Preparation of Cross-Sectional TEM Samples of Fe-Zn Couples

1991 ◽  
Vol 254 ◽  
Author(s):  
L. A. Giannuzzi ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bidter
Keyword(s):  
Electron Microscope ◽  
Liquid Nitrogen ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Cold Stage ◽  
Transmission Electron

AbstractA preparation technique for the production of cross-sectional transmission electron microscope (TEM) samples from the interdiffusion regions of Fe-Zn binary couples is described. To alleviate the problem of unequal ion milling rates between the Fe and Zn, a 0.75mm thick Fe sheet has been double plated with a thick electrodeposited Zn coating to achieve a total couple thickness of ˜3mm. After slicing the couple in cross-section, the Fe region of the sample is dimpled to perforation near the Fe-Zn interface. Final thinning for TEM analysis is obtained by ion milling using a liquid nitrogen cold stage and sector speed control. The ion milling procedure is stopped when the perforated hole in the Fe-side of the couple extends through the faster eroding Zn-side of the interface. This technique, in modified form, is expected to be suitable for commercial steels coated with Zn-based alloys.

scholarly journals Rapid Cross-Section TEM Specimen Preparation of III-V Materials

2003 ◽  
Vol 11 (1) ◽  
pp. 29-32 ◽  
Author(s):  
R. Beanland
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Limited Resources ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Sample Type ◽  
Transmission Electron ◽  
Conventional Methods ◽  
The Cross

AbstractCross-section transmission electron microscope (TEM) specimen preparation of Ill-V materials using conventional methods can be a painful and time-consuming activity, with a day or more from receipt of a sample to examination in the TEM being the norm. This article describes the cross-section TEM specimen preparation technique used at Bookham Caswell. The usual time from start to finish is <1 hour. Up to 10 samples can be prepared at once, depending upon sample type. Most of the tools used are widely available and inexpensive, making the technique ideal for use in institutions with limited resources.

Transmission electron microscope observation of diamond / WC interface

1996 ◽  
Vol 54 ◽  
pp. 700-701
Author(s):  
Geun-Hong Kim ◽  
Chang-Hwan Chun
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cutting Tool ◽  
Nucleation And Growth ◽  
Interfacial Stress ◽  
Electron Microscope Observation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron Microscope Observation ◽  
Transmission Electron

Commercial diamond coated WC-Co cutting tool has been investigated by transmission electron microscope (TEM) to understand the nucleation and growth of diamond on WC substrate. Cross-sectional specimens have been prepared by mechanical polishing followed by ion milling. TEM observations have been performed using analytical TEM, JEM 4000FX (JEOL Ltd.).The surface of the coated diamond is composed of grains of 2 - 5 μm in diameter. Each main grain is formed by columnar subgrains of 10 - 50 nm in diameter with similar orientations. Cobalt, a binder in cemented carbide, within 5 μm in depth from the carbide surface has been found to be removed to increase the adhesion of diamond.One of diamond subgrains, which has been grown large in [001] orientation on WC grains is shown in Fig. 1. High density of twins are found on (111) plane starting from WC grain boundaries. It is thought that the interfacial stress between diamond layer and WC grains is accommodated by these twins.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Cross‐section transmission electron microscope observations of diamond‐turned single‐crystal Si surfaces

1994 ◽  
Vol 65 (20) ◽  
pp. 2553-2555 ◽  
Author(s):  
Takayuki Shibata ◽  
Atsushi Ono ◽  
Kenji Kurihara ◽  
Eiji Makino ◽  
Masayuki Ikeda
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Transmission Electron

Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2561-2564 ◽  
Author(s):  
Satoshi Ikeda ◽  
Masao Okihara ◽  
Hidetsugu Uchida ◽  
Norio Hirashita
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sectional ◽  
Gate Oxides ◽  
Transmission Electron
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