crystal structure and the morphology of the films as a function of the processing and composition were analyzed. The films were characterized with respect to their ferroelectric and dielectric properities e.g. permittivity, remanent polarization, coervice field strength, insulation resistance.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Sol-Gel Process form Heterometallic Alkoxides to Incorporate Alkaline- and Rare Earths in Alumina for automotive Applications

1996 ◽  
Vol 431 ◽  
Author(s):  
C. K. Narula
Keyword(s):  
Elevated Temperatures ◽  
Sol Gel ◽  
Automotive Applications ◽  
Automotive Catalysts ◽  
Heterometallic Alkoxides ◽  
Sol Gel Process ◽  
Alkaline Earths ◽  
Cost Of Materials ◽  
Gel Processing

AbstractThe high cost of materials prepared by sol-gel processing and the loss of useful surface properties at elevated temperature has prevented the application of sol-gel processed materials in automotive exhaust reduction catalyst formulations. In this report, we briefly describe the important developments needed in the next generation automotive catalysts and the role of sol-gel processed materials. We will also discuss the application of heterometallic alkoxides as sol-gel precursors to achieve the molecular distribution of lanthanides and alkaline earths in alumina matrices needed for the stabilization of alumina based materials at elevated temperatures.

Fabrication and Ferroelectric Properties of Ba-Doped Strontium Bismuth Titanate Ceramics

2007 ◽  
Vol 280-283 ◽  
pp. 163-166
Author(s):  
Dan Xie ◽  
Wei Pan ◽  
Zhi Min Dang ◽  
Tian Ling Ren
Keyword(s):  
Electron Microscopy ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Molar Ratio ◽  
Sol Gel Process ◽  
Titanate Ceramics ◽  
Coercive Electric Field

In the paper, the microstructure and properties of Sr1-xBaxBi4Ti4O15 (SBBT) ceramics with different Ba contents were investigated. SBBT ceramics were fabricated by means of the method combining Sol-Gel process and ordinary firing. The morphology will change when Ba2+ is doped in SrBi4Ti4O15 (SBTi), which will lead to the change of structure and ferroelectric properties. The microstructure of SBTi and BaBi4Ti4O15 (BBTi) ceramics were characterized by scan electron microscopy (SEM). With the increase of Ba2+ doping contents, the sintering temperature of SBBT ceramics decreases, 1120°C for SBTi and 1060°C for BBTi. BBTi ceramics contain more and larger plate-like grains than that in SBTi, the diameter of the grains in BBTi is about 8~10 µm, the thickness is about 2.5 µm. With the increase of Ba2+ doping contents, remanent polarization (Pr) and coercive electric-field (Ec) increase first and then decrease. At the molar ratio of Sr:Ba=0.5:0.5, SBBT ceramics exhibited the highest Pr and Ec.

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

Fabrication and Characterization of Nanocrystalline NiO Prepared by Sol-Gel Process

2011 ◽  
Vol 194-196 ◽  
pp. 476-479
Author(s):  
Yu Cai ◽  
Zhao Yang Wu ◽  
Shen Li Zhao ◽  
Ji Ne Zhu
Keyword(s):  
Crystal Structure ◽  
Sol Gel ◽  
Chelating Agent ◽  
Constant Current ◽  
Treatment Technology ◽  
Sol Gel Process ◽  
Stable Performance ◽  
Li Ion ◽  
Constant Current Charging

The nano-NiO powder was prepared by sol-gel method combining heat treatment technology and its structure and morphology were explored. In addition, the NiO powder electrochemical properties were tested by constant current charging and discharging. The results show that the stable performance sol can be composed by nickel acetate as source of nickel and PAA as chelating agent. Nano-NiO powder of crystal structure integrity, particle uniformity can be prepared by the sol. The gel decomposes completely and gradually forms nanocrystal at 430οC. Its grain size is gradually increasing when the annealing temperature rise. The nano-NiO powder sintered at 600°C exhibits uniform particle, integrity crystal structure, low aggregation and superior electrochemistry performance and may be used in Li-ion battery as the anode material.

Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

2012 ◽  
Vol 602-604 ◽  
pp. 1461-1464
Author(s):  
Hua Wang ◽  
Li Liu ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Maximum Value ◽  
Processing Effects ◽  
Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

Ultrasmooth metal halide perovskite thin films via sol–gel processing

2016 ◽  
Vol 4 (21) ◽  
pp. 8308-8315 ◽  
Author(s):  
Ross A. Kerner ◽  
Lianfeng Zhao ◽  
Zhengguo Xiao ◽  
Barry P. Rand
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Sol Gel ◽  
Metal Halide ◽  
Film Morphology ◽  
Metal Halide Perovskite ◽  
Sol Gel Process ◽  
Thin Film Formation ◽  
Halide Perovskite ◽  
Gel Processing

We show that metal halide perovskite thin film formation is a sol–gel process which allows us to improve film morphology, achieving roughness ∼1 nm via process and additive engineering.

Preparation and Properties of Multiferroic La-Doped BiFeO3 Thin Film

2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Secondary Phases ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process ◽  
La Doped

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.

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