Formation of TiO2 Thin Films by Oxidation of TiN

1992 ◽  
Vol 282 ◽  
Author(s):  
J. K. Truman ◽  
P. H. Ballentine ◽  
E. Terzioglu ◽  
A. M. Kadin
Keyword(s):  
Thin Films ◽  
Relative Dielectric Constant ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Tio2 Thin Films ◽  
Si Substrates ◽  
Diffusion Limited ◽  
Device Processing ◽  
Tin Thin Films

ABSTRACTTiN thin films were deposited by reactive sputtering onto Si substrates. TiO2 films were formed by subsequent oxidation of the TiN films, using either conventional furnace heating or rapid thermalprocessing (RTP). The materials properties of the resulting films were characterized by x-ray diffraction and Rutherford backscattering, and indicate conversion of the TiN to fully-oxidized rutile TiO2 by a diffusion-limited process. Electrical measurements of the insulating properties of the TiO2 films indicated a relative dielectric constant greater than 100, although the leakage current was greater than optimum. A fully in-situ process for the fabrication of microcapacitors is proposed, which involves the sputter deposition of TiN, the formation of TiO2 by RTP, and the deposition of a top TiN counterelectrode. This can be carried out under conditions that are compatible with Si microelectronic device processing.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

2000 ◽  
Vol 15 (9) ◽  
pp. 1962-1971 ◽  
Author(s):  
R. E. Koritala ◽  
M. T. Lanagan ◽  
N. Chen ◽  
G. R. Bai ◽  
Y. Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Si Substrates ◽  
Antiferroelectric Phase

Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Laser Deposition of CdS Thin films on Various Substrates

1990 ◽  
Vol 201 ◽  
Author(s):  
L. Shi ◽  
Y. Hashishin ◽  
S. Y. Dong ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
Laser Deposition ◽  
Laser Evaporation ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Cds Thin Films ◽  
Cds Films

AbstractWe have deposited CdS thin films onto substrates such as glass, sapphire and high Tc YBCO superconducting films by Nd:YAG laser evaporation in a vacuum environment. X-ray diffraction, optical and electrical measurements were used to study the deposited CdS films. The films are highly oriented with c-axis perpendicular to the surface and are optically smooth. The effects of laser fluence, substrate temperature on the film quality will be discussed. Additionally, Indium doped CdS films were also grown on sapphire substrates by laser deposition. In-situ resistivity measurements were employed to study the film formation process during laser deposition. A simple model was given to explain the in-situ resistivity data. Finally, a deposition temperature window was found to produce good quality CdS/YBCO heterostructures. The superconducting transition temperature of the YBCO films was degraded to 68K from an original Tc of 85 K after CdS deposition. The degradation of the superconducting properties was found mainly due to the interactions in the interface region.

Real-time x-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates

2000 ◽  
Vol 15 (12) ◽  
pp. 2606-2611 ◽  
Author(s):  
Hsin-Yi Lee ◽  
K. S. Liang ◽  
Chih-Hao Lee ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Transition Layer ◽  
Growth Behavior ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Diffraction Patterns

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.

A Study of Switching Behavior in Pb(Zr,Ti) O3 Thin Films Using X-Ray Diffraction

1994 ◽  
Vol 361 ◽  
Author(s):  
Michael O. Eatough ◽  
Duane Dimos ◽  
Bruce A. Tuttle ◽  
William L. Warren ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Domain Switching ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Si Substrates ◽  
Intensity Changes

ABSTRACTPb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.

X-ray Diffraction Investigations of TiO2 Thin Films and Their Thermal Stability

2011 ◽  
Vol 1352 ◽  
Author(s):  
Radomír Kužel ◽  
Lea Nichtová ◽  
Zdeněk Matěj ◽  
Zdeněk Hubička ◽  
Josef Buršík
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Laboratory Measurements ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Sol Gel Films

ABSTRACTIn-situ laboratory measurements in X-ray diffraction (XRD) high-temperature chamber and detailed XRD measurements at room temperature were used for the study of the thickness, temperature and time dependences of crystallization of amorphous TiO2 thin films. The films deposited by magnetron sputtering, plasma jet sputtering and sol-gel method were analyzed. Tensile stresses were detected in the first two cases. They are generated during the crystallization and inhibit further crystallization that also depends on the film thickness. XRD indicated quite rapid growth of larger crystallites unlike the sol-gel films when the crystallites grow mainly by increasing of annealing temperature.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

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