Characterization of Pulsed Laser Deposited Zinc Oxide

1992 ◽  
Vol 276 ◽  
Author(s):  
N. J. Ianno ◽  
L. McConville ◽  
N. Shaikh
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Piezoelectric Response ◽  
Zno Films ◽  
Zinc Oxide Films ◽  
Substrate Temperatures ◽  
532 Nm ◽  
Deposited Films

ABSTRACTThe pulsed laser deposition of zinc oxide films (ZnO) has been studied as a function of laser wavelength, and substrate temperature. The deposited films were characterized by x-ray diffractometry, Auger electron spectroscopy, and scanning electron microscopy. Highly textured (002) ZnO films have been deposited at substrate temperatures of 300 C with laser wavelengths of 532 nm and 248 nm. However, the energy fluence of 248 nm radiation controls the degree of texturing, allowing highly textured films to be deposited at room temperature.Smart structures based on embedded, textured ZnO coated fibers, and wires exhibit excellent piezoelectric response to external stress.

Preparation of ZnO Nanoparticles by 1064/532nm Laser Ablation and Studying the Effect of the Ablation Wavelength

2021 ◽  
Vol 1021 ◽  
pp. 171-180
Author(s):  
Munaf S. Majeed ◽  
Rabea Q. Nafil ◽  
Marwa F. Abdul Jabbar ◽  
Kadhim H. Suffer
Keyword(s):  
Zinc Oxide ◽  
Laser Ablation ◽  
Pure Water ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ultra Pure Water ◽  
Hexagonal Shape ◽  
532 Nm ◽  
Laser Ablation Technique

We prepared Zinc oxide nanomaterial employing PLA (pulsed laser ablation) technique. A pure Zn target was immersed in ultra-pure water (UPW) and it was subjected to several pulses (1st. and 2nd. harmonic) of the pumping Nd: YAG laser. The influence of changing laser’s wavelength (1064, 532) nm on the characterization of the produced nanoparticles was studied. The results obtained from studying the structure, topography, and morphology of the product showed that the particles have a hexagonal shape. Also, changing the wavelength of the laser from 532nm to 1064nm leads to size reduction and density increasing of the nanoparticles.

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Surface textured zinc oxide films

1999 ◽  
Vol 14 (3) ◽  
pp. 1039-1045 ◽  
Author(s):  
P. M. Verghese ◽  
D. R. Clarke
Keyword(s):  
Zinc Oxide ◽  
Plasma Plume ◽  
Surface Texturing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Diffusive Flux ◽  
Surface Smoothing ◽  
Zinc Oxide Films ◽  
Nonequilibrium Growth

Both epitaxial and crystallographically fiber-textured ZnO films can exhibit a surface texturing (“cratered”) morphology when grown by pulsed laser deposition at temperatures in the range of 350–750 °C in a background pressure of oxygen. The surface texturing is a consequence of the nucleation of oriented c axis grains that grow geometrically and impinge laterally. It is concluded that the surface texturing is due to nonequilibrium growth, being the result of a competition between the arriving flux, diffusive flux along the surface, and, possibly, concurrent ion etching from the laser-ablated plasma plume. At higher temperatures, no surface texturing occurs, presumably because of concurrent grain growth and more rapid surface smoothing by diffusion.

Structure and Physical Properties of Undoped ZnO and Vanadium Doped ZnO Films Deposited by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2575-2577 ◽  
Author(s):  
Shubra Singh ◽  
M. S. Ramachandra Rao
Keyword(s):  
Pulsed Laser Deposition ◽  
Full Width Half Maximum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Excitonic Emission ◽  
Substrate Temperatures

Undoped ZnO films were deposited using pulsed laser deposition technique on Si and glass substrates in different O2 partial pressures (ranging from 10−5 mbar to 3 mbar) and substrate temperatures. When the substrate temperature is 500 °C and O2 partial pressure (pp) ∼ 3 mbar, randomly oriented ZnO hexagons were observed on glass substrate, whereas, dense ZnO hexagonal rod like structures (diameter ranging from 200–500 nm) were observed on Si substrate. The photoluminescence (PL) characterization of ZnO film grown on Si exhibited an intense defect free narrow excitonic emission in the UV region (Full width half maximum (FWHM) ∼ 11.26 nm) as compared to broad emission (FWHM ∼ 57.06 nm) from that grown on glass. The parent film emission was found to shift from UV to blue region on doping ZnO with Vanadium.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Oxide Films ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zinc Oxide Film ◽  
Incident Wavelength ◽  
Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

2008 ◽  
Vol 23 (12) ◽  
pp. 3269-3272 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Tsuyoshi Ohnishi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Films ◽  
Ion Scattering ◽  
Ceramic Target ◽  
Interfacial Phase ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Ion Scattering Spectroscopy ◽  
Doped Zno ◽  
Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

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