A Complementary Wafer Cleaning and Growth Process for Low Temperature, Defect Free, Selective Silicon Epitaxy

1992 ◽  
Vol 259 ◽  
Author(s):  
Jon T. Fitch ◽  
Dean J. Denning
Keyword(s):  
Steady State ◽  
Low Temperature ◽  
Growth Process ◽  
Process Integration ◽  
Native Oxide ◽  
Growth Processes ◽  
Silicon Epitaxy ◽  
Wafer Cleaning ◽  
Cvd Growth ◽  
Oxide Removal

ABSTRACTLow temperature (<850°C) defect free selective silicon epitaxy has been achieved with a conventional barrel type reactor (base pressure -10−4 Torr) using complementary cleaning and growth processes: a wet multi-step oxidizing clean, and a novel non-steady state CVD growth process. With this combination of cleaning and growth processes, it is shown that the need for a high temperature (950-1000°C) insitu native oxide removal step, which may be incompatible with advanced VLSI process integration, is eliminated.

The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride.

1988 ◽  
Vol 131 ◽  
Author(s):  
Seong S. Choi ◽  
S. S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
Cadmium Telluride ◽  
Chemical Vapor ◽  
High Energy ◽  
Native Oxide ◽  
Strong Adhesion ◽  
Cdte Substrate ◽  
Oxide Removal ◽  
Cdte Surface

ABSTRACTWe have successfully deposited thin films of SiO2 on a cadmium telluride substrate at low temperature (Ts =100°C–300°C) by remote plasma enhanced chemical vapor deposition (Remote PECVD). The native oxide on the CdTe substrate has been removed, prior to deposition by either chemical etching in methanol and 1% bromine, or by dissolution in deionized water. After removal of the native oxide, the CdTe was inserted into a UHV-compatible deposition chamber and a He+ plasma treatment was performed prior to deposition of an SiO2 film. This treatment promotes strong adhesion between the deposited SiO2 film and the CdTe surface. We find that the initial oxide removal process does not influence SiO2 adhesion. The effect of the He+ plasma treatment on the CdTe surface has been studied by Auger electron spectroscopy(AES), and Reflection high energy electron diffraction (RHEED).

In Situ Wafer Cleaning Prior to Selective HemiSpherical Grain (HSG) Poly-Silicon Deposition Using RT-CVD

1998 ◽  
Vol 525 ◽  
Author(s):  
B. J. Brosilow ◽  
S. Levy ◽  
Y. E. Gilboa
Keyword(s):  
Silicon Surfaces ◽  
Ex Situ ◽  
Native Oxide ◽  
Poly Silicon ◽  
Wafer Cleaning ◽  
Cleaning Procedures ◽  
Temperature Window ◽  
Oxide Removal ◽  
Cell Capacitance

ABSTRACTHemispherical grained (HSG) polycrystalline-silicon surfaces are used in DRAM manufacturing to enhance cell capacitance by increasing the surface area of the capacitor electrodes. We study the formation of HSG poly-silicon in a Rapid Thermal CVD (RT-CVD) cluster tool with in-situ native oxide removal. Compared to conventional ex-situ wet cleaning procedures, use of the in-situ native oxide removal both decreases the process temperature at which HSG formation occurs and increases the width of the temperature window within which desirable HSG layers are formed.

scholarly journals A SIMPLE FIVE-STEP METHODOLOGY TO DETERMINE CONTROLLABILITY OF HEAT EXCHANGER NETWORKS USING STEADY-STATE INFORMATION

2011 ◽  
Author(s):  
Rodolfo Tellez ◽  
William Y. Svrcek ◽  
Brent R. Young
Keyword(s):  
Steady State ◽  
Heat Exchanger ◽  
Process Integration ◽  
Plant Design ◽  
State Information ◽  
Step Procedure ◽  
Heat Exchanger Networks ◽  
Propose Control Strategy ◽  
Optimum Heat ◽  
And Control

Process integration design methodologies have been developed and introduced to synthesise an optimum heat exchanger network (HEN) arrangement. However, controllability issues are often overlooked during the early stages of a plant design. In this paper we present a five-step procedure that involves the use of multivariable disturbance and control analyses based solely on steady-state information and with the purpose to assess process design developments and to propose control strategy alternatives appropriate and suitable for a HEN.

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

2007 ◽  
Vol 556-557 ◽  
pp. 61-64
Author(s):  
Y. Shishkin ◽  
Rachael L. Myers-Ward ◽  
Stephen E. Saddow ◽  
Alexander Galyukov ◽  
A.N. Vorob'ev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Process ◽  
Three Dimensional ◽  
Chemical Species ◽  
3D Modelling ◽  
Complete Model ◽  
Cvd Growth ◽  
Dimensional Simulation ◽  
Insight Into ◽  
Hot Zone

A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a previously developed simulation platform, which connects fluid dynamics and thermal temperature profiling with chemical species kinetics, a complete model of the reaction process in a low pressure hot-wall CVD reactor has been developed. Close agreement between the growth rate observed experimentally and simulated theoretically has been achieved. Such an approach should provide the researcher with sufficient insight into the expected growth rate in the reactor as well as any variations in growth across the hot zone.

Electron drift caused by rf field gradient creates many plasma phenomena: An attempt to distinguish the cause and the effect

2011 ◽  
Vol 78 (2) ◽  
pp. 165-174 ◽  
Author(s):  
C. L. XAPLANTERIS ◽  
E. D. FILIPPAKI ◽  
I. S. MISTAKIDIS ◽  
L. C. XAPLANTERIS
Keyword(s):  
Experimental Data ◽  
Steady State ◽  
Low Temperature ◽  
Mathematical Models ◽  
Field Gradient ◽  
Collision Frequency ◽  
The Other ◽  
Frequency Effect ◽  
Electron Drift ◽  
Plasma Parameters

AbstractMany experimental data along with their theoretical interpretations on the rf low-temperature cylindrical plasma have been issued until today. Our Laboratory has contributed to that research by publishing results and interpretative mathematical models. With the present paper, two issues are being examined; firstly, the estimation of electron drift caused by the rf field gradient, which is the initial reason for the plasma behaviour, and secondly, many new experimental results, especially the electron-neutral collision frequency effect on the other plasma parameters and quantities. Up till now, only the plasma steady state was taken into consideration when a theoretical elaboration was carried out, regardless of the cause and the effect. This indicates the plasma's complicated and chaotic configuration and the need to simplify the problem. In the present work, a classification about the causality of the phenomena is attempted; the rf field gradient electron drift is proved to be the initial cause.

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