Improvement in the Activation Efficiency of Implanted Si in GaAs using Oxygen Plasma Pretreatment

1992 ◽  
Vol 259 ◽  
Author(s):  
Jaeshin Cho ◽  
Leszek M. Pawlowicz ◽  
Naresh C. Saha
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Gaas Surface ◽  
Oxygen Plasma Treatment ◽  
Surface Conditions ◽  
X Ray ◽  
Plasma Pretreatment ◽  
Activation Efficiency ◽  
Thick Oxide Layer

ABSTRACTWe have investigated the effect of GaAs surface conditions prior to plasma enhanced chemical vapor deposition of a silicon nitride cap on the activation efficiency of implanted Si in GaAs. The oxygen plasma treatment improved the activation efficiency of implanted Si by ∼35% over (1:10) NH4OH:H2O treatment. X-ray photoelectron spectroscopy (XPS) analysis of the oxygen plasma treated GaAs surface indicated the formation of ∼25Å thick oxide layer consisting of Ga2O3, As2O3, As2O5 and elemental As. During the activation anneal, the arsenic-containing oxides react with the GaAs substrate to form Ga2O3 and elemental As. The presence of excess As between the GaAs and the nitride cap film increases the probability that the implanted Si incorporates in the Ga sites over the As sites, and thereby improves the activation efficiency. This surface-related mechanism suggests that the variation in activation efficiency is mostly attributed to variation in surface conditions, and may explain the wide variety of reported values of activation efficiency.

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

2021 ◽  
Author(s):  
Wei Mao ◽  
shihao Xu ◽  
Haiyong Wang ◽  
Cui Yang ◽  
ShengLei Zhao ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Surface Oxide Layer ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Current Collapse ◽  
Effect Of Oxygen

Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

scholarly journals Experimental Study on the Laser Transmission Joining of Polystyrene and Titanium

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1513 ◽  
Author(s):  
Pin Li ◽  
Jing Li ◽  
Wensheng Tan ◽  
Huixia Liu ◽  
Xiao Wang
Keyword(s):  
Failure Mode ◽  
Photoelectron Spectroscopy ◽  
Joint Strength ◽  
Oxygen Plasma ◽  
Titanium Surface ◽  
Tensile Failure ◽  
Oxygen Plasma Treatment ◽  
Treatment Methods ◽  
X Ray ◽  
Joining Strength

To address the difficulty of joining polystyrene (PS) and titanium by laser transmission joining, two methods—laser treatment of the titanium surface and oxygen plasma treatment of the PS surface—are used to compare the laser transmission joint strengths of the different treatment methods. The results of the experiments find that joining with titanium can be achieved only when PS is treated with oxygen plasma. When the laser-treated surface of titanium is jointed to the oxygen plasma-treated PS, the joint strength is the highest, reaching 6.5 MPa. The joining mechanism of oxygen plasma-treated PS and laser oxidation-treated titanium was investigated by joint tensile failure mode, joint micromorphology observation, contact angle and surface free energy experiments, and X-ray photoelectron spectroscopy (XPS). The results show that the failure mode of the joint is an interfacial failure; the size and amount of bubbles play an important role in the joining strength, and the joints with fine and uniform bubbles have the highest joint strength. The two surface treatment methods can improve the surface energy of the joints, improve the compatibility between the two joining surfaces, and enhance the joint strength. Ti–C and Ti–O chemical bonds are formed at the joints, which are the main reason for the increase in joint strength.

X-Ray Photoemission Study of Silicon Nitride-GaAs Interfaces in Relation with GaAs Mesfet Passivation

1987 ◽  
Vol 98 ◽  
Author(s):  
Patrick Alnot ◽  
J. Olivier ◽  
F. Wyczisk ◽  
J. F. Peray ◽  
R. Joubart
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Excitation Frequency ◽  
Chemical Vapor ◽  
Gaas Surface ◽  
Surface Pretreatment ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Plasma Excitation ◽  
Photoemission Study

ABSTRACTWe have studied the influence of different GaAs surface treatments on the chemical composition and electrical behavior of the Si 3 N4 -GaAs interface, where Si 3 N4 was plasma enhanced chemical vapor deposited (PECVD) onto the treated GaAs(100) substrate. The chemistry of the resulting interface has been studied by X-ray photoelectron spectroscopy (XPS). It has been demonstrated that the chemical composition of the Si 3 N4-GaAs interface is drastically dependent on GaAs surface pretreatment and r.f. plasma excitation frequency. Output-input powers characteristics have been measured on chemically treated planar MESFET after Si3N4. passivation.

scholarly journals The Amorphization of Monolayer MoS2 Induced by Strong Oxygen Plasma Treatment

2019 ◽  
Vol 26 (2) ◽  
pp. 143-146
Author(s):  
Jian-Ling MENG ◽  
Jian-Qi ZHU ◽  
Shun-Tian JIA ◽  
Xiao REN
Keyword(s):  
Visible Light ◽  
Plasma Treatment ◽  
Raman Spectra ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Visible Light Photocatalysis ◽  
Monolayer Mos2 ◽  
X Ray ◽  
Raman Modes

By strong oxygen plasma treatment on monolayer MoS2, we observe the disappearance of the Raman modes of MoS2. We propose the hypothesis that the state of MoS2 translates from crystal to amorphous after strong oxygen plasma treatment. The evidences of no MoO3 formation shown by Raman spectra and the appearance of the Mo6+ peak and decreased O concentration shown by X-ray photoelectron spectroscopy support our hypothesis. The amorphization of monolayer MoS2 is further confirmed by the quenching of photoluminescence (PL) and the disappearance of two absorption peaks related to A, B exciton which demonstrates the disordered bandgap. Finally, we found that the amorphous MoS2 can improve the absorption fraction at the visible light (500~ 750 nm) which is potential for future visible light photocatalysis.

Oxygen plasma treatment of bamboo fibers (BF) and its effects on the static and dynamic mechanical properties of BF-unsaturated polyester composites

Holzforschung ◽  
2015 ◽  
Vol 69 (4) ◽  
pp. 449-455 ◽  
Author(s):  
Wendi Liu ◽  
Tingting Chen ◽  
Tianshun Xie ◽  
Fuwen Lai ◽  
Renhui Qiu
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Interfacial Adhesion ◽  
Oxygen Plasma ◽  
Unsaturated Polyester ◽  
Flexural Modulus ◽  
Oxygen Plasma Treatment ◽  
X Ray ◽  
Dynamic Mechanical ◽  
Bamboo Fibers

Abstract A novel method for the preparation of bamboo fibers (BF) has been investigated that includes crushing, rolling, and other combing techniques with 1,4-butanediol as a dispersant. The fibers were treated by oxygen plasma to improve their interfacial adhesion to unsaturated polyester (UPE) resins. Composites were prepared from the plasma treated fibers (BFtr) and UPE by hand lay-up compression molding. BFtr significantly increased the tensile strength, flexural strength, and flexural modulus of the resulting BF-UPE composites. Dynamic mechanical analysis indicated that the plasma treatment essentially increased the storage modulus and glass transition temperature of the composites. The damping parameter of the composites showed a decreasing trend in the glassy region, while the opposite was true for the rubbery region. X-ray diffraction analysis indicated that the treatment did not change the crystal structures within the fibers but increased slightly their crystallinity indices. X-ray photoelectron spectroscopy analysis revealed that the surface of BFtr had a higher oxygen concentration and oxygen/carbon ratio than that of BF. The scanning electron microscopy graphs of the tensile-fractured surface of the composites demonstrated an improved interfacial adhesion between BFtr and UPE resins.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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