Photoelectron spectroscopy on organic surfaces: X-ray degradation of oxygen-plasma-treated and chemically reduced poly(propylene) surfaces in comparison to conventional polymers

Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

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A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

MRS Proceedings ◽

10.1557/proc-565-217 ◽

1999 ◽

Vol 565 ◽

Author(s):

Kow-Ming Chang ◽

Ji-Yi Yang ◽

Yu-Hsun Chang

Keyword(s):

Photoelectron Spectroscopy ◽

Oxygen Plasma ◽

Thickness Variation ◽

Gap Filling ◽

Treatment Technology ◽

Cross Sectional ◽

X Ray ◽

Significant Damage ◽

Ion Treatment ◽

Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

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Oxygen Plasma Treatment of Fluorinated Polyimide: An X-Ray Photoelectron Spectroscopy Study

Metallized Plastics 3 ◽

10.1007/978-1-4615-3416-7_18 ◽

1992 ◽

pp. 215-223 ◽

Cited By ~ 1

Author(s):

Naresh C. Saha ◽

Li-Hsin Chang

Keyword(s):

Plasma Treatment ◽

Photoelectron Spectroscopy ◽

Oxygen Plasma ◽

Oxygen Plasma Treatment ◽

Spectroscopy Study ◽

X Ray ◽

Fluorinated Polyimide

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Improvement in the Activation Efficiency of Implanted Si in GaAs using Oxygen Plasma Pretreatment

MRS Proceedings ◽

10.1557/proc-259-311 ◽

1992 ◽

Vol 259 ◽

Author(s):

Jaeshin Cho ◽

Leszek M. Pawlowicz ◽

Naresh C. Saha

Keyword(s):

Photoelectron Spectroscopy ◽

Oxygen Plasma ◽

Chemical Vapor ◽

Gaas Surface ◽

Oxygen Plasma Treatment ◽

Surface Conditions ◽

X Ray ◽

Plasma Pretreatment ◽

Activation Efficiency ◽

Thick Oxide Layer

ABSTRACTWe have investigated the effect of GaAs surface conditions prior to plasma enhanced chemical vapor deposition of a silicon nitride cap on the activation efficiency of implanted Si in GaAs. The oxygen plasma treatment improved the activation efficiency of implanted Si by ∼35% over (1:10) NH4OH:H2O treatment. X-ray photoelectron spectroscopy (XPS) analysis of the oxygen plasma treated GaAs surface indicated the formation of ∼25Å thick oxide layer consisting of Ga2O3, As2O3, As2O5 and elemental As. During the activation anneal, the arsenic-containing oxides react with the GaAs substrate to form Ga2O3 and elemental As. The presence of excess As between the GaAs and the nitride cap film increases the probability that the implanted Si incorporates in the Ga sites over the As sites, and thereby improves the activation efficiency. This surface-related mechanism suggests that the variation in activation efficiency is mostly attributed to variation in surface conditions, and may explain the wide variety of reported values of activation efficiency.

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X‐ray photoelectron spectroscopy study of the surface chemistry of freon‐oxygen plasma etched silicon

Applied Physics Letters ◽

10.1063/1.94528 ◽

1983 ◽

Vol 43 (9) ◽

pp. 859-861 ◽

Cited By ~ 20

Author(s):

J. H. Thomas ◽

J‐S. Maa

Keyword(s):

Surface Chemistry ◽

Photoelectron Spectroscopy ◽

Oxygen Plasma ◽

Spectroscopy Study ◽

X Ray ◽

Etched Silicon

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Large Spin Hall Angle in β-W Thin Films Grown on CoFeB without Oxygen Plasma

SPIN ◽

10.1142/s2010324718500182 ◽

2018 ◽

Vol 08 (04) ◽

pp. 1850018 ◽

Cited By ~ 2

Author(s):

Rajni Bansal ◽

Gurudeo Nirala ◽

Akash Kumar ◽

Sujeet Chaudhary ◽

P. K. Muduli

Keyword(s):

Thin Films ◽

Growth Rate ◽

Photoelectron Spectroscopy ◽

Oxygen Plasma ◽

Growth Conditions ◽

X Ray ◽

Linear Behavior ◽

Hall Angle ◽

Hall Effect Measurements ◽

Large Spin

We report on growth optimization and magnetodynamic properties of [Formula: see text]-W/Co[Formula: see text]Fe[Formula: see text]B[Formula: see text] system. We show that a relatively low growth rate of [Formula: see text][Formula: see text]Å/s is essential for the stabilization of the [Formula: see text] phase of tungsten. The low growth rate allows for the residual oxygen present in the chamber to get incorporated into the growing film, which helps in the stabilization of [Formula: see text]-phase tungsten as evidenced by X-ray diffraction and X-ray photoelectron spectroscopy. Using these optimized growth conditions, we achieved the [Formula: see text] phase in tungsten thin films up to a thickness of 60[Formula: see text]nm. The ferromagnetic resonance measurements of [Formula: see text]-W/Co[Formula: see text]Fe[Formula: see text]B[Formula: see text] show a linear behavior of the Gilbert damping constant with the inverse of the thickness of the CoFeB layer, from which, we calculated spin mixing conductance to be [Formula: see text][Formula: see text]m[Formula: see text]. Using the inverse spin Hall effect measurements, we obtained a large spin Hall angle of [Formula: see text] in [Formula: see text]-W, which is achieved without using oxygen plasma during growth of tungsten.

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Experimental Study on the Laser Transmission Joining of Polystyrene and Titanium

Materials ◽

10.3390/ma11091513 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1513 ◽

Cited By ~ 3

Author(s):

Pin Li ◽

Jing Li ◽

Wensheng Tan ◽

Huixia Liu ◽

Xiao Wang

Keyword(s):

Failure Mode ◽

Photoelectron Spectroscopy ◽

Joint Strength ◽

Oxygen Plasma ◽

Titanium Surface ◽

Tensile Failure ◽

Oxygen Plasma Treatment ◽

Treatment Methods ◽

X Ray ◽

Joining Strength

To address the difficulty of joining polystyrene (PS) and titanium by laser transmission joining, two methods—laser treatment of the titanium surface and oxygen plasma treatment of the PS surface—are used to compare the laser transmission joint strengths of the different treatment methods. The results of the experiments find that joining with titanium can be achieved only when PS is treated with oxygen plasma. When the laser-treated surface of titanium is jointed to the oxygen plasma-treated PS, the joint strength is the highest, reaching 6.5 MPa. The joining mechanism of oxygen plasma-treated PS and laser oxidation-treated titanium was investigated by joint tensile failure mode, joint micromorphology observation, contact angle and surface free energy experiments, and X-ray photoelectron spectroscopy (XPS). The results show that the failure mode of the joint is an interfacial failure; the size and amount of bubbles play an important role in the joining strength, and the joints with fine and uniform bubbles have the highest joint strength. The two surface treatment methods can improve the surface energy of the joints, improve the compatibility between the two joining surfaces, and enhance the joint strength. Ti–C and Ti–O chemical bonds are formed at the joints, which are the main reason for the increase in joint strength.

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