A Complementary Wafer Cleaning and Growth Process for Low Temperature, Defect Free, Selective Silicon Epitaxy
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ABSTRACTLow temperature (<850°C) defect free selective silicon epitaxy has been achieved with a conventional barrel type reactor (base pressure -10−4 Torr) using complementary cleaning and growth processes: a wet multi-step oxidizing clean, and a novel non-steady state CVD growth process. With this combination of cleaning and growth processes, it is shown that the need for a high temperature (950-1000°C) insitu native oxide removal step, which may be incompatible with advanced VLSI process integration, is eliminated.
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2008 ◽
Vol 17
(7-10)
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pp. 1076-1079
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2007 ◽
Vol 556-557
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pp. 61-64
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2011 ◽
Vol 78
(2)
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pp. 165-174
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